Low-frequency electronic noise in the double-gate single-layer graphene transistors

Liu, G.; Stillman, W.; Rumyantsev, Sergey; Shao, Qinghui; Shur, M. S.; Balandin, Alexander A.

doi:10.1063/1.3180707

Cited by 137 publications

(126 citation statements)

References 20 publications

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“…[25] Interestingly, environmental exposure and ageing of graphene devices also increase the level of noise, suggesting that a proper capping layer or surface functionalization may circumvent an increase of noise. [69] Indeed, by encapsulating a single layer graphene between two layers of hexagonal boron nitride (h-BN, as shown in Fig. 2c), the noise spectral density normalized to the channel area (blue dots, Fig.…”

Section: Electrical Noise Performances Of Graphene Materialsmentioning

confidence: 99%

Sensing at the Surface of Graphene Field‐Effect Transistors

et al. 2016

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Abstract. 10Recent research trends now offer new opportunities for developing the next generations of label-free biochemical sensors using graphene and other two-dimensional materials. While the physics of graphene transistors operated in electrolyte is well grounded, important chemical challenges still remain to be addressed, namely the impact of the chemical functionalizations of graphene on the key electrical parameters and the sensing performances. In fact, graphene -at least ideal graphene -is highly chemically inert. The 15 functionalizations and chemical alterations of the graphene surface -both covalently and non-covalently -are crucial steps that define the sensitivity of graphene. The presence, reactivity, adsorption of gas and ions, proteins, DNA, cells and tissues on graphene have been successfully monitored with graphene. This review aims to unify most of the work done so far on biochemical sensing at the surface of a (chemically functionalized) graphene field-effect transistor and the challenges that lie ahead. We are convinced that graphene biochemical sensors 20 hold great promises to meet the ever-increasing demand for sensitivity, especially looking at the recent progresses suggesting that the obstacle of Debye screening can be overcome.2

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Section: Electrical Noise Performances Of Graphene Materialsmentioning

confidence: 99%

Sensing at the Surface of Graphene Field‐Effect Transistors

et al. 2016

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“…The latter can improve the saturation velocity in graphene when it is limited by the surface electronphonon scattering [23]. The lower trap density achievable in diamond, compared to SiO 2 , indicates a possibility of reduction of the 1/f noise in graphene-on-diamond devices [24], which is essential for applications in r.f. transistors and interconnects.…”

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Graphene-on-Diamond Devices with Increased Current-Carrying Capacity: Carbon sp²-on-sp³ Technology

et al. 2012

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Graphene demonstrated potential for practical applications owing to its excellent electronic and thermal properties. Typical graphene field-effect transistors and interconnects built on conventional SiO 2 /Si substrates reveal the breakdown current density on the order of 1 μA/ nm 2 (i.e., 10 8 A/cm 2 ), which is ∼100× larger than the fundamental limit for the metals but still smaller than the maximum achieved in carbon nanotubes. We show that by replacing SiO 2 with synthetic diamond, one can substantially increase the current-carrying capacity of graphene to as high as ∼18 μA/nm 2 even at ambient conditions. Our results indicate that graphene's currentinduced breakdown is thermally activated. We also found that the current carrying capacity of graphene can be improved not only on the single-crystal diamond substrates but also on an inexpensive ultrananocrystalline diamond, which can be produced in a process compatible with a conventional Si technology. The latter was attributed to the decreased thermal resistance of the ultrananocrystalline diamond layer at elevated temperatures. The obtained results are important for graphene's applications in high-frequency transistors, interconnects, and transparent electrodes and can lead to the new planar sp 2 -on-sp 3 carbon-on-carbon technology.

