Low Energy Ion Implantation / Deposition as a Film Synthesis and Bonding Tool

Abstract

We describe a novel means for the production of atomically-bonded thin films of a wide range of materials. The technique is a plasma and ion beam method involving synthesis of the desired surface film by plasma deposition and the simultaneous atomic mixing of the film into the substrate by low energy ion implantation from the surrounding plasma. Vacuum-arc-produced metal plasma is used for the metallic component of the film and gases can be added to form compound films. Multiple plasma generators can be used, and films of single metals, alloys, ceramics and multilayers can be formed. By repetitively pulse biasing the substrate during plasma deposition, the growing film is subjected to energetic ion bombardment, and direct and recoil ion implantation is induced. The depositing film is thereby atomically mixed to the substrate as it is formed. The films are atomically smooth, can be anywhere from a few monolayers to microns in thickness, and the interface or mixed transition zone can be tailored. Here we outline the basic plasma physics of the method and describe a number of novel surfaces which have been formed with excellent properties.

A review of plasma-assisted deposition methods for amorphous carbon thin and ultrathin films with a focus on the cathodic vacuum arc technique

“…Alternatively, when a high negative bias voltage (on the order of several kV) is applied to the substrate, the growing film is intensively bombarded by the highly energetic ions, with ion bombardment inducing both direct and recoil implantation. The repeated pulsed biasing of the substrate leads to the formation of an intermixing layer, yielding a film atomically bonded to the substrate [194]. The intermixing layer enhances the adhesion between the film and the substrate, which is critical to the film's functionality and longevity.…”

Cathodic arc deposition of copper oxide thin films

“…This leads to a film which is well intermixed to the substrate at the interface and therefore very adhesive. The method is called "metal plasma immersion ion implantation and deposition", it is described in detail elsewhere [9,10], and so are the plasma source and macroparticle filter [10,11]. …”