Fabrication of InP heterostructure bipolar transistors for 40 Gb/s communication systems

Abstract

InP Heterostructure Bipolar Transistors (HBT) are known for their high speed and easy integration with optical devices. Its technology is in general still developing. High frequency InP HBTs were fabricated. Some device and layer structure design improvements for 40Gbit/s communications systems application will be suggested. The necessary conditions to manufacture it will be presented. Various collector structures are used to increase its breakdown voltage while maintaining its speed and gain.