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“…For example, α H for the single-wall carbon nanotubes was ≈0.01 in a supported condition [37] and 0.001 in a suspended condition. [38] A highly reduced α H of 0.001 was obtained in the exfoliated graphene, [39,40] while 0.006-0.011 in the CVD graphene; [32] and their representative values are included in Figure 4. Among the conventional III-V semiconductors, including the GaAs and the InSb used in the devices for light sensing, signal mixing, and amplification, α H of ≈0.002 is commonly observed.…”

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Controlled Low‐Frequency Electrical Noise of Monolayer MoS₂ with Ohmic Contact and Tunable Carrier Concentration

Wang

Liu

Chen

et al. 2017

Adv Elect Materials

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and unique band structures. [1] Semiconducting monolayers of the TMDs, such as MoS 2 and WSe 2 , possess a direct band gap and excellent photoresponsivity. [2,3] In addition, single-layer MoS 2 is moderately easy to attain Ohmic contact with various metals [4][5][6][7] and graphene, [8] and the singlelayer MoS 2 field-effect transistors (FETs) show decent performances on the mobility (tens of cm 2 V −1 s −1 ) [9,10] and the on-off current ratio (exceeding 10 8 ) [4,10] at room temperature, suggesting that the monolayer MoS 2 holds greater potential for flexible nanodevices and optoelectronic applications. The huge surface-to-volume ratio of the atomically thin TMDs makes their performances extremely sensitive to the surface and interface conditions. The low-frequency electrical noise of devices often discloses the influences from the surface [11] and the interface conditions and has been widely adopted as a nondestructive tool to study the interface conditions. The subthreshold slope of the FETs and the photo response time of the MoS 2 photodetectors are significantly determined by the interfacial traps. [12] Unlike the thermal noise and shot noise that possess a constant power spectral density, low-frequency noise typically has a 1/f spectrum, and its effect on the accuracy of a device cannot be reduced by increasing the averaging time. [13] Such noise manner causes a critical issue of applications of the TMDs in the signal sensing and processing, [14] and raises numerous interests in investigating the 1/f noise in the TMD-based devices for identifying its origin and for reducing its strength.The first study of low-frequency electrical noise in exfoliated monolayer MoS 2 [15] claimed that the noise has a 1/f spectrum and is mainly explained by fluctuation of the mobility. By contrast, the 1/f noise in the exfoliated MoTe 2[16] with the ambipolar transport behaviors and many other TMD FETs [17][18][19][20] is further described as fluctuation of the carrier density. Finding a clear picture of the possible factors contributing to the 1/f noise, including the external adsorbates on the devices, [15] the defect states at the metal/TMD contacts, [17] and the trappingdetrapping centers in the substrate near the TMD channel, [18,21] remains a challenging issue because of the lack of Ohmic contacts, ideal material quality, and an effective control of the carrier density. Recently, the high-quality chemical-vapor-deposited (CVD) MoS 2 monolayers show the comparable electrical

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Low-frequency electronic noise in the double-gate single-layer graphene transistors

Cited by 137 publications

References 20 publications

Sensing at the Surface of Graphene Field‐Effect Transistors

Sensing at the Surface of Graphene Field‐Effect Transistors

Graphene-on-Diamond Devices with Increased Current-Carrying Capacity: Carbon sp²-on-sp³ Technology

Controlled Low‐Frequency Electrical Noise of Monolayer MoS₂ with Ohmic Contact and Tunable Carrier Concentration

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Low-frequency electronic noise in the double-gate single-layer graphene transistors

Cited by 137 publications

References 20 publications

Sensing at the Surface of Graphene Field‐Effect Transistors

Sensing at the Surface of Graphene Field‐Effect Transistors

Graphene-on-Diamond Devices with Increased Current-Carrying Capacity: Carbon sp2-on-sp3 Technology

Controlled Low‐Frequency Electrical Noise of Monolayer MoS2 with Ohmic Contact and Tunable Carrier Concentration

Contact Info

Product

Resources

About

Graphene-on-Diamond Devices with Increased Current-Carrying Capacity: Carbon sp²-on-sp³ Technology

Controlled Low‐Frequency Electrical Noise of Monolayer MoS₂ with Ohmic Contact and Tunable Carrier Concentration