Low damage pre-doping on CVD graphene/Cu using a chlorine inductively coupled plasma

Pham, Phuong V.; Kim, Ki‐Hyun; Jeon, Min Hwan; Lee, Se Han; Kim, Kyong Nam; Yeom, Geun Young

doi:10.1016/j.carbon.2015.08.070

Cited by 51 publications

(51 citation statements)

References 47 publications

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“…The dry doping of graphene by low energy plasmas is an interesting, new, damage-free method [19][20][21][22][23][24]. The method could be applied to other plasma systems such as neutral beams or ion beams.…”

Section: Discussionmentioning

confidence: 99%

A Library of Doped-Graphene Images via Transmission Electron Microscopy

Pham

2018

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Much recent work has focused on improving the performance of graphene by various physical and chemical modification approaches. In particular, chemical doping of n-type and p-type dopants through substitutional and surface transfer strategies have been carried out with the aim of electronic and band-gap tuning. In this field, the visualization of (i) The intrinsic structure and morphology of graphene layers after doping by various chemical dopants, (ii) the formation of exotic and new chemical bonds at surface/interface between the graphene layers and the dopants is highly desirable. In this short review, recent advances in the study of doped-graphenes and of the n-type and p-type doping techniques through transmission electron microscopy (TEM) analysis and observation at the nanoscale will be addressed.

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Section: Discussionmentioning

confidence: 99%

A Library of Doped-Graphene Images via Transmission Electron Microscopy

Pham

2018

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“…From a different perspective, plasma doping is emerging as a promising option for layer‐by‐layer stacking of heterostructural hybrid materials by controlling the plasma species, plasma doping concentration, plasma power, and treatment time. This is accomplished without damage from ion bombardment or the formation of defects or disorders on the MoS 2 structure using low energy radical doping and has been applied successfully for graphene doping with plasma, by using cyclic trapped plasma doping . Moreover, the plasma‐assisted doping technique is a very easy scale‐up and mass‐production technique.…”

Section: Conclusion and Perspectives On Doped Mos2mentioning

confidence: 99%

Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects

2016

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Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS ) have recently attracted much attention due to their nonzero-gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS -based devices exhibit great potential for applications in optoelectronics and energy harvesting. Here, a comprehensive review of various doping strategies is presented, including wet doping and dry doping of atomically crystalline MoS thin layers, and the progress made so far for their doping-based prospective applications is also discussed. Finally, several significant research issues for the prospects of doped-MoS in industry, as a guide for 2D material community, are also provided.

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“…Monolayer graphene was grown on Cu via a CVD approach, as described in detail in a previous report. 29 To optimize the Cldoping effect, pre-doping (doping before wet transfer) on graphene/Cu, normal-doping (doping aer wet transfer), and a combination of pre-doping and normal-doping on the graphene/ substrate of PET and SiO 2 were carried out. Aer Cl pre-doping, graphene/Cu was coated with PMMA, Cu was etched using a FeCl 3 etchant over 45 min, and then transferred on PET and SiO 2 .…”

Section: Resultsmentioning

confidence: 99%

“…This requires a very low R s value for graphene with no degradation in transparency. Herein, we proposed a method based on an innovative inductively coupled plasma (ICP) system, which is of low energy and non-damaging 29 for Cl-doping in graphene with very low R s values, extremely high transparency, high thermal stability, and high mobility.…”

Section: Introductionmentioning

confidence: 99%