Iodine enhanced focused-ion-beam etching of silicon for photonic applications

Schrauwen, Jonathan; Thourhout, Dries Van; Baets, Roel

doi:10.1063/1.2815664

Cited by 11 publications

(8 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The main reason for diminished optical performance of FIB milled structures is the local implantation of Ga + ions. TRIM (transport and range of ions in matter) calculations [13] and previous ion implantations studies in Si predict large number of implanted ions and amorphization of the Si layer [14][15][16]. Ga + ion is known to have a low solid solubility in Si and a low amorphization dose.…”

Section: Resultsmentioning

confidence: 99%

INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS

Ay¹

2018

Anadolu University Journal of Science and Technology-a Applied Sciences and Engineering

View full text Add to dashboard Cite

Use of focused ion beam (FIB) as a nanostructuring platform for fast prototype device development in the area of photonics has been attracting a considerable interest. In this study, we report a systematic investigation of focused ion beam (FIB) induced Ga + ion implantation in silicon on insulator (SOI) structures. The local implantation of Ga + ions during milling is studied for a wide range of ion doses, ranging from about 10 14 to 10 17 ions/cm 2 , using X-ray photoelectron spectroscopy (XPS). Ion implantation is realized on identically sized areas for each dose by varying the FIB parameters such as dwell time and loop number. It is found that the most of the Ga + is within the first 50 nm of Si. This suggests that it can be possible to potentially reduce optical losses caused by the ion implantation in any optical application. Methods such as thermal annealing and wet or dry chemical etching can result in removal of the 50 nm implanted layer of SOI, as a result removing the layer causing potentially high optical losses.

show abstract

Section: Resultsmentioning

confidence: 99%

INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS

Ay¹

2018

Anadolu University Journal of Science and Technology-a Applied Sciences and Engineering

View full text Add to dashboard Cite

show abstract

“…Therefore, we attempted to improve the shape of the hole profile by means of insulatorenhanced etching ͑IEE͒ 15,16 in which XeF 2 was used as an assistant gas during FIB etching. Therefore, we attempted to improve the shape of the hole profile by means of insulatorenhanced etching ͑IEE͒ 15,16 in which XeF 2 was used as an assistant gas during FIB etching.…”

Section: Discussionmentioning

confidence: 99%

Investigation of etching two-dimensional microhole lattice array on lithium niobate with focused ion beam for fabricating photonic crystals

Yan

Xue

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inPhotonic crystal structures with ultrahigh aspect ratio in lithium niobate fabricated by focused ion beam milling Fabrication of two-dimensional InP-based photonic crystals by chlorine based chemically assisted ion beam etching J.Lithium niobate ͑LN͒ is a widely used artificial optic-electronic crystal. A LN surface is an attractive substrate for the fabrication of photonic crystals ͑PhCs͒ in order to form useful optical devices. In this work, two-dimensional microhole lattice arrays with specified structure parameters were fabricated on a LN substrate by means of focused ion beam ͑FIB͒ etching. The physical and geometrical reasons for the formation of a nonideal hole shape and the depth limitation are analyzed. The authors have mainly discussed the effect of redeposition and presented equations of depth change tendency and change rate. The influence of the aberration in the hole shape on the PhC's transmission spectrum is also estimated. Insulator enhanced etching is implemented in order to get better quasicolumn holes, and it is partly effective. Their work shows that FIB is a simple way to etch a hole on LN, but it is still necessary to make technical improvements to the process in order to obtain a better hole shape for PhC applications.

show abstract

“…It should be mentioned that the Ga + ion beam employed here is not the ideal ion beam source for etching GaAs/AlGaAs materials, and measurements were therefore performed as a feasibility study, not for benchmarking performance. If a proper gas-assisted FIB milling [54] or He + ion beam technique was to be used, an even better device performance would be expected. But still, as seen from the SEM image (inset of Fig.…”

Section: A Materials and Methodsmentioning

confidence: 99%

“…However, due to the need for expensive masks and repeated processing, development of new devices is costly and time-consuming. It is therefore attractive to use prototyping technologies that enable rapid and flexible fabrication of nanophotonic components, ranging from micro-to nanometer scales [54]. Among these approaches, FIB is an interesting alternative as it allows photoresist-free and direct writing, which enables the post-fabrication of devices with a more complex topography such as ridge waveguides and laser facets.…”

Section: Introductionmentioning

confidence: 99%

“…Among these approaches, FIB is an interesting alternative as it allows photoresist-free and direct writing, which enables the post-fabrication of devices with a more complex topography such as ridge waveguides and laser facets. In addition, FIB technology has been widely used for photonics applications, including fabrication of grating couplers and various waveguides [54], [55].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Liao

Chen

Huo

et al. 2017

IEEE J. Select. Topics Quantum Electron.

View full text Add to dashboard Cite

In this paper, we report monolithically integrated III-V quantum dot (QD) light-emitting sources on silicon substrates for silicon photonics. We describe the first practical InAs/GaAs QD lasers monolithically grown on an offcut silicon (001) substrate due to the realization of high quality III-V epilayers on silicon with low defect density, indicating that the large material dissimilarity between III-Vs and silicon is no longer a fundamental barrier limiting monolithic growth of III-V lasers on Si substrates. Although the use of offcut silicon substrates overcomes the antiphase boundary (APB) problem, it has the disadvantage of not being readily compatible with standard microelectronics fabrication, where wafers with on-axis silicon (001) substrates are used. We therefore report, to the best of our knowledge, the first electrically pumped continuous-wave (c.w.) InAs/GaAs QD lasers fabricated on on-axis GaAs/Si (001) substrates without any intermediate buffer layers. Based on the achievements described above, we move on to report the first study of post-fabrication and prototyping of various Si-based light emitting sources by utilizing the focused ion beam (FIB) technique, with the intention of expediting the progress toward large-scale and low-cost photonic integrated circuits monolithically integrated on a silicon platform. We compare two Si-based QD lasers with as-cleaved and FIB-made facets, and prove that FIB is a powerful tool to fabricate integrated Manuscript lasers on silicon substrates. Using angled facet structures, which effectively reduce facet reflectivity, we demonstrate Si-based InAs/GaAs QD superluminescent light emitting diodes (SLDs) operating under c.w. conditions at room temperature for the first time. The work described represents significant advances towards the realization of a comprehensive silicon photonics technology.Index Terms-Molecular beam epitaxy, quantum dots, semiconductor lasers, silicon photonics, focused ion beam. College London, where he is currently a Professor of semiconductor photonics. His research interests include the nanometer-scale engineering of low-dimensional semiconductor structures (such as quantum dots, quantum wires, and quantum wells) by using molecular beam epitaxy and the development of novel optoelectronic devices including lasers, detectors, and modulators by developing novel device process techniques. He has co-authored more than 300 papers in the area of semiconductor materials and devices.

show abstract

Iodine enhanced focused-ion-beam etching of silicon for photonic applications

Cited by 11 publications

References 41 publications

INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS

INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS

Investigation of etching two-dimensional microhole lattice array on lithium niobate with focused ion beam for fabricating photonic crystals

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Contact Info

Product

Resources

About