Low frequency noise in Schottky barrier contacts of titanium nitride on n-type silicon

Abstract

The electrical characteristics and the low frequency noise of TiN x Schottky contacts on n-type Si(100) have been systematically measured. The TiN x thin films were deposited by reactive magnetron sputtering at room temperature. Based on a model of a parallel combination of an ideal diode of current I 1 and a generation-recombination diode of current I 2 , we have extracted the contribution of both diodes to the measured total current I . Treating the two components I 1 and I 2 as different noise generators, we have analysed the observed white noise at high frequencies and the 1/f excess current noise at lower frequencies. The white noise is explained by using a pure shot noise for the component I 1 , by applying Gupta's general theorem on noise in non-linear driven devices for the component I 2 and by considering an additional noise generator with a Nyquist-type intensity. The 1/f excess current noise S I is explained by a model based on fluctuations of the generation-recombination current I 2 only. Analysis of the S I versus I data allowed us to determine the interface state density.

High performance InGaZnO‐based Schottky diodes fabricated at room temperature

“…Such high quality Schottky contact with large barrier height (0.94 eV) and low n (1.2) at as deposited IGZO/Pt interface is also proved to be possible realized by J-V characteristics analysis [17]. As low frequency noise (LFN), especially flicker noise, can reveals the bulk and surface quality of semiconductors, by measuring the LFN current noise (S I ) and capacity-voltage characteristics, the interface trap density (D it ) and Hooge's constant (α H ) can be obtained as follows [17,24,25]: …”

Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

“…In the last few decades, the LFN properties of Schottky diodes have been widely discussed. 13,14,[31][32][33][34] However, to date, most of the models remain debatable and are difficult to validate experimentally. In general, the dominant LFN comes from two separate sources, namely, series resistance and space-charge.…”

“…32,33 The mobility and diffusivity fluctuation model was first proposed by Kleinpenning in 1979. 35 In the late 1980 s, Luo et al corrected Kleinpenning's model and developed a widely accepted theory to describe the thermal emission limited noise, 13 which is given by…”

“…4, which is in the same order of magnitude as the values obtained from Si Schottky diodes ($10 À9 ). [13][14][15][16] Due to the amorphous structure of IGZO, such a low a H indicates the origin of scattering should be different from the crystalline semiconductors. In conventional semiconductors such as Si and GaAs, the ionized impurity scattering causes the decrease in the mobility when increasing the impurity concentration.…”

“…8,9 Analysis of LFN can also be used to improve the device performance and provide substantial information on physical properties. So far, the LFN properties of Schottky diodes have only been studied on crystalline semiconductors like gallium arsenide, [10][11][12] silicon (Si), [13][14][15][16] silicon carbide, 17 zinc oxide 18 and conventional amorphous semiconductors like a-Si. 19 The results often exhibit 1/f noise power spectral density which is proportional to I n , where n varies from 1 to 2.…”