Low dc power high-gain bandwidth product InAlAs/InGaAs-InP HBT direct-coupled amplifiers

Kobayashi, K.W.; Tran, L.T.; Block, Thomas; Oki, A.K.; Streit, D.C.

doi:10.1109/gaas.1996.567829

Cited by 20 publications

(3 citation statements)

References 8 publications

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“…Recently, the multiple feedback technique has been proposed and used in the design of wideband amplifiers [1] to achieve wide bandwidth and impedance matching simultaneously. One kind of transimpedance amplifier that also utilizes the multiple feedback loops is the so-called Kukielka configuration [2], which has been implemented by the silicon bipolar [3], GaAs HBT [4], and InP HEMT processes [5] with excellent performance. Because of the advances in CMOS technology, it is now possible for CMOS circuits to be operated in the GHz range.…”

Section: Introductionmentioning

confidence: 99%

DC‐2.1 GHz CMOS multiple feedback transimpedance amplifiers with high dynamic range and linearity

Chiang

Chen

et al. 2002

Micro & Optical Tech Letters

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A CMOS wideband transimpedance amplifier with multiple‐resistive feedback loops is reported for first time. This amplifier was fabricated by the 0.35‐μm CMOS process. Multiple‐feedback technique was used to achieve terminal impedance matching and wide bandwidth. The experimental results showed that a transimpedance gain of 51.7 dBΩ and a 3‐dB bandwidth of 2.1 GHz were obtained. High input P1dB of −5 dBm and input IP3 of 1 dBm were also measured. The high dynamic range and high linearity achieved were attributed to the multiple feedback technique used. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 36: 60–61, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10670

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Section: Introductionmentioning

confidence: 99%

DC‐2.1 GHz CMOS multiple feedback transimpedance amplifiers with high dynamic range and linearity

Chiang

Chen

et al. 2002

Micro & Optical Tech Letters

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“…A fully self-aligned HBT process is used to produce 1 pm emitter-width HBTs. The HBTs also feature a base-mesa undercut profile that enables a 30-40% reduction in Cch capacitance, and results in improved device f, and f, , , as well as mm-wave circuit performance [6], [7]. The l-pm emitter width base-undercut HBTs used in the amplifier design of this work have peak f,'s and fmais of 80 GHz and 200 GHz (from unilateral gain), respectively.…”

Section: Inaiadingaas-inp Hbt Device Technologymentioning

confidence: 97%

A 44 GHz InP-based HBT double-balanced amplifier with novel current re-use biasing

Kobayashi¹,

Nishimoto²,

Tran³

et al.

1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192)

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Here we report on what is believed to be the first Q-band IP3 results of an InAlAsLnGaAs-InP based HBT MMIC linear amplifier. The 3-stage amplifier uniquely combines a "'double-balanced" design topology that incorporates a "current re-use" bias scheme. The amplifier MMIC achieves 15.4 dB of gain, 28.3 dBm of IP3, and a P,,, of 16.2 dBm at 44 GHz. The corresponding outputstage IP3/P, mtio is 5.3 which is the best reported for InP-HBTs at Q-band. The MMIC is a high complexity chip which integrates 15 HBTs and 18 Lange couplers in a 6.2x3.5 mm2 iaea, and is self-biased through 5V while consuming 108 mA. The "current re-use'' enables easier system integration while the "double-balanced" design produces wideband IP3, gain and return-loss performance. This work {demonstrates the promising linearity performance of InP-HBTs and its practical biasing capability which is attractive for Q-band receiver applications such as mm-wave digital radio. IntroductionHigh IP3 amplifiers are needed in mm-wave receiver systems such as Ka-and Q-band digital radio applications. Flor frequencies below 18 GHz, GaAs HBTs [ 13 as well as spiked and pulsed -doped MESFETs [2], [3] have demonstrated record circuit Linearity Figure of Merits (LFOM=IP3/Pd,) which are an order of magnitude better than conventional MESFET amplifiers. However for the mm-wave regime, little has been published on the circuit linearity merits of these technologies. One reason is that

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“…The base-collector capacitance c b c must be reduced by either ion implantation [ 5 ] or etching of the collector region under the base electrode [6]. Emitter size must be reduced since HBTs reach the high frequency performance at high Emitter current density (above 1 04A/cm2); however, little improvement are seen for emitter width below 1-2 ym due mainly to large c b c and high base resistance Using a dipole doping [8] or a low E, quaternary can reduce the barrier at the collector heterojunction.…”

Section: Improving Inp Hbts Performancementioning

confidence: 99%

Fabrication of InP heterostructure bipolar transistors for 40 Gb/s communication systems

Abid

ICM 2000. Proceedings of the 12th International Conference on Microelectronics. (IEEE Cat. No.00EX453)

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InP Heterostructure Bipolar Transistors (HBT) are known for their high speed and easy integration with optical devices. Its technology is in general still developing. High frequency InP HBTs were fabricated. Some device and layer structure design improvements for 40Gbit/s communications systems application will be suggested. The necessary conditions to manufacture it will be presented. Various collector structures are used to increase its breakdown voltage while maintaining its speed and gain.

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Low dc power high-gain bandwidth product InAlAs/InGaAs-InP HBT direct-coupled amplifiers

Cited by 20 publications

References 8 publications

DC‐2.1 GHz CMOS multiple feedback transimpedance amplifiers with high dynamic range and linearity

DC‐2.1 GHz CMOS multiple feedback transimpedance amplifiers with high dynamic range and linearity

A 44 GHz InP-based HBT double-balanced amplifier with novel current re-use biasing

Fabrication of InP heterostructure bipolar transistors for 40 Gb/s communication systems

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