Low-contact-resistance and smooth-surface Ti∕Al∕Nb∕Au ohmic electrode on AlGaN∕GaN heterostructure

Nakayama, Tatsuo; Miyamoto, Hiroyuki; Ando, Yasuhisa; Okamoto, Yasuhiro; Inoue, Takashi; Hataya, K.; Kuzuhara, Masaaki

doi:10.1063/1.1810210

Cited by 35 publications

(16 citation statements)

References 4 publications

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“…Ni is the most commonly used barrier layer for β-Ga 2 O 3 . There are other good candidates like Mo, Nb, and Ir with high melting points to substitute Ni which are expected to have lower reactivity and solubility for Au than Ni [72–75]. The fourth cap layer acts as a protective layer to prevent or minimize the oxidation of underlying metals.…”

Section: Approaches To Ohmic Contactsmentioning

confidence: 99%

Recent Advances in β-Ga2O3–Metal Contacts

Huan

Sun

et al. 2018

Nanoscale Res Lett

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Ultra-wide bandgap beta-gallium oxide (β-Ga2O3) has been attracting considerable attention as a promising semiconductor material for next-generation power electronics. It possesses excellent material properties such as a wide bandgap of 4.6–4.9 eV, a high breakdown electric field of 8 MV/cm, and exceptional Baliga’s figure of merit (BFOM), along with superior chemical and thermal stability. These features suggest its great potential for future applications in power and optoelectronic devices. However, the critical issue of contacts between metal and Ga2O3 limits the performance of β-Ga2O3 devices. In this work, we have reviewed the advances on contacts of β-Ga2O3 MOSFETs. For improving contact properties, four main approaches are summarized and analyzed in details, including pre-treatment, post-treatment, multilayer metal electrode, and introducing an interlayer. By comparison, the latter two methods are being studied intensively and more favorable than the pre-treatment which would inevitably generate uncontrollable damages. Finally, conclusions and future perspectives for improving Ohmic contacts further are presented.

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Section: Approaches To Ohmic Contactsmentioning

confidence: 99%

Recent Advances in β-Ga2O3–Metal Contacts

Huan

Sun

et al. 2018

Nanoscale Res Lett

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“…For example, compared with a contact resistance of 10 −5 Ω cm 2 for Ti/Al electrodes that were annealed at 600 • C, values of ∼10 −6 Ω cm 2 were reported for Ti/Al/Ni/Au, Ti/Al/Mo/Au and Ti/Al/Nb/Au layers annealed at 800-900 • C [17]. For example, compared with a contact resistance of 10 −5 Ω cm 2 for Ti/Al electrodes that were annealed at 600 • C, values of ∼10 −6 Ω cm 2 were reported for Ti/Al/Ni/Au, Ti/Al/Mo/Au and Ti/Al/Nb/Au layers annealed at 800-900 • C [17].…”

Section: Fig 43 Typical Process Used For Fabricating Algan/gan Hetmentioning

confidence: 99%

“…17 shows a comparison for the cut-off frequency (f T ) dependence of the maximum operating voltage (V max ) of diamond with other semiconductors. The product f T V max offers a practical evaluation of the performance of…”

mentioning

confidence: 99%

Electronic Devices

Miyamoto¹,

Arai²,

Kawarada³

et al. 2007

Wide Bandgap Semiconductors

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ApplicationsThere are many potential applications of nitride-semiconductor (GaN-based FETs) electron devices because of their extremely high performance at high voltages and high frequencies [1][2][3]. This operation is possible because of the high breakdown electric field (3 × 10 6 V cm −1 , ten times larger than Si and GaAs) and electron drift velocity (2 × 10 7 cm s −1 ) at high electric fields of GaN. These properties of GaN offer major advantages in the trade-off between operating voltage and cut-off frequency that limit the operation of conventional field effect transistors. Further, the polarization effect at the AlGaN/GaN heterojunction interface results in the creation of an electron carrier density of approximately 10 13 cm −2 ; a value that is five times larger than that of AlGaAs/GaAs heterostructures. These characteristics of high frequency, high voltage and high carrier density are particularly effective in enabling the fabrication of smaller devices delivering high output power at high frequencies.A particularly important application of nitride semiconducting high frequency devices is for microwave power transmission amplifiers for third generation mobile telephone base stations [4][5][6][7]. These applications necessitate highly linear device characteristics for amplification of digitally modulated signals. Further, the use of nitride semiconductors enables high power output amplifier modules that incorporate simplified voltage-voltage converter and output matching circuits with high efficiency.There is also a growing demand for wireless technology for use in broadband internet communication such as fixed wireless access (FWA) and satellite internet access networks. These applications require high efficiency amplifiers with power ratings of ∼10 W, operating in the 22-38 GHz frequency

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“…Devices on AlGaN/GaN heterostructures, such as heterojunction field effect transistors (HFET), high electron mobility transistors (HEMTs) and MOS-HEMTs have been developed as very perspective for microwave amplifications [1]- [4]. The good device performance depends strongly on the quality of the metal electrode, especially, on the properties of the ohmic contact.…”

Section: Introductionmentioning

confidence: 99%

Dependence of the electrical and morphological properties on the Ti and Al content in Mo-based ohmic contacts for III–V nitrides

Kolaklieva

Chitanov

Kakanakov

et al. 2012

2012 28th International Conference on Microelectronics Proceedings

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Four types of Mo-based ohmic contacts with a varied Al and Ti content are developed and investigated regarding the ohmic properties, surface morphology and edge acuity. It is found out that the Ti/Mo/Ti/Au metallization combines the lowest contact resistivity of 8.8x10 -6 Ω.cm 2 and low surface roughness of 3.8 nm. The presence of Al in the contact composition does not improve the electrical properties and the surface morphology. Its effect on these properties depends strongly on the Ti/Al ratio in the contact composition.

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Low-contact-resistance and smooth-surface Ti∕Al∕Nb∕Au ohmic electrode on AlGaN∕GaN heterostructure

Cited by 35 publications

References 4 publications

Recent Advances in β-Ga2O3–Metal Contacts

Recent Advances in β-Ga2O3–Metal Contacts

Electronic Devices

Dependence of the electrical and morphological properties on the Ti and Al content in Mo-based ohmic contacts for III–V nitrides

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Low-contact-resistance and smooth-surface Ti∕Al∕Nb∕Au ohmic electrode on AlGaN∕GaN heterostructure

Cited by 35 publications

References 4 publications

Recent Advances in β-Ga2O3–Metal Contacts

Recent Advances in β-Ga2O3–Metal Contacts

Electronic Devices

Dependence of the electrical and morphological properties on the Ti and Al content in Mo-based ohmic contacts for III&#x2013;V nitrides

Contact Info

Product

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About

Dependence of the electrical and morphological properties on the Ti and Al content in Mo-based ohmic contacts for III–V nitrides