Abstract:In this paper, we present the results of studying the influence of arsenic pressure in the range of ultra-low values (10-7-10-6 Pa) on the processes of modification of In/GaAs(001) droplets with various initial sizes obtained by droplet epitaxy. We experimentally demonstrate that exposure of droplets to the ultralow arsenic flux makes it possible to reduce the droplet size to subcritical sizes while maintaining the initially specified surface density. The exposure of droplet nanostructures in the arsenic flux … Show more
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