Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

Isella, Giovanni; Chrastina, D.; Rössner, B.; Hackbarth, T.; Herzog, H.‐J.; König, U.; Känel, H. von

doi:10.1016/j.sse.2004.01.013

Cited by 141 publications

(69 citation statements)

References 28 publications

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“…Quantum confinement at the direct gap of the Ge quantum wells with SiGe barriers has been demonstrated in these structures, by the observation of a clear exciton peak attributed to first valence band heavy hole (HH) level and the first conduction band level (HH1-cΓ1) transition at room temperature [23,25]. The excitonic transitions have also been characterized in large optical spectrum ranges in Ge/SiGe QW grown on graded buffer [26,27] by Low Energy Plasma Enhanced Chemical Vapor Deposition (LEPECVD) [28] ( Figure 1B). A 13 µm thick graded buffer from Si to Si 0.1 Ge 0.9 is first grown at a rate of 5-10 nm/s.…”

Section: Direct Gap Related Optical Transitions In Ge/sige Qw: Growthmentioning

confidence: 99%

Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

Marris‐Morini¹,

Chaisakul²,

Rouifed³

et al. 2013

Nanophotonics

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Despite being an indirect bandgap material, germanium (Ge) recently appeared as a material of choice for low power consumption optical link on silicon. Thanks to a low energy difference between direct and indirect energy bandgap, optical transitions around the direct gap can be used to achieve strong electroabsorption or photodetection in a material already used in microelectronics circuits. However, many challenges have to be addressed such as the growth of germanium-rich structures on silicon or the modeling of these structures around both direct and indirect bandgaps. This paper will explore recent achievements in Ge/SiGe quantum wells structures. Quantum confined Stark effect has been studied for different quantum well designs and light polarization. Both absorption and phase variations have been characterized and will be reported. Carrier recombination processes is also an intense research topic, in order to evaluate the competition between direct and indirect band gap emission as a function of temperature. Main results and conclusion will be introduced. Finally, high performance photonic devices (modulator and photodetector) that have already been demonstrated will be presented. At the end the challenges faced by Ge/SiGe QW as a new photonic platform will be presented.

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Section: Direct Gap Related Optical Transitions In Ge/sige Qw: Growthmentioning

confidence: 99%

Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

Marris‐Morini¹,

Chaisakul²,

Rouifed³

et al. 2013

Nanophotonics

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“…1 µm Ge heterolayers were epitaxially grown by low-energy plasma-enhanced chemical vapour deposition (LEPECVD) [14,15] on a standard Si (001) wafer. The working principle of the LEPECVD reactor is reported in Fig.…”

Section: Germanium Film Growthmentioning

confidence: 99%

Fabrication of mid-infrared plasmonic antennas based on heavily doped germanium thin films

et al. 2016

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Fabrication of mid-infrared plasmonic antennas based on heavily doped germanium thin films, Thin Solid Films (2015Films ( ), doi: 10.1016Films ( /j.tsf.2015 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. ) germanium was used to fabricate dipole antennas of 800 nm width with a gap spacing of 300 nm which demonstrate resonance frequencies around 13 µm and 13.5 µm for 2 µm and 3 µm long structures, respectively. This technology has the potential to be used for midinfrared sensing applications of hazardous gases and liquids. A C C E P T E D M A N U S C R I P T ACCEPTED MANUSCRIPT

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“…20,21 In an LEPECVD reactor, as sketched in Fig. 1(a), the wafer is exposed to a high intensity plasma, leading to growth rates of several nanometers per second through a very efficient decomposition of the reactive molecules.…”

Section: Materials Growth and Characterizationmentioning

confidence: 99%

Group-IV midinfrared plasmonics

et al. 2015

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Abstract. The use of heavily doped semiconductors to achieve plasma frequencies in the mid-IR has been recently proposed as a promising way to obtain high-quality and tunable plasmonic materials. We introduce a plasmonic platform based on epitaxial n-type Ge grown on standard Si wafers by means of low-energy plasma-enhanced chemical vapor deposition. Due to the large carrier concentration achieved with P dopants and to the compatibility with the existing CMOS technology, SiGe plasmonics hold promises for mid-IR applications in optoelectronics, IR detection, sensing, and light harvesting. As a representative example, we show simulations of mid-IR plasmonic waveguides based on the experimentally retrieved dielectric constants of the grown materials. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

Cited by 141 publications

References 28 publications

Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

Fabrication of mid-infrared plasmonic antennas based on heavily doped germanium thin films

Group-IV midinfrared plasmonics

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