Low-frequency noise in InAs films bonded on low-k flexible substrates

Abstract

We have systematically investigated low-frequency noise (LFN) in InAs films with several thicknesses (≃10-100 nm) bonded on low-k flexible substrates (InAs/FS), comparing with that in InAs films epitaxially grown on GaAs(001) substrates (InAs/GaAs). We obtain current LFN spectra exhibiting approximate 1/f characteristics and consequent effective Hooge parameters α depending on the thickness, where we find that α in the InAs/FS is larger than that in the InAs/GaAs. The behavior of α can be attributed to the fluctuation of the electron mobility dominated by surface/interface charge scattering and by thickness fluctuation scattering.

Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures

“…The LFN measurement system consists of a shielded chamber for probe station, a battery-driven low-noise preamplifier (LNA, Stanford SR570), a dynamic signal analyzer (Agilent 35670A), and an RC passive low-pass filter (LPF). For measuring LFN in the MIS-FETs, the source is grounded, the drain is applied with a DC bias voltage and a DC offset current by the battery-driven LNA, and the gate is connected to a parameter analyzer through the LPF with a cut-off frequency ∼ 0.05 Hz to eliminate the noise from the parameter analyzer [7,21,42]. The schematic of the LFN measurement setup is shown in figure 4.…”

An InAs/high-k/low-k structure: Electron transport and interface analysis

“…[14][15][16][17] Nomarski optical microscope images of the Hall-bar devices are shown in the bottom of Fig. 1, where the differential interference contrasts indicate same smooth surfaces for the InAs/high-k/low-k and the InAs/low-k.…”

“…1. Using a heterostructure, InAs device layer (500 nm thickness)/ AlAs sacrificial layer (4 nm thickness)/ InAs buffer layer (2500 nm thickness)/ GaAs(001), we carried out ELO, [14][15][16][17] separation of the InAs device layer attached to an adhesive sheet. The InAs device layer was transferred onto an intermediate support, a sapphire(0001) coated by resists, followed by removal of the adhesive sheet and InAs surface cleaning using phosphoric acid.…”

“…However, we found a serious problem of InAs/FS interface fluctuation affecting electron mobilities 15 and lowfrequency noise. 17 In addition, poor heat release capability due to a low thermal conductivity of PET, κ ∼ 0.3 W/m-K, is also problematic.…”

“…8,9 In particular, heterogeneous integration of InAs devices on foreign host substrates is quite important. [10][11][12][13] We previously fabricated and investigated an InAs/low-k structure, where high-quality InAs thin films are bonded on host low-dielectric-constant (low-k) flexible substrates (FS), [14][15][16][17] by using epitaxial liftoff (ELO) and van der Waals bonding (VWB) method. 18,19 The InAs/low-k (InAs/FS) exhibits high electron mobilities, where the FS with k ∼ 3, polyethylene terephthalate (PET) coated by bisaziderubber, has a merit for device applications because of a low parasitic capacitance.…”