Low-Cost Planar RF MEMS-Based Attenuator

Raeesi, Amir; Al‐Saedi, Hussam; Palizban, Ardeshir; Taeb, Aidin; Abdel‐Wahab, Wael M.; Gigoyan, Suren; Safavi‐Naeini, Safieddin

doi:10.1109/mwsym.2019.8701108

Cited by 11 publications

(9 citation statements)

References 7 publications

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“…The first proposals of analog attenuators came only during the last couple of years. In [98], Authors present a design based on CPW meandered configuration. A membrane with lowresistivity silicon slab is deployed over the signal line, with a highly magnetized permanent magnet on the upper side facing an overhead planar spiral coil.…”

Section: Attenuatorsmentioning

confidence: 99%

A comprehensive overview of recent developments in RF-MEMS technology-based high-performance passive components for applications in the 5G and future telecommunications scenarios

Tagliapietra

Iannacci

2021

FACTA U EE

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The goal of this work is to provide an overview about the current development of radio-frequency microelectromechanical systems technology, with special attention towards those passive components bearing significant application potential in the currently developing 5G paradigm. Due to the required capabilities of such communication standard in terms of high data rates, extended allocated spectrum, use of massive MIMO (Multiple- Input-Multiple-Output) systems, beam steering and beam forming, the focus will be on devices like switches, phase shifters, attenuators, filters, and their packaging/integration. For each of the previous topics, several valuable contributions appeared in the last decade, underlining the improvements produced in the state of the art and the chance for RFMEMS technology to play a prominent role in the actual implementation of the 5G infrastructure.

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Section: Attenuatorsmentioning

confidence: 99%

A comprehensive overview of recent developments in RF-MEMS technology-based high-performance passive components for applications in the 5G and future telecommunications scenarios

Tagliapietra

Iannacci

2021

FACTA U EE

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“…Their predominant usage lies in applications demanding high linearity, low power consumption, and minimal temperature dependency, attributes that are almost unattainable with variable amplifiers [1]. Additionally, these components must meet criteria such as high dynamic range, low insertion loss, wide attenuation range, and broad frequency bandwidth [2].…”

Section: Introductionmentioning

confidence: 99%

“…In fact, since the very first device presented in 2009 [28], less than two dozen devices of this kind have populated the scientific literature. Both digital and analog [2,3] implementations have been considered for the developed RF-MEMS attenuators, with the former representing the vast majority. Reconfigurability, broadband behavior, and good linearity represent the most sought-after features of RF MEMS attenuators.…”

Section: Introductionmentioning

confidence: 99%

“…Concerning the number of achievable attenuation states, most of the digital implementations consist in 3-or 4-bit architectures [27,33], while some reach 8 bits [31]. The maximum attenuation levels of the general-purpose devices developed so far are quite broad-most of the implementations attain almost −20 dB [2,28], while others achieve −35 dB [34] or even −70 dB [33]. Regarding the attenuation steps, they are quite small in case of analog devices (0.2 dB in [2]) and ampler in digital implementations (e.g., 5 dB in [34] and 10 dB in [33]), with small root-mean-square errors ranging from 0.2% [2] to 5% [34].…”

Section: Introductionmentioning

confidence: 99%

“…The maximum attenuation levels of the general-purpose devices developed so far are quite broad-most of the implementations attain almost −20 dB [2,28], while others achieve −35 dB [34] or even −70 dB [33]. Regarding the attenuation steps, they are quite small in case of analog devices (0.2 dB in [2]) and ampler in digital implementations (e.g., 5 dB in [34] and 10 dB in [33]), with small root-mean-square errors ranging from 0.2% [2] to 5% [34]. Despite such promising results, many of these general-purpose devices still present two limitations: on one hand, the pursuit of an ever-growing number of attenuation states led to devices with a substantial footprint or aspect ratio, while on the other hand, the use of electrostatic actuation often led to devices operated by a high bias voltage.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Discussion and Demonstration of RF-MEMS Attenuators Design Concepts and Modules for Advanced Beamforming in the Beyond-5G and 6G Scenario—Part 1

Tagliapietra,

Giacomozzi,

Michelini

et al. 2024

Sensors

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This paper describes different variants of broadband and simple attenuator modules for beamforming applications, based on radio frequency micro electro-mechanical systems (RF-MEMS), framed within coplanar waveguide (CPW) structures. The modules proposed in the first part of this work differ in their actuation voltage, topology, and desired attenuation level. Fabricated samples of basic 1-bit attenuation modules, characterized by a moderate footprint of 690 × 1350 µm2 and aiming at attenuation levels of −2, −3, and −5 dB in the 24.25–27.5 GHz range, are presented in their variants featuring both low actuation voltages (5–9 V) as well as higher values (~45 V), the latter ones ensuring larger mechanical restoring force (and robustness against stiction). Beyond the fabrication non-idealities that affected the described samples, the substantial agreement between simulations and measurement outcomes proved that the proposed designs could provide precise attenuation levels up to 40 GHz, ranging up to nearly −3 dB and −5 dB for the series and shunt variants, respectively. Moreover, they could be effective building blocks for future wideband and reconfigurable RF-MEMS attenuators. In fact, in the second part of this work, combinations of the discussed cells and other configurations meant for larger attenuation levels are investigated.

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RF-MEMS Technology and Beamforming in 5G: Challenges and Opportunities for a Pair with a Still Untapped Potential

Tagliapietra

Iannacci

2022

Lecture Notes in Electrical Engineering

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Low-Cost Planar RF MEMS-Based Attenuator

Cited by 11 publications

References 7 publications

A comprehensive overview of recent developments in RF-MEMS technology-based high-performance passive components for applications in the 5G and future telecommunications scenarios

A comprehensive overview of recent developments in RF-MEMS technology-based high-performance passive components for applications in the 5G and future telecommunications scenarios

Discussion and Demonstration of RF-MEMS Attenuators Design Concepts and Modules for Advanced Beamforming in the Beyond-5G and 6G Scenario—Part 1

RF-MEMS Technology and Beamforming in 5G: Challenges and Opportunities for a Pair with a Still Untapped Potential

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