Low frequency noise characterization of very large value resistors

Arnaboldi, C.; Bucci, C.; Cremonesi, O.; Fascilla, A.; Nucciotti, A.; Pavan, M.; Pessina, G.; Pirro, S.; Previtali, E.; Sisti, M.

doi:10.1109/nssmic.2001.1009671

Cited by 12 publications

(12 citation statements)

References 17 publications

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“…They also are located at room temperature, close to the preamplifier, and consist of metal films (Micro-Ohm) with a value of 30 GΩ each. Their manufacturing process and large value have been chosen in order to maintain as low as possible their thermal and low frequency noise contribution [45]. All the necessary settings for the front-end and the biasing system are programmed remotely via computer, in order to allow the optimization of the overall dynamic performance separately for each detector [42].…”

Section: Methodsmentioning

confidence: 99%

A calorimetric search on double beta decay of 130Te

et al. 2003

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We report on the final results of a series of experiments on double decay of 130 Te carried out with an array of twenty cryogenic detectors. The set-up is made with crystals of TeO 2 with a total mass of 6.8 kg, the largest operating one for a cryogenic experiment. Four crystals are made with isotopically enriched materials: two in 128 Te and two others in 130 Te . The remaining ones are made with natural tellurium, which contains 31.7 % and 33.8 % 128 Te and 130 Te , respectively. The array was run under a heavy shield in the Gran Sasso Underground Laboratory at a depth of about 3500 m.w.e. By recording the pulses of each detector in anticoincidence with the others a 90 % C.L. lower limit of 2.1 × 10 23 years has been obtained at the 90 % C.L. on the lifetime for neutrinoless double beta decay of 130 Te . In terms of effective neutrino mass this is the most restrictive limit in direct experiments, after those obtained with Ge diodes. Limits on other lepton violating decays of 130 Te and to the neutrinoless double beta decay of 128 Te to the ground state of 128 Xe are also reported and discussed. Possible evidence is presented for the two neutrino double beta decay of 130 Te . Some consequences of the present results in the interpretation of geochemical experiments are discussed.

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Section: Methodsmentioning

confidence: 99%

A calorimetric search on double beta decay of 130Te

et al. 2003

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“…Although the thermal noise of resistor R s is now introduced in, this noise is reduced by the same factor. Meanwhile, there is no 1/f noise in the resistor due to the large number of carriers [12]. The proposed folded cascode amplifier with source degeneration load consequently helps a lot to decrease 1/f noise and does not increase thermal noise.…”

Section: Low Noise Amplifier Topologymentioning

confidence: 99%

An ultra low noise readout integrated circuit for uncooled microbolometers

Jiang

Zhang

et al. 2009

Analog Integr Circ Sig Process

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A low noise readout architecture for uncooled microbolometer focal plane arrays is described. The on-chip readout circuit contains an integration circuit in which the bolometer current is directed injected into a capacitor, and exhibits extremely low noise with no decrease in signal by using an ultra low noise capacitive transimpedance amplifier (CTIA). The simple configuration of the integration circuit makes it possible to operate more circuits in parallel, and increases the integration time and number of pixels. A 40 9 30 uncooled microbolometer focal plane array based on the low noise ROIC was implemented on silicon using a 0.5 lm CMOS technology. The total output noise voltage is 260 lV RMS. A noise at this level is so low that can loosen required TCR in the bolometer material. Experimental values of voltage responsivities of 3.98 9 10 5 V/W on average at 1 Hz modulation frequency have been achieved.

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“…To achieve low input referred noise, W has to be set in a very large value [5], resulting in large area.…”

Section: Circuit Designmentioning

confidence: 99%

A low noise compact class AB buffer amplifier with accurate quiescent current control

Zhou

Zhang

et al. 2010

Analog Integr Circ Sig Process

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The authors present a new low-noise class AB buffer amplifier. The proposed buffer amplifier achieves a low noise with fast settling time and low power consumption. The buffer amplifier circuit attains an input referred noise voltage of 12.8 nV= ffiffiffiffiffiffi Hz p , a DC gain of 108 dB, a unit-gain frequency of 8 MHz, and rising slew rate of 36 V/ls, as the load capacitance equals 150 pF. The circuit is power efficient when driving large capacitive loads and is well suited for low noise low power analog video buffer applications.

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Low frequency noise characterization of very large value resistors

Abstract: Several typo have been found. In Table 1 there are 2 our transcription errors. The unit of the term "beta" is p/GOhm. In the last column the value of the first cell should be 140.6 instead of 133.5, while the second cell 127.6 instead of 112.

Cited by 12 publications

References 17 publications

A calorimetric search on double beta decay of 130Te

A calorimetric search on double beta decay of 130Te

An ultra low noise readout integrated circuit for uncooled microbolometers

A low noise compact class AB buffer amplifier with accurate quiescent current control

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