Low-dose focused ion beam nanofabrication and characterization by atomic force microscopy

Huey, Bryan D.; Langford, R. M.

doi:10.1088/0957-4484/14/3/310

Cited by 43 publications

(30 citation statements)

References 15 publications

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“…The depth measurement shows that the samples swell at low dose implantation under iodine atmosphere, similar to swelling by direct gallium implantation. 30,31 However, we expect possible extra swelling due to the formation of adsorbed SiI x species on the sample surface. The overall etch depth after baking is significantly deeper, which also supports the fact that SiI x is desorbed from the silicon surface.…”

Section: E Higher Dosesmentioning

confidence: 99%

Iodine enhanced focused-ion-beam etching of silicon for photonic applications

Schrauwen

Thourhout

Baets

2007

Journal of Applied Physics

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Focused-ion-beam etching of silicon enables fast and versatile fabrication of micro-and nanophotonic devices. However, large optical losses due to crystal damage and ion implantation make the devices impractical when the optical mode is confined near the etched region. These losses are shown to be reduced by the local implantation and etching of silicon waveguides with iodine gas enhancement, followed by baking at 300°C. The excess optical loss in the silicon waveguides drops from 3500 to 1700 dB/cm when iodine gas is used, and is further reduced to 200 dB/cm after baking at 300°C. We present elemental and chemical surface analyses supporting that this is caused by the desorption of iodine from the silicon surface. Finally we present a model to extract the absorption coefficient from the measurements.

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Section: E Higher Dosesmentioning

confidence: 99%

Iodine enhanced focused-ion-beam etching of silicon for photonic applications

Schrauwen

Thourhout

Baets

2007

Journal of Applied Physics

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“…[20][21][22][23][24] One limitation of using nanoslits for this type of plasmonic enhancement in various applications is the difficulty of reliable fabrication at the sub-10-nm scale, which is below the resolution limit of most lithography systems, and over large wafer-scale areas. 25 Existing gap-fabrication methods, such as focused ion beam (FIB) milling, [26][27][28] electromigration, [29][30][31][32][33] mechanical break junctions, 34 or photo/electron/ ion beam lithographies, [26][27][28]35,36 have the limitation that they must create gaps serially. It is crucial to consider the time of fabrication for a large area of nanostructures or slits when considering scaling up of the technology for applications beyond pure basic research.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and analysis of metallic nanoslit structures: advancements in the nanomasking method

Bauman

Darweesh

Debu

et al. 2018

J. Micro/Nanolith. MEMS MOEMS

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, "Fabrication and analysis of metallic nanoslit structures: advancements in the nanomasking method," J. Micro/Nanolith. MEMS MOEMS 17(1), 013501 (2018), doi: 10.1117/1.JMM.17.1.013501. Abstract. This work advances the fabrication capabilities of a two-step lithography technique known as nanomasking for patterning metallic nanoslit (nanogap) structures with sub-10-nm resolution, below the limit of the lithography tools used during the process. Control over structure and slit geometry is a key component of the reported method, exhibiting the control of lithographic methods while adding the potential for mass-production scale patterning speed during the secondary step of the process. The unique process allows for fabrication of interesting geometric combinations such as dual-width gratings that are otherwise difficult to create with the nanoscale resolution required for applications, such as nanoscale optics (plasmonics) and electronics. The method is advanced by introducing a bimetallic fabrication design concept and by demonstrating blanket nanomasking. Here, the need for the secondary lithography step is eliminated improving the mass-production capabilities of the technique. Analysis of the gap width and edge roughness is reported, with the average slit width measured at 7.4 AE 2.2 nm. It was found that while no long-range correlation exists between the roughness of either gap edge, and there are ranges in the order of tens of nanometers over which the slit edge roughness is correlated or anticorrelated across the gap. This work helps quantify the nanomasking process, which aids in future fabrications and leads toward the development of more accurate computational models for the optical and electrical properties of fabricated devices. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 UnportedLicense. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…However in order to use FIB more effectively, it is required to investigate the effect of current along with the implantation dose in order to achieve controllable milling with nanometre precession. illustrating the surface topography of FIB exposed area by means of AFM measurements [13]. They found that by varying the implantation dose from 10 13 to 10 17 ions/cm 2 , either protruding from, or recessed into the surface occurs.…”

Section: Introductionmentioning

confidence: 99%

Effects of current on early stages of focused ion beam nano-machining

Sabouri¹,

Anthony²,

Prewett³

et al. 2015

Mater. Res. Express

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In this report we investigate the effects of focused ion beam (FIB) machining at low doses in the range of 10 15 ions/cm 2 to 10 16 ions/cm 2 for currents below 300 pA on Si(100) substrates. The effects of similar doses with currents in the range 10pA to 300 pA were compared. The topography of resulting structures has been characterized using atomic force microscope, while crystallinity of the Si was assessed by means of Raman spectroscopy. These machining parameters allow a controllable preparation of structures either protruding from, or recessed into, the surface with nanometre precision.2

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Low-dose focused ion beam nanofabrication and characterization by atomic force microscopy

Cited by 43 publications

References 15 publications

Iodine enhanced focused-ion-beam etching of silicon for photonic applications

Iodine enhanced focused-ion-beam etching of silicon for photonic applications

Fabrication and analysis of metallic nanoslit structures: advancements in the nanomasking method

Effects of current on early stages of focused ion beam nano-machining

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