Low‐Cost Fully Transparent Ultraviolet Photodetectors Based on Electrospun ZnO‐SnO<sub>2</sub> Heterojunction Nanofibers

Tian, Wei; Zhai, Tianyou; Zhang, Chao; Li, Songlin; Wang, Xi; Liu, Fei; Liu, Dequan; Cai, Xingke; Tsukagoshi, Kazuhito; Golberg, Dmitri; Bando, Yoshio

doi:10.1002/adma.201301828

Cited by 282 publications

(207 citation statements)

References 29 publications

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“…Figure 6D shows the response time and recovery time of our device, which were found to be around 0.71 and 0.60 s, respectively. Both of them are shorter than 1 s, which are significantly faster compared with the previously reported perovskite detectors [37][38][39]. And, the faster response speed of this CsPb 2 Br 5 thin microsheets based photodetector could be ascribed to the high crystal quality of asprepared CsPb 2 Br 5 microsheets, which guaranteeing the efficient optical absorption and photogeneration of carriers.…”

Section: Resultsmentioning

confidence: 75%

All-Inorganic Perovskite CsPb2Br5 Microsheets for Photodetector Application

Tang

Han

et al. 2018

Front. Phys.

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Lead-halide perovskites have emerged as one kind of important optoelectronic materials with excellent performance in photovoltaic and light-emitting diode applications. Herein, we reported all-inorganic perovskite CsPb 2 Br 5 microsheets prepared by a facile injection method. Through the X-ray diffraction (XRD) and Scanning Electron Microscope (SEM), it could be seen that the CsPb 2 Br 5 microsheets showed single tetragonal crystalline phase and kept uniform square shape. Moreover, the as-synthesized CsPb 2 Br 5 microsheets exhibited photoluminescence emission at 513 nm, and the UV-vis absorption spectrum further indicated the band gap of CsPb 2 Br 5 microsheets was ≈2.50 eV. Additionally, the as-fabricated CsPb 2 Br 5 microsheets based photodetector exhibited faster photoresponse characteristics of short rise time (0.71 s) and decay time (0.60 s), which demonstrated its promising application as high performance electronic and optoelectronic devices.

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Section: Resultsmentioning

confidence: 75%

All-Inorganic Perovskite CsPb2Br5 Microsheets for Photodetector Application

Tang

Han

et al. 2018

Front. Phys.

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“…Therefore, the response speed after decorating is much faster than the original ZnO NW 46. Generally, the spatial electron−hole separation effect49 under 350 nm light illumination is pronounced, then the recombination rate of electrons and holes is further reduced for a PbS QD‐decorated ZnO NW photodetector, leading to an increase in photocurrent. The reason for the decrease of photocurrent may be explained as follows: In this parallel structure of NWF device, ZnO nanowire and PbS QDs film are connected to each other at the electrodes, and contact between the NWs and QDs, that form a shorted p–n junction,50 the schematic diagram is described in Figure 3d.…”

Section: Resultsmentioning

confidence: 99%

An Enhanced UV–Vis–NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

et al. 2016

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ZnO nanostructure‐based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV–vis–NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV–vis–NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

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“…The rise/decay time for the single-layer device is calculated to be 0.52/0.98 s and that for the bilayer device is 0.49/0.56 s (the rise time is defined as the time for the current to rise to 90% of the peak value and the decay time is defined as the time for the current to decay to 10% of the peak value). [33] The enhanced R and D*, the higher on/off ratio and the faster light response for the bilayer device (in comparison to that of the single-layer device) are all originated from the heterojunction-controlled photocarrier separation and recombination. [24,32,34] We did systematic investigation on the status of current perovskite-based photodetectors and summarized the results in Table S1 in the Supporting Information.…”

