Low-frequency noise characteristics of lattice-matched (x=0.53) and strained (x&amp;lt;0.53) In/sub 0.52/Al/sub 0.48/As/InxGa/sub 1-/xAs HEMT's

Ng, G. I.; Pavlidis, D.; Tutt, M.; Weiss, Roy; Marsh, P.F.

doi:10.1109/16.123473

Cited by 35 publications

(7 citation statements)

References 20 publications

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“…That is the reason why the low frequency noise in InGaAs-based MODFETs has been extensively studied. [6][7][8][9][10][11][12][13][14] Nevertheless, the understanding of the noise mechanisms is incomplete.…”

Section: Introductionmentioning

confidence: 99%

“…Both 1 / f and generation-recombination ͑GR͒ noise [12][13][14] were observed in InGaAs-based MODFETs. Measurements of the temperature dependence of the GR noise allowed finding the activation energy of traps responsible for the GR noise.…”

Section: Introductionmentioning

confidence: 99%

“…Measurements of the temperature dependence of the GR noise allowed finding the activation energy of traps responsible for the GR noise. 11,12 Gate leakage current was found to contribute to the output low frequency drain current noise in some cases. 10 In certain devices, the gate voltage dependence of the 1 / f noise is well described by the model suggested in Ref.…”

Section: Introductionmentioning

confidence: 99%

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Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

Levinshteǐn¹,

Rumyantsev²,

Tauk³

et al. 2007

Journal of Applied Physics

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We report on the low frequency ͓1/ f and generation-recombination ͑GR͔͒ noise in InAlAs/InGaAs modulation doped field effect transistors with a 50-nm gate length. The characteristic capture and emission times of the GR noise depended on the gate voltage. Measurements of the noise as a function of the gate voltage showed that the gate leakage current, contacts, and ungated sections of the channel did not contribute to the 1 / f noise. The gate voltage dependence of the 1 / f noise agreed well with the model of number of carriers fluctuations as a source of the 1 / f noise. An effective density of traps responsible for the 1 / f noise was found to be D eff Ϸ 2.7ϫ 10 12 cm −2 eV −1 .

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

Levinshteǐn¹,

Rumyantsev²,

Tauk³

et al. 2007

Journal of Applied Physics

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“…Such a high frequency is required to ensure testing outside the l/f noise region which for MODFET's is known t o extend well up t o several hundred MHz [8].…”

Section: Noise Characterization Approachmentioning

confidence: 99%

Characterization of MESFET and MODFET microwave noise properties utilizing drain noise current

Tutt

Menozzi

Pavlidis

1993 IEEE MTT-S International Microwave Symposium Digest

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The microwave drain noise characteristics have been studied for conventional long gate (1.0 pm and 0.5 pm) GaAs MESFET's and short ( X 0.15 pm) strained InGaAs/InAlAs/ InP MODFET's. Although the MODFET's have lower noise figures (Fm;,, w 0.4dB at 10GHz) than the MESFET's (1.5dB at lOGHz), their measured drain noise currents are greater indicating that F,;, does not describe the true device noise characteristics. Due to higher gain, estimated parastic contribution to the device noise is greater for the MODFET's than the MESFET's. The intrinsic channel noise has been modelled with an effective temperature associated with r d s , showing that carrier heating alone cannot explain the measured characteristics.

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“…The LFN can be converted into the high-frequency range, resulting in undesired phase and frequency modulation. This has motivated investigations of LFN in GaAs/AlGaAs MODFET's [ 1,2] and to a lesser extend in InAIAshGaAs MODFET's [3,4]. These studies have in common that the origin of the noise sources is not clearly established.…”

mentioning

confidence: 99%

Low frequency noise sources in InAlAs/InGaAs MODFET's

Rojo-Romeo

Viktorovitch

Leclercq

et al.

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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Low-frequency noise (LFN) in III-V MODFET's is an important limitation of the device performances for applications such as nonlinear circuits that have noise upconversion. The LFN can be converted into the high-frequency range, resulting in undesired phase and frequency modulation. This has motivated investigations of LFN in GaAs/AlGaAs MODFET's [ 1,2] and to a lesser extend in InAIAshGaAs MODFET's [3,4]. These studies have in common that the origin of the noise sources is not clearly established. As a matter of fact, the LFN of a completed MODFET device is the result and the interplay of various noise sources whose each contribution can hardly be solely determined. Yet, a non ambiguous identification of the noise sources is highly desired if the optimization of the technological process is oriented toward the reduction of the LFN. In this work, we present a study of various LFN sources in InAlAshGaAs MODFET structures. The contributions of the main noise sources -drain and source contact resistance fluctuations, channel charge fluctuations and gate current noise -are separated by measuring the drain current power noise spectrum on uncompleted, gate free MODFET structures of different channel lengths. A variety of MBE grown structures was investigated : 6-and uniformlydoped MODFET's; devices with lattice-matched and strained channel. Also experiments were performed on devices with different source and drain ohmic contacts. 2) Experimental.Noise power spectra were recorded at room temperature using an Advantest R92 1 1B power spectrum analyser. Gate and drain DC biases were applied to the samples using voltage sources supplied by low noise batteries. The drain current noise spectrum sid was derived from the noise voltage Sv measured across a load resistance RI, through the relation where & is the drain to source impedance. The gate was connected directly to the voltage source (AC grounded). Measurements were performed in linear regime, that is for small drain to source voltages (Vd. LFN spectra are l/f-like and do not show any dominant generation-recombination component in the range of frequencies investigated (1 Hz -100 kHz). Details on the MBE growth of MODFET structures are given elsewhere [5]. Unless otherwise specified, the AlInAs and InGaAs layers were grown at 5OOOC. 3) Gate free structures.Experiments were first carried out on gate-free structures with channel lengths ranging from 5 to 160 pn. The channel width is kept constant at 150 pm. In the following, we will consider successively the contributions of the draii and source contacts, the influences of the AlInAs barrier layer surface, of the AlInAs barrier doping mode and of the AlInAs buffer growth interface and, finally, the effect of strain in the channel layer. The role played by deep traps in the AlInAs layers w i l l then be discussed. 3.1)Contributions of the drain and source contacts. If Sich and Sicont hold for the noise current sources of the channel and of the contacts respectively, Sid is given by Sid = (\h/%34sich + (&~nt/Rds)~~icont.where ...

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Low-frequency noise characteristics of lattice-matched (x=0.53) and strained (x<0.53) In/sub 0.52/Al/sub 0.48/As/InxGa/sub 1-/xAs HEMT's

Cited by 35 publications

References 20 publications

Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

Characterization of MESFET and MODFET microwave noise properties utilizing drain noise current

Low frequency noise sources in InAlAs/InGaAs MODFET's

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