2023
DOI: 10.1016/j.heliyon.2023.e19002
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Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane

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Cited by 3 publications
(3 citation statements)
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References 43 publications
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“…Recent developments in the crystal growth of ultrathin X x Y 1−x C films on different substrates have given excellent opportunities to many researchers to prepare novel C-based semiconducting alloys with the expected crystal structures and compositions [42][43][44][45][46]. For future device designs and their applications using zb X x Y 1−x C alloys, we have reported our comprehensive calculations and predicted their x-dependent phonon ω j ( → q ), g(ω), and thermodynamic Θ D (T), C V (T) traits by using a RIM GF methodology in the VCA (see Table 4 and employing the results of binary XC materials).…”
Section: Phonon and Thermodynamic Properties Of X X Y 1−x C Ternary A...mentioning
confidence: 99%
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“…Recent developments in the crystal growth of ultrathin X x Y 1−x C films on different substrates have given excellent opportunities to many researchers to prepare novel C-based semiconducting alloys with the expected crystal structures and compositions [42][43][44][45][46]. For future device designs and their applications using zb X x Y 1−x C alloys, we have reported our comprehensive calculations and predicted their x-dependent phonon ω j ( → q ), g(ω), and thermodynamic Θ D (T), C V (T) traits by using a RIM GF methodology in the VCA (see Table 4 and employing the results of binary XC materials).…”
Section: Phonon and Thermodynamic Properties Of X X Y 1−x C Ternary A...mentioning
confidence: 99%
“…At room temperature (RT), the C, Si, Ge, and α-Sn of diamond crystal structures are known to exhibit indirect band gap energies E g [≡5.47 eV, 1.12 eV, 0.66 eV and 0 eV]. Higher mismatch between the lattice constants, a o [≡C: 3.56 Å, Si: 5.43 Å, Ge: 5.66 Å, α-Sn: 6.49 Å] and low solubility of C has caused complications in the earlier designs of XC/Si MQWs and SLs [33][34][35][36][37][38][39][40][41][42][43][44][45]. However, the differences in their electronegativity now play a vital role in carefully optimizing parameters to achieve epitaxial growth of heterostructures apposite for diverse device applications.…”
Section: Introductionmentioning
confidence: 99%
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