GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996
DOI: 10.1109/gaas.1996.567829
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Low dc power high-gain bandwidth product InAlAs/InGaAs-InP HBT direct-coupled amplifiers

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Cited by 20 publications
(3 citation statements)
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“…Recently, the multiple feedback technique has been proposed and used in the design of wideband amplifiers [1] to achieve wide bandwidth and impedance matching simultaneously. One kind of transimpedance amplifier that also utilizes the multiple feedback loops is the so-called Kukielka configuration [2], which has been implemented by the silicon bipolar [3], GaAs HBT [4], and InP HEMT processes [5] with excellent performance. Because of the advances in CMOS technology, it is now possible for CMOS circuits to be operated in the GHz range.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, the multiple feedback technique has been proposed and used in the design of wideband amplifiers [1] to achieve wide bandwidth and impedance matching simultaneously. One kind of transimpedance amplifier that also utilizes the multiple feedback loops is the so-called Kukielka configuration [2], which has been implemented by the silicon bipolar [3], GaAs HBT [4], and InP HEMT processes [5] with excellent performance. Because of the advances in CMOS technology, it is now possible for CMOS circuits to be operated in the GHz range.…”
Section: Introductionmentioning
confidence: 99%
“…A fully self-aligned HBT process is used to produce 1 pm emitter-width HBTs. The HBTs also feature a base-mesa undercut profile that enables a 30-40% reduction in Cch capacitance, and results in improved device f, and f, , , as well as mm-wave circuit performance [6], [7]. The l-pm emitter width base-undercut HBTs used in the amplifier design of this work have peak f,'s and fmais of 80 GHz and 200 GHz (from unilateral gain), respectively.…”
Section: Inaiadingaas-inp Hbt Device Technologymentioning
confidence: 97%
“…The base-collector capacitance c b c must be reduced by either ion implantation [ 5 ] or etching of the collector region under the base electrode [6]. Emitter size must be reduced since HBTs reach the high frequency performance at high Emitter current density (above 1 04A/cm2); however, little improvement are seen for emitter width below 1-2 ym due mainly to large c b c and high base resistance Using a dipole doping [8] or a low E, quaternary can reduce the barrier at the collector heterojunction.…”
Section: Improving Inp Hbts Performancementioning
confidence: 99%