Low electric field periodic poling of thick stoichiometric lithium niobate

Grisard, Arnaud; Lallier, Éric; Polgár, K.; Péter, Á.

doi:10.1049/el:20000741

Cited by 72 publications

(42 citation statements)

References 4 publications

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“…The temperature gradients, and in some cases the impurity/dopant concentration gradient via the induced non-uniform electric field can supply potential differences sufficient for poling. By all means, the poling field required for domain reversal is much less in stoichiometric crystals than in the congruent ones, as shown by Grisard et al 40 and Gopalan et al…”

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confidence: 89%

Growth, defect structure, and THz application of stoichiometric lithium niobate

Lengyel

Péter

Kovács

et al. 2015

Applied Physics Reviews

104

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Owing to the extraordinary richness of its physical properties, congruent lithium niobate has attracted multidecade-long interest both for fundamental science and applications. The combination of ferro-, pyro-, and piezoelectric properties with large electro-optic, acousto-optic, and photoelastic coefficients as well as the strong photorefractive and photovoltaic effects offers a great potential for applications in modern optics. To provide powerful optical components in high energy laser applications, tailoring of key material parameters, especially stoichiometry, is required. This paper reviews the state of the art of growing large stoichiometric LiNbO 3 (sLN) crystals, in particular, the defect engineering of pure and doped sLN with emphasis on optical damage resistant (ODR) dopants (e.g., Mg, Zn, In, Sc, Hf, Zr, Sn). The discussion is focused on crystals grown by the high temperature top seeded solution growth (HTTSSG) technique using alkali oxide fluxing agents. Based on high-temperature phase equilibria studies of the Li 2 O-Nb 2 O 5 -X 2 O ternary systems (X ¼ Na, K, Rb, Cs), the impact of alkali homologue additives on the stoichiometry of the lithium niobate phase will be analyzed, together with a summary of the ultraviolet, infrared, and far-infrared absorption spectroscopic methods developed to characterize the composition of the crystals. It will be shown that using HTTSSG from K 2 O containing flux, crystals closest to the stoichiometric composition can be grown characterized by a UV-edge position of at about 302 nm and a single narrow hydroxyl band in the IR with a linewidth of less than 3 cm À1 at 300 K. The threshold concentrations for ODR dopants depend on crystal stoichiometry and the valence of the dopants; Raman spectra, hydroxyl vibration spectra, and Z-scan measurements prove to be useful to distinguish crystals below and above the photorefractive threshold. Crystals just above the threshold are preferred for most nonlinear optical applications apart holography and have the additional advantage to minimize the absorption even in the far-infrared (THz) range. The review also provides a discussion on the progress made in the characterization of non-stoichiometry related intrinsic and extrinsic defect structures in doped LN crystals, with emphasis on ODR-ion-doped and/or closely stoichiometric systems, based on both spectroscopic measurements and theoretical modelling, including the results of first principles quantum mechanical calculations on hydroxyl defects. It will also be shown that new perspective applications, e.g., the generation of high energy THz pulses with energies on the tens-of-mJ scale, are feasible with ODR-doped sLN crystals if optimal conditions, including the contact grating technique, are applied. V C 2015 AIP Publishing LLC.

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confidence: 89%

Growth, defect structure, and THz application of stoichiometric lithium niobate

Lengyel

Péter

Kovács

et al. 2015

Applied Physics Reviews

104

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“…However, these light induced optical effects in CLN can be minimized to a significant extent by operating the device at higher temperature (~180 °C) or by using defect controlled stoichiometric LN having lesser intrinsic defects and impurities [23]. When grown in the near-stoichiometric form (nSLN, Li/Nb ~ 1) the optical properties improve significantly (Table 1) as a result of the decrease in the defect concentration [30,[46][47][48][49][50][51][52]. So nSLN is a better choice for nonlinear frequency conversion, as well as photo-refractive and holographic data storage applications [53,54] in comparison to CLN.…”

Section: Effect Of Intrinsic Defect On Propertiesmentioning

confidence: 99%

“…The NbLi 5+ antisite defects in CLN act as pinning centers that inhibit the movement of the ferroelectric domain wall in the crystal [9]. Hence, CLN crystals exhibit a high ferroelectric switching field ~21 kV/mm ( Table 1) that limits its use for domain engineered devices [49,56]. As the defect concentration is reduced in nSLN the coercive field becomes less than 4 kV/mm [52,53].…”

Section: Effect Of Intrinsic Defect On Propertiesmentioning

confidence: 99%

“…As the defect concentration is reduced in nSLN the coercive field becomes less than 4 kV/mm [52,53]. Even a coercive field as low as 200 V/mm has been reported for nSLN crystal grown from K 2 O flux [49]. SLN crystals, therefore, offer favorable properties for the realization of periodically poled devices (PPLN) [54] and domain engineering [52,53] where an electric field has to be applied for poling the material.…”

Section: Effect Of Intrinsic Defect On Propertiesmentioning

confidence: 99%

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Control of Intrinsic Defects in Lithium Niobate Single Crystal for Optoelectronic Applications

et al. 2017

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A single crystal of lithium niobate is an important optoelectronic material. It can be grown from direct melt only in a lithium deficient non-stoichiometric form as its stoichiometric composition exhibits incongruent melting. As a result it contains a number of intrinsic point defects such as Li-vacancies, Nb antisites, oxygen vacancies, as well as different types of polarons and bipolarons. All these defects adversely influence its optical and ferroelectric properties and pose a deterrent to the effective use of this material. Hence, controlling the defects in lithium niobate has been an exciting topic of research and development over the years. In this article we discuss the different methods of controlling the intrinsic defects in lithium niobate and a comparison of the effect of these methods on the crystalline quality, stoichiometry, optical absorption in the UV-vis region, electronic band-gap, and refractive index.

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“…22 The values of the ferroelectric threshold field tend to decrease in a dramatic way as the Li/Nb ratio is approaching unit. [22][23][24] The lower threshold field in SLN facilitates the fabrication of the tailored domain structures.…”

Section: B Properties Of Stoichiometric Lithium Niobatementioning

confidence: 99%

Formation of dendrite domain structures in stoichiometric lithium niobate at elevated temperatures

Shur

Chezganov

Nebogatikov

et al. 2012

Journal of Applied Physics

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Light-induced superlow electric field for domain reversal in near-stoichiometric magnesium-doped lithium niobate J. Appl. Phys. 107, 063514 (2010) Formation of the dendrite-type self-organized domain structures during polarization reversal at elevated temperatures (above 230 C) has been revealed and studied in stoichiometric lithium niobate LiNbO 3 single crystals. Optical, confocal Raman, scanning electron, and piezoelectric force microscopy have been used for domain visualization. It has been shown experimentally that formation of the dendrite-like structures has been attributed to correlated nucleation caused by a field distribution in the vicinity of the charged domain walls. V C 2012 American Institute of Physics.

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Low electric field periodic poling of thick stoichiometric lithium niobate

Cited by 72 publications

References 4 publications

Growth, defect structure, and THz application of stoichiometric lithium niobate

Growth, defect structure, and THz application of stoichiometric lithium niobate

Control of Intrinsic Defects in Lithium Niobate Single Crystal for Optoelectronic Applications

Formation of dendrite domain structures in stoichiometric lithium niobate at elevated temperatures

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