Low‐Energy Oxygen Plasma Injection of 2D Bi₂Se₃ Realizes Highly Controllable Resistive Random Access Memory

Abstract

Resistive random access memory (RRAM) based on ultrathin 2D materials is considered to be a very feasible solution for future data storage and neuromorphic computing technologies. However, controllability and stability are the problems that need to be solved for practical applications. Here, by introducing a damage-less ion implantation technology using ultralow-energy plasma, the transport mechanisms of space charge limited current and Schottky emission are successfully realized and controlled in RRAM based on 2D Bi 2 Se 3 nanosheets. The memristors exhibit stable resistive switching behavior with a high resistive switching ratio (>10 4 ), excellent cycling endurances (300 cycles), and great retention performance (>10 4 s). The reliability and controllability of Bi 2 Se 3 memory endowed by oxygen plasma injection demonstrate the great potential of this ultralow-energy ion implantation technology in the application of 2D RRAM.

2D Heterostructure of Bi2O2Se/Bi2SeOx Nanosheet for Resistive Random Access Memory

“…Then as you can see from Figure 3c,d, in this high voltage region, the slope of 1.85 and 2.24 (≈2) is fitted respectively, which corresponds to Child's law (I ∝ V 2 ). [37][38][39] Then in the higher voltage region, the fitted slopes of the curves both suddenly increase. Therefore, according to the change of the slope, the conduction mechanism of the HRS region can be considered as space charge limited conduction (SCLC) theory.…”

Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness

“…The two-measure peaks centered at positions (163.08, 158.06), (163.43, 158.36), and (162.67, 157.13) eV represents the two spin–orbit coupled 4f components i.e., (4f 5/2 , 4f 7/2 ), for samples S1, S2 and S3, respectively 20 , 29 – 31 . The ~ 5 eV binding energy difference in these two spin–orbit coupled peaks confirms the formation of Bi 2 Se 3 for all the samples 26 .…”

“…4 d–f. The single broad and highly asymmetric Se 3d peaks in all the samples are deconvoluted into two new peaks corresponding to Se 3d 3/2 and 3d 5/2 using Lorentzian-Gaussian fitted function and their peak positions are given in Table 2 26 , 29 – 31 . In samples S1 and S2, an additional broad peak was observed on the higher binding energy side of Se 3d 3/2 and 3d 5/2 peaks for the Se-Se bond 26 , 28 .…”

A High‐Speed Photodetector Fabricated with Tungsten‐Doped MoS2 by Ion Implantation

“…Now, the common transfer methods include dry and wet transfer. [9,20,52,53] We chose the deionized waterassisted transfer method to increase efficiency and reduce damage to the material. The optical image indicates that the as-grown W-doped MoS 2 that has been transferred onto the 300 nm SiO 2 /Si substrate by the deionized water-assisted transfer method (For more details, see Experimental Section) is in large size and well uniform (≈40 µm on average), as depicted in Figure 2a.…”