Low density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths

Richter, Daniel; Hafenbrak, R.; Jöns, Klaus D.; Schulz, Wolfgang-Michael; Eichfelder, M.; Heldmaier, Matthias; Roßbach, R.; Jetter, Michael; Michler, Peter

doi:10.1088/0957-4484/21/12/125606

Cited by 12 publications

(13 citation statements)

References 23 publications

(33 reference statements)

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“…We find a median full width at half maximum (FWHM) linewidth of FW H M median = 137 µeV where the narrowest line has a linewidth of FW H M Min = (54 ± 4) µeV. These linewidths are higher than typically reported values of < 10 µeV for self organized InGaAs QDs [33][34][35]. The Gaussian profile which we observe for most of the emission lines suggests that the emission is broadened by spectral diffusion [36].…”

Section: Resultscontrasting

confidence: 42%

Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

et al. 2016

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Unsleber, S.; Deppisch, M.; Krammel, C.M.; Vo, Minh; Yerino, C.D.; Simmonds, P.G.; Lee, Minjoo Larry; Koenraad, P.M.; Schneider, C.; Höfling, S. Published in: Optics Express DOI:10.1364/OE.24.023198Published: 03/10/2016 Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Unsleber, S., Deppisch, M., Krammel, C. M., Vo, M., Yerino, C. D., Simmonds, P. G., ... Höfling, S. (2016). Bulk AlInAs on InP(111) as a novel material system for pure single photon emission. Optics Express, 24(20), 23198-23206. DOI: 10.1364/OE.24.023198 General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Abstract: In this letter, we report on quantum light emission from bulk AlInAs grown on InP(111) substrates. We observe indium rich clusters in the bulk Al 0.48 In 0.52 As (AlInAs), resulting in quantum dot-like energetic traps for charge carriers, which are confirmed via cross-sectional scanning tunnelling microscopy (XSTM) measurements and 6-band k·p simulations. We observe quantum dot (QD)-like emission signals, which appear as sharp lines in our photoluminescence spectra at near infrared wavelengths around 860 nm, and with linewidths as narrow as 50 µeV. We demonstrate the capability of this new material system to act as an emitter of pure single photons as we extract g (2) -values as low as g

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Section: Resultscontrasting

confidence: 42%

Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

et al. 2016

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“…Minimum FWHM of 40 µeV (resolution limit of the µ‐PL setup) for some QD emission lines are found. Such values are comparable to InGaAs QDs grown by MOVPE on planar GaAs(001) substrates 31. Further improvement can be expected as many growth parameters are yet unexplored to improve the emission linewidth.…”

Section: Optical Propertiesmentioning

confidence: 99%

Site‐controlled quantum dot growth on buried oxide stressor layers

Strittmatter

Holzbecher

Schliwa

et al. 2012

Physica Status Solidi (a)

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Site-controlled growth of quantum dots (QDs) for single photon emitters (SPEs) is achieved applying a buried stressor approach. Theoretical and experimental analysis shows that site-controlled QD growth on buried oxide stressor-layers benefits enormously from a defect-free growth interface. Laterally modulated strain fields at GaAs(001) growth surfaces are used to tailor surface morphologies at the centre of prescribed mesa structures for subsequent QD growth. Suitable morphologies for site-controlled QD growth such as nano-hillocks and nanoholes are identified. Site-controlled QD growth appears above the boundaries between the oxidised layer and the non-oxidised semiconductor layer. Through fine tuning of wetting layer thickness and growth interruption high selectivity for QD nucleation is achieved. Thus, growth of single QDs at the centre of a current-injection limiting aperture is demonstrated. Moreover, the QD growth on a defect-free surface yields high quality optical properties in terms of narrow emission linewidth and temporal stability with no discernible difference to QDs grown on planar substrates. The technological simplicity of the buried stressor approach and the inherent integration of a current aperture for efficient carrier injection into site-selected QDs enable mass production of SPEs on large substrate sizes.

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“…Quantum wires and dots for quantum cavity electrodynamics experiments, quantum information technologies and fundamental physics [ 2 , 3 ], quantum cascade lasers and polariton cavities [ 4 , 5 ] or confined nanostructures for probing transport effects in the quantum regime [6] can now be grown by MOVPE. In the last twenty years in fact a general progress of the reactor technologies, an enhancement of source material quality, together with a substantial development in metallorganic and hydride purification techniques, led to a noteworthy improvement of all MOVPE outputs [7].…”

Section: Introductionmentioning

confidence: 99%

AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

Dimastrodonato

Mereni

Young

et al. 2010

Journal of Crystal Growth

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We present in this work a simple Quantum Well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a MetalOrganic Vapour Phase Epitaxy system.Comparisons between two different commercially available purifiers are based on the analysis of low temperature photoluminescence emission spectra from thick QWs, grown on GaAs substrates misoriented slightly from (100). Neutral excitons emitted from these structures show extremely narrow linewidths, comparable to those which can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment, suggesting that purifications well below the 1ppb level are needed to achieve high quality quantum well growth.

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Low density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths

Cited by 12 publications

References 23 publications

Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

Site‐controlled quantum dot growth on buried oxide stressor layers

AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

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