Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane

Abstract

Methylsilane-derived fragment ions obtained from a Bernas-type ion source were investigated using a low-energy mass-selected ion beam system. Based on mass-energy analyzer measurements, these ions were determined to be H+, H2+, H3+, CH3+, Si+, and SiCH5+. The SiCH5+ ions were selected and injected into a Si(111) substrate at 750 °C. The ion energy was 40 eV. This injection led to the formation of a silicon carbide film on the Si substrate. An analysis of this film indicates that this type of ion beam deposition method can efficiently form silicon carbide film.

Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane

“…In this paper, Si + and SiCH 5 + ion beams were obtained using methylsilane. Identification of ions produced from methylsilane have been already reported in our previous paper [ 39 ]. On the other hand, C + ion beams were produced using CO 2 .…”

Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

“…This study was carried out with an ion beam system (ULVAC) [ 34 ]. The ion source of the system was a Bernas-type source [ 35 ]. In this study, pure Ar gas or pure N 2 gas was used as a source gas for the Ar + or N + ion beam production.…”

Ion chemistry and ionic thin film deposition from HMDS‐photochemistry induced by VUV‐radiation from an atmospheric plasma

“…[ 9–12 ] Still, substrate temperatures for conventional CVD from HMDS need to be around $$1000^\circ {\rm{C}}$$ or higher, making this process unsuitable for film deposition, for example, on heat‐sensitive polymer surfaces. Therefore, several techniques for thin‐film deposition have been developed to overcome this challenge including hot‐wire CVD (HW‐CVD), [ 13 ] ion beam deposition [ 14–16 ] , and PE‐CVD at low pressures. [ 17–20 ]…”