Low frequency noise in MOS field effect transistors

Electrical phenomena in amorphous oxide films

“…On the basis of such a filamentary model it is easy to see why the llfnoise should be minimized by activation of an oxide cathode : if there are more filaments present the statistical fluctuation in current will be reduced. Measurements of the noise in two oxide cathodes pressed together (Hannam 1956) showed a variation in mean square noise proportional to 12, as would be expected by analogy with the model of Flinn et al (1967). It does not seem possible at the present time to offer a simple interpretation of the size of the steps seen (Greene et al 1969) in the recovery of conductivity in a metal-oxide-metal device.…”

“…Below V, one has an interesting situation which may perhaps be regarded as a one-dimensional analogue of the model put forward by McWhorter (1956) and by Flinn et al (1967) to explain the noise behaviour in the conducting channel of MOS transistors. These authors consider that fluctuations in the number of charge carriers occur due to tunnelling out of the semiconductor into traps situated in the gate oxide layer, from which they are subsequently released.…”

Trapping of injection charges in emission centers of GaN:Eu red LED characterized with 1/f noise involved in forward current

“…If trapping is the rate-limiting process for FCP, the I F fluctuation should be characterized as a 1= f noise. [20][21][22][23] The noise power spectrum that can be obtained with the Fourier transform of the fluctuated I F is formulated by 1= f. In fact, the 1= f noise has been observed for other electronic devices with trapping centers. A well-known 1= f noise was found in the drain current of metal-oxide-semiconductor field effect transistors (MOSFET).…”

“…A well-known 1= f noise was found in the drain current of metal-oxide-semiconductor field effect transistors (MOSFET). [21][22][23] The charges flowing in the conduction channel of MOSFET are occasionally captured at trapping centers in the oxide layer on the channel, resulting in the 1= f noise.…”

On triangulations of the plane by pencils of conics

“…The MOS transistor has an even higher input resistance than the junction FET, but its low-frequency noise performance is inferior except for use with sources of very high impedance (2210 M a ) owing to the large amount of flicker noise in the channel. Flicker noise is associated with surfaces, and a lot of noise is therefore generated in the channel of the MOS transistor (Abowitz et al 1967, Flinn et al 1967. Although certain surface treatments that give lower surface state densities have been found to give lower noise, the junction FET is likely to remain the dominant low-noise amplifier.…”