Low-frequency noise in nanomaterials and nanodevices

Mihaila, M.

doi:10.1109/smicnd.2001.967411

Cited by 4 publications

(8 citation statements)

References 43 publications

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“…he defines . Most researchers [1][2][3][4][5][6][7][8][9] agree with Machlup's interpretation. This interpretation, however, is inconsistent with above definitions of and .…”

Section: Declaration Of Conflicting Interestsmentioning

confidence: 72%

“…demonstrating that Machlup's noise spectrum is equal to the g-r shot noise of a single trap 5 . Applying Campbell's theorem [16,19] the mean of ( ) is obtained by…”

Section: The G-r Shot Noise Resulting From a Single Active Trapmentioning

confidence: 92%

“…The scaling down of device dimensions is accompanied by discrete switching of the device resistance, usually referred to as random telegraph signals (RTS). This phenomenon has been observed in different physical systems, such as Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), semiconductor nanowires, quantum dots, and others [1][2][3][4][5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

“…As for generation-recombination (g-r) noise, the spectrum of RTS noise also has a Lorentzian shape. It is an open question whether this similarity is only formal because a g-r noise signal is Gaussian, whereas a RTS is merely in an up-and-down state [5].…”

Section: Introductionmentioning

confidence: 99%

“…Machlup misses this identity because he defines g-r shot noise as a succession of g-r pulses with identical relaxation times (see Eq. (49)) 5. The power-spectral density of a (symmetrical) RTS was first derived by Rice[23]; it exhibits a Lorentzian shape.…”

mentioning

confidence: 99%

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The transition from generation–recombination noise in bulk semiconductors to discrete switching in small-area semiconductors

Grüneis

2021

Physica A: Statistical Mechanics and its Applications

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Scaling down the dimensions of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) evinces discrete switching usually referred to as random telegraph signal (RTS). Such RTSs are usually attributed to the capture and emission of charge carriers by a single active trap located in an oxide layer. Machlup calculated the noise spectrum caused by these charge carriers based on probabilistic arguments. In this paper, we derive Machlup's noise spectrum differently: the g-r noise is attributed to a random succession of elementary g-r pulses. This enables g-r bulk noise to be interpreted in terms of the numbers of traps. The transition from g-r bulk noise to discrete switching is found by reducing the number of traps to just one single active trap. The resulting g-r noise spectrum is shown to be equivalent to Machlup's noise spectrum. The probability of an overlap of succeeding g-r pulses is calculated. Such an overlap is attributed to occupation of an empty single trap by an electron transferred from a neighboring trap. We simulate a g-r pulse train and find a large variety of patterns similar to those observed in MOSFETs. Excluding overlapping g-r pulses, the up-and-down distribution of succeeding g-r pulses is estimated.

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“…he defines . Most researchers [1][2][3][4][5][6][7][8][9] agree with Machlup's interpretation. This interpretation, however, is inconsistent with above definitions of and .…”

Section: Declaration Of Conflicting Interestsmentioning

confidence: 72%

“…demonstrating that Machlup's noise spectrum is equal to the g-r shot noise of a single trap 5 . Applying Campbell's theorem [16,19] the mean of ( ) is obtained by…”

Section: The G-r Shot Noise Resulting From a Single Active Trapmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

See 3 more Smart Citations

The transition from generation–recombination noise in bulk semiconductors to discrete switching in small-area semiconductors

Grüneis

2021

Physica A: Statistical Mechanics and its Applications

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Low-frequency noise in downscaled silicon transistors: Trends, theory and practice

2022

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Monitoring Single-Molecule Reactivity on a Carbon Nanotube

et al. 2007

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Using point-functionalized carbon nanotube devices, we demonstrate continuous, multihour monitoring of a single carboxylate group interacting with its immediate environment. The conductance of the nanotube device directly transduces single-molecule attachments and detachments in the presence of the carboxylate-selective reagent 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide hydrochloride (EDC). Because only one carboxylate is present in the device, it can be studied through hundreds of reactions, providing the statistical accuracy to directly determine a 12 s lifetime of the carboxy-EDC complex. An additional instability of the complex is transduced in real time and observed to have a median lifetime of 2 ms. By determining a turnover time in good agreement with bulk measurements and simultaneously illuminating additional dynamics, these results demonstrate this platform's potential for complementing optical methods in single-molecule research.

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Low-frequency noise in nanomaterials and nanodevices

Cited by 4 publications

References 43 publications

The transition from generation–recombination noise in bulk semiconductors to discrete switching in small-area semiconductors

The transition from generation–recombination noise in bulk semiconductors to discrete switching in small-area semiconductors

Low-frequency noise in downscaled silicon transistors: Trends, theory and practice

Monitoring Single-Molecule Reactivity on a Carbon Nanotube

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