Low-density arrays of ultra-small InAs nanostructures obtained by two-stage arsenic exposure during droplet epitaxy

Balakirev, S. V.; Kirichenko, D. V.; Chernenko, N. E.; Shandyba, N A; Eremenko, M. M.; Агеев, О. А.; Солодовник, М. С.

doi:10.1016/j.apsusc.2021.152023

Cited by 5 publications

(1 citation statement)

References 36 publications

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“…At the same time, this shortcoming is eliminated in the droplet epitaxy technology [14], where the formation of A 3 B 5 quantum dots is multi-stage with a number of phases: deposition of droplets of group III atoms, correction of shape and crystallization in a flow of group V molecules, as well as annealing of the obtained nanostructures. A selection of process parameters at each growth stage ensures control of nanostructures' shape, size and surface density in a wide range [7,15,16]. However, even in case of the said approach there is the still unsolved and topical problem of creation of quantum dot arrays in an InAs/GaAs system, which have ultra-low density (< 10 8 cm −2 ) and small structure sizes (< 30 nm) at the same time (such parameters are necessary for the making of nanoelectronics and nanophotonics devices on their basis) [17].…”

Section: Introductionmentioning

confidence: 99%

Study of the effect of ultra-low arsenic flux on the formation of In(As)/GaAs nanostructures by droplet epitaxy

Balakirev

Kirichenko

Chernenko

et al. 2022

Physics of the Solid State

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In this paper, we present the results of studying the influence of arsenic pressure in the range of ultra-low values (10-7-10-6 Pa) on the processes of modification of In/GaAs(001) droplets with various initial sizes obtained by droplet epitaxy. We experimentally demonstrate that exposure of droplets to the ultralow arsenic flux makes it possible to reduce the droplet size to subcritical sizes while maintaining the initially specified surface density. The exposure of droplet nanostructures in the arsenic flux can be accompanied only by a decrease in their size, which is more typical for droplets obtained at large amounts of indium deposited material. For droplets with a smaller initial size, the formation of rings along the perimeter of the initial droplets and holes inside the rings is typical along with the droplet reduction. We also reveal that the dependence of the relative volume of droplets subjected to diffusion decay in the arsenic flux becomes more significant with a decrease in their initial size. Keywords: droplet epitaxy, nanostructures, In(As)/GaAs, arsenic flux.

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Section: Introductionmentioning

confidence: 99%

Study of the effect of ultra-low arsenic flux on the formation of In(As)/GaAs nanostructures by droplet epitaxy

Balakirev

Kirichenko

Chernenko

et al. 2022

Physics of the Solid State

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Color Transparent Monitor using Si/SiO2Core-Shell Nanoparticles: Optimum Color Selection

Seyyedi

Rostami

2022

Opt Quant Electron

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In this paper, core-shell nanoparticles are used to provide a transparent high-quality display. To realize this idea, Si-SiO 2 core-shell nanoparticles have been used to achieve the most suitable nanoparticle composition for a transparent color display with high transparency and contrast. For color transparent monitor the superimposed QDs are used. There is a basic question for the realization of the proposed transparent monitor. What is the ratio of nanoparticles (ratio of three QDs) for three colors in the proposed monitor? In this paper, we are going to acknowledge this question. As it is clear, the scattering peaks for red, green, and blue are different because of the physics of the scattering that is wavelengthdependent. Thus, the optimum ratio for each color should be obtained. The numerical method of Finite-Difference Time-Domain is used to simulate and calculate the optical properties of the proposed transparent monitor. The effect of different combinations of nanoparticles to have the maximum dispersion at blue, green, and red wavelengths and the minimum absorption at other wavelengths has been investigated. Finally, the optimum ratio and arrangement of nanoparticles for all colors are reported and numerically evaluated.

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Impurity effect on the ground state binding energy of a fully coupled polaron in a double ring shaped quantum dot

Cai

Zhao

et al. 2022

Physica B: Condensed Matter

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Low-density arrays of ultra-small InAs nanostructures obtained by two-stage arsenic exposure during droplet epitaxy

Cited by 5 publications

References 36 publications

Study of the effect of ultra-low arsenic flux on the formation of In(As)/GaAs nanostructures by droplet epitaxy

Study of the effect of ultra-low arsenic flux on the formation of In(As)/GaAs nanostructures by droplet epitaxy

Color Transparent Monitor using Si/SiO2Core-Shell Nanoparticles: Optimum Color Selection

Impurity effect on the ground state binding energy of a fully coupled polaron in a double ring shaped quantum dot

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