Low-cost, thin-film silicon for terrestial solar cells

Wallace, R.; Jagannathan, B.; Gu, Xin; Sridhar, N.; Etemadi, K.; Chung, D.D.L.; Anderson, Wayne A.; Coleman, J.

doi:10.1063/1.49381

Cited by 5 publications

(3 citation statements)

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“…They have the added advantage of localizing the energy density on the sample and cause less heat propagation. In a work by Wallace et al [29] pulsed laser technique was employed to induce crystallization in amorphous Si:H film. The Si:H film was deposited on a molybdenum (Mo) substrate by using a DC glow discharge at 300 °C.…”

Section: Recrystallization and Annealing Of Deposited Si Thin Filmsmentioning

confidence: 99%

Growth, characterization and theoretical optical properties of polycrystalline n-silicon thin films for oxide-silicon tandem cells

2021

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With the decline in fossil fuels, hydrogen-based alternatives provide a reliable and clean source for sustainable energy generation. In these endeavors, photochemical splitting for hydrogen production through tandem cells has been the source of much theoretical and experimental research in science. Much focus has been placed on interfacial band gap engineering as one of the most promising routes in the generation of hydrogen. This present work explores sputtering of n-silicon to form the active electrode in a n-Si | n-TiO 2 tandem cell and investigates the effect of variations in sputtering and post sputtering treatment parameters (rapid thermal annealing and long cycle annealing) for successful deposition of crystalline Silicon. The samples were successfully characterized via Raman Spectroscopy, x-ray Diffraction and Optical Transmission Spectroscopy to ascertain prevalent crystalline order and optical band gap, under different sputtering and post-sputtering conditions. Relevant conclusions to ascertain the best possible n-Si deposition parameters indicated the use of post-sputtering annealing to induce and enhance crystallinity but to be cautious as not to incur the loss of Si during the annealing process.

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Section: Recrystallization and Annealing Of Deposited Si Thin Filmsmentioning

confidence: 99%

Growth, characterization and theoretical optical properties of polycrystalline n-silicon thin films for oxide-silicon tandem cells

2021

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show abstract

“…Wallace et.al. [30] pulsed laser technique was employed to induce crystallization in amorphous Si:H film. The Si:H film was deposited on a molybdenum (Mo) substrate by using a DC glow discharge at 300P o P C. Annealing was carried out with a Nd: glass pulsed laser resulting in grain sizes more than 0.2 µm and a minority carrier diffusion length of 22 µm.…”

Section: Recrystallization and Annealing Of Deposited Si Thin Filmsmentioning

confidence: 99%

Growth and Characterization of Polycrystalline Silicon Thin Films for Photocatalytic Splitting of Water in Oxide-Si Tandem Cells

Ali¹,

Zahid²,

Hasan³

et al. 2020

Preprint

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With the decline in fossil fuels, hydrogen-based alternatives provide a reliable and clean source for sustainable energy generation. In these endeavors, photochemical splitting for hydrogen production through tandem cells has been the source of much theoretical and experimental research in science. Much focus has been placed on interfacial band gap engineering as one of the most promising routes in the generation of hydrogen.This present work explores sputtering of n-silicon to form the active electrode in a n-Si | n-TiO2 tandem cell and investigates the effect of variations in sputtering and post sputtering treatment parameters (rapid thermal annealing and long cycle annealing) for successful deposition of crystalline Silicon. The samples were successfully characterized via Raman Spectroscopy, X-ray Diffraction and Optical Transmission Spectroscopy to ascertain prevalent crystalline order and optical band gap, under different sputtering and post-sputtering conditions. Relevant conclusions were drawn to ascertain the best possible deposition parameters of n-Si for photocatalytic water splitting.

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“…Shi [512] described the growth of large-area oriented silicon crystallites grown from Sn-Al melts on patterned SiO 2 layers on silicon substrates [36,56]; Shi and Green [513] also developed a method for depositing large-grain, largearea (10 cm 2 ) continuous thin films of silicon on borosilicate glass from Sn-Al-Mg melts saturated with silicon. Wallace et al [187,188] deposited silicon films on oxide-coated molybdenum substrates from molten indium or tin layers saturated with silicon by a sputtering source. Periodic meltback and regrowth suppressed growth normal to the plane of the substrate and led to more uniformly sized grains with a (111) preferred orientation and smoother silicon films.…”

Section: Si Solution Growth On Nonsilicon Substrates For Solar Cellsmentioning

confidence: 99%

Liquid-Phase Epitaxy

Mauk

2015

Handbook of Crystal Growth

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Low-cost, thin-film silicon for terrestial solar cells

Cited by 5 publications

References 0 publications

Growth, characterization and theoretical optical properties of polycrystalline n-silicon thin films for oxide-silicon tandem cells

Growth, characterization and theoretical optical properties of polycrystalline n-silicon thin films for oxide-silicon tandem cells

Growth and Characterization of Polycrystalline Silicon Thin Films for Photocatalytic Splitting of Water in Oxide-Si Tandem Cells

Liquid-Phase Epitaxy

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