Low-Frequency Acoustic Phonon Temperature Distribution in Electrically Biased Graphene

Jo, Insun; Hsu, I-Kai; Lee, Yong J.; Sadeghi, Mir Mohammad; Kim, Seyoung; Cronin, Stephen B.; Tutuc, Emanuel; Banerjee, Sanjay K.; Yao, Zhen; Shi, Li

doi:10.1021/nl102858c

Cited by 62 publications

(68 citation statements)

References 27 publications

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“…The temperature dependence of the Raman spectrum of graphene has been studied by several groups. 13,14,[19][20][21] Most of the studies were conducted on graphene samples on substrates. In those cases, the Raman spectrum may be affected by the strain induced by the difference in the thermal expansion coefficients of the substrate and graphene, in addition to the purely thermal effect.…”

Section: Resultsmentioning

confidence: 99%

Thermal conductivity of suspended pristine graphene measured by Raman spectroscopy

et al. 2011

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The thermal conductivity of suspended single-layer graphene was measured as a function of temperature using Raman scattering spectroscopy on clean samples prepared directly on a prepatterned substrate by mechanical exfoliation without chemical treatments. The temperature at the laser spot was monitored by the frequency of the Raman 2D band of the Raman scattering spectrum, and the thermal conductivity was deduced by analyzing heat diffusion equations assuming that the substrate is a heat sink at ambient temperature. The obtained thermal conductivity values range from ∼1800 Wm −1 K −1 near 325 K to ∼710 Wm −1 K −1 at 500 K.

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Section: Resultsmentioning

confidence: 99%

Thermal conductivity of suspended pristine graphene measured by Raman spectroscopy

et al. 2011

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“…In the case of graphene, channel hotspots from Joule heating can exceed 300°C (ref. 71), which results in plastic substrate deformation and irreversible device damage 58 (Fig. 6a).…”

Section: Bendable Challengesmentioning

confidence: 99%

Two-dimensional flexible nanoelectronics

2014

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represents the tenth anniversary of modern graphene research. Over this decade, graphene has proven to be attractive for thin-film transistors owing to its remarkable electronic, optical, mechanical and thermal properties. Even its major drawback-zero bandgap-has resulted in something positive: a resurgence of interest in two-dimensional semiconductors, such as dichalcogenides and buckled nanomaterials with sizeable bandgaps. With the discovery of hexagonal boron nitride as an ideal dielectric, the materials are now in place to advance integrated flexible nanoelectronics, which uniquely take advantage of the unmatched portfolio of properties of two-dimensional crystals, beyond the capability of conventional thin films for ubiquitous flexible systems.T wo-dimensional (2D) atomic sheets are atomically thin, layered crystalline solids with the defining characteristics of intralayer covalent bonding and interlayer van der Waals bonding 1-3 . The expanding portfolio of atomic sheets illustrated in Fig. 1a currently include the archetypical 2D crystal graphene 3-14 , transition metal dichalcogenides (TMDs) 1,2,15-21 , diatomic hexagonal boron nitride (h-BN) 3,[22][23][24][25] , and emerging monoatomic buckled crystals collectively termed Xenes, which include silicene 2,26,27 , germanene 2 and phosphorene [28][29][30][31] . These materials are considered 2D because they represent the thinnest unsupported crystalline solids that can be realized, possess no dangling surface bonds and show superior intralayer (versus interlayer) transport of fundamental excitations (charge, heat, spin and light). The portfolio is expected to grow as more elemental and compound sheets are uncovered.The outstanding properties of 2D crystals have generated immense interest for both conventional semiconductor technology and the nascent flexible nanotechnology because, amongst other considerations, these atomic sheets afford the ultimate thickness scalability desired in a variety of essential material categories, including semiconductors, insulators, transparent conductors and transducers 3,16,18 . In particular, flexible nanoelectronics stand to greatly benefit from the development of 2D crystals because their unmatched combination of device physics and device mechanics is accessible on soft polymeric or plastic substrates 17,18,32,33 , which can enable the long sought after large-area high-performance flexible devices that can be manufactured at economically viable scales. As a result, existing flexible technology is expected to be transformed from low-cost commodity applications, such as radio-frequency identification tags and sensors, to integrated nanosystems with electronic performance comparable to silicon devices, in addition to affording mechanical flexibility and manufacturing form-factor beyond the capability of conventional semiconductor technology 34 . Hence, a new era in integrated flexible technology founded on 2D crystals is emerging.

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“…Compared to the case of low electric fields, where the system is usually close to thermal equilibrium, physical effects at high electric fields are very different, as charge carriers driven out of equilibrium reach much higher energies, 20 which open more scattering channels and lead to significant power dissipation and accompanying thermal phenomena. [21][22][23] High electric fields can be achieved in high-performance or high-power analog transistors, which operate in the current saturation regime, typically at fields >1 V/μm. As the current saturation is an important metric which determines the transistor gain, a better understanding of velocity saturation and the role of the substrate is needed to advance the development of graphene-based electronics.…”

Section: Introductionmentioning

confidence: 99%

Theoretical analysis of high-field transport in graphene on a substrate

Serov

Ong

Fischetti

et al. 2014

Journal of Applied Physics

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We investigate transport in graphene supported on various dielectrics (SiO2, BN, Al2O3, HfO2) through a hydrodynamic model which includes self-heating and thermal coupling to the substrate, scattering with ionized impurities, graphene phonons and dynamically screened interfacial plasmonphonon (IPP) modes. We uncover that while low-field transport is largely determined by impurity scattering, high-field transport is defined by scattering with dielectric-induced IPP modes, and a smaller contribution of graphene intrinsic phonons. We also find that lattice heating can lead to negative differential drift velocity (with respect to the electric field), which can be controlled by changing the underlying dielectric thermal properties or thickness. Graphene on BN exhibits the largest highfield drift velocity, while graphene on HfO2 has the lowest one due to strong influence of IPP modes.

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Low-Frequency Acoustic Phonon Temperature Distribution in Electrically Biased Graphene

Cited by 62 publications

References 27 publications

Thermal conductivity of suspended pristine graphene measured by Raman spectroscopy

Thermal conductivity of suspended pristine graphene measured by Raman spectroscopy

Two-dimensional flexible nanoelectronics

Theoretical analysis of high-field transport in graphene on a substrate

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