Section: Doi: 101002/aelm201700251mentioning

confidence: 99%

TiO₂ Nanocrystal/Perovskite Bilayer for High‐Performance Photodetectors

Ren

Chen

et al. 2017

Adv Elect Materials

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long carrier diffusion lengths, [9,10] and low deep-state defects. [11,12] Owing to their exciting photovoltaic applications, their promising potential in photodetection is drawing growing interest. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] Yang and co-workers first fabricated a vertical perovskite photodetector, [13] which demonstrated excellent light detecting capability. Lateral photodetectors are easy to make, and more importantly, their intrinsic gain mechanism can lead to very high photosensitivity. [30] Thereby many efforts have been devoted to developing such lateral devices. For single-layer perovskite devices reported, [14][15][16][17] relatively high detectivity (≈10 12 Jones) and short rise/decay time (dozens of milliseconds) were realized, but this is always associated with low on/ off ratios and poor electrical instabilities (induced by ion migration). To meet such challenge, bilayer devices are designed: perovskite film responsible for light absorption and another material film responsible for carriers transport. Significant enhancement in photoresponsivity has been achieved. [18][19][20][21][22][23][24] However, the reported bilayer devices usually employed high-conductive 2D layer to function as main photocarrier transport channel, and this leads to certain detrimental defects. For example, the graphene/perovskite bilayer devices exhibit very low on/off ratio of smaller than 2, [18][19][20][21] and the transition metal sulfides (WS 2 , MoS 2 )/perovskite bilayer devices have very long rise/decay time of a few seconds. [22,23] Also, it should be noted that graphene and the transition metal sulfides are usually deposited by complex and costly process, such as chemical vapor deposition, mechanical exfoliation, and hence is not suitable for large-area fabrication. Solutionprocessed MoS 2 [24] or organic [25,26] /CH 3 CH 3 PbI 3 photodetectors have been fabricated, but their performances are still limited by low on/off ratios of <500. Here we employed TiO 2 nanocrystal (NC) film to transport photocarrier. The designed TiO 2 NC/perovskite bilayer photodetector exhibits high overall performance with on/off ratio of 4000, photodetectivity of 1.85 × 10 12 Jones, and rise/decay time of 0.49/0.56 s. Figure 1a presents the schematic structure of the TiO 2 NC/ perovskite bilayer photodetector fabricated on a glass substrate. First, the TiO 2 NC film was spin coated on the glass substrate, and then Al electrodes were thermally evaporated on the TiO 2 NC film with help of an interdigital mask, resulting in a channel length of 80 µm and a channel width of 8800 µm. The perovskite film (CH 3 NH 3 PbI 3 ) was then spin coated on the TiO 2 NC film, completing the device fabrication (details Owing to their attractive performance in photovoltaic devices, organolead halide perovskite materials have attracted enormous interest for photodetector applications. However, current perovskite-based photodetectors mainly rely on high-conductive 2D materials such as graphene or transition metal sulfi...

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Low‐Cost Fully Transparent Ultraviolet Photodetectors Based on Electrospun ZnO‐SnO₂ Heterojunction Nanofibers

Abstract: Electrospun ZnO-SnO2 heterojunction nanofibers are demonstrated to be promising candidates for easily assembled fully transparent high-performance photodetectors.

Cited by 282 publications

References 29 publications

All-Inorganic Perovskite CsPb2Br5 Microsheets for Photodetector Application

All-Inorganic Perovskite CsPb2Br5 Microsheets for Photodetector Application

An Enhanced UV–Vis–NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

TiO₂ Nanocrystal/Perovskite Bilayer for High‐Performance Photodetectors

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Low‐Cost Fully Transparent Ultraviolet Photodetectors Based on Electrospun ZnO‐SnO2 Heterojunction Nanofibers

Abstract: Electrospun ZnO-SnO2 heterojunction nanofibers are demonstrated to be promising candidates for easily assembled fully transparent high-performance photodetectors.

Cited by 282 publications

References 29 publications

All-Inorganic Perovskite CsPb2Br5 Microsheets for Photodetector Application

All-Inorganic Perovskite CsPb2Br5 Microsheets for Photodetector Application

An Enhanced UV–Vis–NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

TiO2 Nanocrystal/Perovskite Bilayer for High‐Performance Photodetectors

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Low‐Cost Fully Transparent Ultraviolet Photodetectors Based on Electrospun ZnO‐SnO₂ Heterojunction Nanofibers

TiO₂ Nanocrystal/Perovskite Bilayer for High‐Performance Photodetectors