Low-Cost CuIn1−xGaxSe2 Ultra-Thin Hole-Transporting Material Layer for Perovskite/CIGSe Heterojunction Solar Cells

Abstract

This paper presents a new type of solar cellwith enhanced optical-current characteristics using an ultra-thin CuIn1−xGaxSe2 hole-transporting material (HTM) layer (<400 nm). The HTM layer was between a bi-layer Mo metal-electrode and a CH3NH3PbI3 (MAPbI3) perovskite active absorbing material. It promoted carrier transportand led to an improved device with good ohmic-contacts. The solar cell was prepared as a bi-layer Mo/CuIn1−xGaxSe2/perovskite/C60/Ag multilayer of nano-structures on an FTO (fluorine-doped tin oxide) glass substrate. The ultra-thin CuIn1−xGaxSe2 HTM layers were annealed at various temperatures of 400, 500, and 600 °C. Scanning electron microscopy studies revealed that the nano-crystal grain size of CuIn1−xGaxSe2 increased with the annealing temperature. The solar cell results show an improved optical power conversion efficiency at ~14.2%. The application of the CuIn1−xGaxSe2 layer with the perovskite absorbing material could be used for designing solar cells with a reduced HTM thickness. The CuIn1−xGaxSe2 HTM has been evidenced to maintain a properopen circuit voltage, short-circuit current density and photovoltaic stability.

Evaluating Cu2SnS3 Nanoparticle Layers as Hole-Transporting Materials in Perovskite Solar Cells

“…The resulting spectra under illumination were fitted using a previously reported equivalent circuit, which is demonstrated in Figure 6e, including the external series resistance of R s and parallel resistance-constant phase elements (R and CPE) for each arc. 16 Characteristic parameters of PSCs with different HTMs are tabulated in Table 2.…”

“…To investigate the interface property of perovskite/HTMs and the recombination process, electrochemical impedance spectroscopy (EIS) measurement was also performed under 1 sun illumination and in a dark condition at open-circuit voltage in a frequency range of 0.1 Hz to 1 MHz. The resulting spectra under illumination were fitted using a previously reported equivalent circuit, which is demonstrated in Figure e, including the external series resistance of R s and parallel resistance-constant phase elements (R and CPE) for each arc . Characteristic parameters of PSCs with different HTMs are tabulated in Table .…”

“…Moreover, photoinduced oxidation and deformation of spiro-OMeTAD under illumination and heating are other destructive factors. − Sanchez and Mas-Marza concluded that the spiro-OMeTAD degradation under the working conditions is the main reason for the low stability of the PSCs . As a result, researchers have focused their attention toward developing scalable easy-to-manufacture methods for more stable, environmentally friendly, inexpensive HTMs to advance the design of PSCs toward commercialization. ,− …”

A theoretical study for high-performance inverted p-i-n architecture perovskite solar cells with cuprous iodide as hole transport material

“…Inverted PSCs have gained great popularity due to low temperature processing techniques [13,14] and less current hysteresis [15,16]. PEDOT: PSS is a widely used HTM in p-i-n type PSCs due to its high work function, better film deposition, optical transparency and high conductivity [17].…”

Optimization of CuIn1–XGaXS2 Nanoparticles and Their Application in the Hole-Transporting Layer of Highly Efficient and Stable Mixed-Halide Perovskite Solar Cells

“…CIG­(S,Se) is known as a light absorber in thin-film solar cells. , However, it has been recently used as an HTM layer in PSCs (Table S1). − CIGS is usually deposited using vacuum-based techniques at high deposition temperatures. These methods are not compatible with the PSC fabrication process, therefore, the solution-based techniques have been applied under ambient conditions and low temperature .…”