Low-Cost Plasmonic Platform for Photon-Emission Engineering of Two-Dimensional Semiconductors

Singh, Anuj Kumar; Mandal, Kishor Kumar; Gupta, Yashika; V.S., Abhay Anand; Eswaramoorthy, Lekshmi; Kumar, Brijesh; Kala, Abhinav; Dixit, Saurabh; Achanta, Venu Gopal; Kumar, Anshuman

doi:10.1103/physrevapplied.19.044012

Cited by 3 publications

(6 citation statements)

References 56 publications

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“…The exciton-trion spectral weight (70 and 30%) of sapphire-MoS 2 , Au–MoS 2 , and the AuND-MoS 2 hybrid structure remains the same and is consistent for the power range of 1–40 μW. Trion recombination pathways are mostly nonradiative. , If the exciton spectral weight dominates one over another system, it contributes to PL enhancement. The similar exciton spectral weight of MoS 2 in sapphire, Au film, and AuND array implies that exciton spectral weight does not play any significant role in the giant PL enhancement of the AuND-MoS 2 hybrid structure.…”

Section: Resultsmentioning

confidence: 78%

“…Spectral weight quantifies the exciton or trion contribution in PL emission. Spectral weight can be defined as 44,45 in eq 3…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…Trion recombination pathways are mostly nonradiative. 44,45 If the exciton spectral weight dominates one over another system, it contributes to PL enhancement. The similar exciton spectral weight of MoS 2 in sapphire, Au film, and AuND array implies that exciton spectral weight does not play any significant role in the giant PL enhancement of the AuND-MoS 2 hybrid structure.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…Spectral weight quantifies the exciton or trion contribution in PL emission. Spectral weight can be defined as , in eq I m / ( I normalE + I normalT ) where I is the intensity of PL emission, E represents exciton, and T represents trion. m can be T or E according to the trion or exciton spectral weight.…”

Section: Resultsmentioning

confidence: 99%

See 3 more Smart Citations

Novel Nano-Electroplating-Based Plasmonic Platform for Giant Emission Enhancement in Monolayer Semiconductors

Anand V S,

Sahoo,

Mujeeb

et al. 2023

ACS Appl. Mater. Interfaces

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Section: Resultsmentioning

confidence: 78%

“…Spectral weight quantifies the exciton or trion contribution in PL emission. Spectral weight can be defined as 44,45 in eq 3…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Novel Nano-Electroplating-Based Plasmonic Platform for Giant Emission Enhancement in Monolayer Semiconductors

Anand V S,

Sahoo,

Mujeeb

et al. 2023

ACS Appl. Mater. Interfaces

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“…Rapid advancement in integrated photonic circuitry platforms on an industry scale has prompted tremendous progress to meet the demands for photonic technology. In the past decade, the photonic community has made significant progress in the development of a conventional hybrid integration approach for solid-state emitters, such as III–V quantum dots (QDs), − color centers in diamond, 2D materials, − and hexagonal boron nitride (hBN), , to name a few on technologically mature photonics platforms. The hybrid photonic integration approach increases the complexity of the fabrication.…”

Section: Sin Materials Growthmentioning

confidence: 99%

Emission Engineering in Monolithically Integrated Silicon Nitride Microring Resonators

Mandal,

Singh,

Kumar

et al. 2024

ACS Materials Lett.

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Monolithic integration of solid-state emitters with photonic elements of the same material is a promising approach to overcome the constraints of fabrication complexity and coupling losses in traditional hybrid integration approaches. A wide band gap, low-loss silicon nitride (SiN) platform is a mature technology, having CMOS compatibility, widely used in hybrid integrated photonics and optoelectronics. However, it has been shown that certain growth conditions enable the SiN material to host color centers, whose origin is currently under investigation. In this work, we have engineered a novel technique for the efficient coupling of these intrinsic emitters into the whispering gallery modes (WGMs) of the SiN microring cavity, which has not been explored previously. We have engineered a subwavelength-sized notch into the rim of the SiN microring structure to optimize the collection efficiency of the cavity-coupled enhanced photoluminescence (PL) spectra at room temperature. The platform presented in this work will enable the development of the monolithic integration of color centers with nanophotonic elements for application to quantum photonic technologies.

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Engineering of excitonic emission and valley polarization enhancement in two-dimensional semiconductors

Singh,

Garg,

Kumar

et al. 2024

2D Photonic Materials and Devices VII

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Atomically thin two-dimensional transition metal dichalcogenides have garnered tremendous attention from researchers owing to their distinct electrical and optical properties. Improving the photoluminescence of these two-dimensional atomic semiconductors is imperative for their seamless integration into photonic and optoelectronic devices. Concurrently, the advent of two-dimensional materials such as graphene and transition metal dichalcogenides has ushered in opportunities within the realm of valleytronics. Valleytronics endeavors to exploit valley degrees of freedom for information processing, mirroring the principles of spin-based spintronics and charge-based electronics. Notably, these materials demonstrate a unique spin-valley locking mechanism, thereby enabling modulation of the electronic valley degree of freedom through light. In the present study, we fabricated cost-effective nanocone structures via colloidal lithography and subsequently integrated them with a monolayer of WSe 2 . Through this methodology, we amplified both the photoluminescence and valley polarization enhancement of the WSe 2 monolayer by harnessing plasmonic hotspots.

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Low-Cost Plasmonic Platform for Photon-Emission Engineering of Two-Dimensional Semiconductors

Cited by 3 publications

References 56 publications

Novel Nano-Electroplating-Based Plasmonic Platform for Giant Emission Enhancement in Monolayer Semiconductors

Novel Nano-Electroplating-Based Plasmonic Platform for Giant Emission Enhancement in Monolayer Semiconductors

Emission Engineering in Monolithically Integrated Silicon Nitride Microring Resonators

Engineering of excitonic emission and valley polarization enhancement in two-dimensional semiconductors

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