Synthesis of unattainable ion implantation profiles – ‘Pseudo-implantation'

Brown, I.G.; Anders, A.; Anders, S.; Castro, R.A.; Dickinson, M.R.; MacGül, R.A.; Wang, Z.

doi:10.1016/b978-0-444-82334-2.50120-9

Cited by 1 publication

(1 citation statement)

References 13 publications

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“…By phase-shifting plasma production and bias, it is possible to have times dominated by deposition (absence of bias, or low bias), and times dominated by ion implantation and surface atom removal (sputtering) [43]. By selecting desirable proportions of ion implantation (high voltage bias) and deposition (no or very low bias) one can arrive at elemental composition depth profiles that are unattainable by conventional ion implantation, a process that could be called "pseudo-implantation" [201].…”

Section: Biasingmentioning

confidence: 99%

A review comparing cathodic arcs and high power impulse magnetron sputtering (HiPIMS)

Anders

2014

Surface and Coatings Technology

222

109

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High power impulse magnetron sputtering (HiPIMS) has been in the center of attention over the last years as it is an emerging physical vapor deposition (PVD) technology that combines advantages of magnetron sputtering with various forms of energetic deposition of films such as ion plating and cathodic arc plasma deposition. It should not come at a surprise that many extension and variations of HiPIMS make use, intentionally or unintentionally, of previously discovered approaches to film processing such as substrate surface preparation by metal ion sputtering and phased biasing for film texture and stress control. Therefore, in this review, an overview is given on some historical developments and features of cathodic arc and HiPIMS plasmas, showing commonalities and differences. To limit the scope, emphasis is put on plasma properties, as opposed to surveying the vast literature on specific film materials and their properties.

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Section: Biasingmentioning

confidence: 99%