Low complexity RF-MEMS switch optimized for operation up to 120°C

Sterile, A.; Siegel, C.; Ziegler, Volker; Schonlinner, B.; Prechtel, U.; Thilmont, S.; Seidel, H.; Schmid, U.

doi:10.1109/emicc.2007.4412741

Cited by 8 publications

(2 citation statements)

References 3 publications

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“…The switch was tested well above 100 °C for several hours without any indication of shape change or performance changes [8]. The switch was tested well above 100 °C for several hours without any indication of shape change or performance changes [8].…”

Section: Rf-mems Technology Description and Its Benefitsmentioning

confidence: 99%

Switchable microwave circuits using the EADS low-complexity RF-MEMS process

Ziegler¹,

Siegel²,

Schonlinner³

et al. 2007

Frequenz

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This article illustrates the ongoing RF-MEMS development at EADS Innovation Works in Germany from the basic drivers for the use of RF-MEMS in aeronautic and space systems to the major results achieved so far. It discusses in detail the EADS low-complexity RF-MEMS in-house process and highlights the demonstration of several switchable microwave circuits like phase shifters, filters and patch antennas.

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Section: Rf-mems Technology Description and Its Benefitsmentioning

confidence: 99%

Switchable microwave circuits using the EADS low-complexity RF-MEMS process

Ziegler¹,

Siegel²,

Schonlinner³

et al. 2007

Frequenz

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“…Some methods have been adopted to reduce the sensitivity to temperature, for example, using composite beam, optimising structure, and even employing new materials and so on. [3][4][5][6][7][8][9][10][11] All of these methods not only require advanced MEMS design efforts and special materials, but also have precise fabrication flow.…”

Section: Introductionmentioning

confidence: 99%

Design of DC-contact RF MEMS switch with temperature stability

Sun

Zhu

et al. 2015

AIP Advances

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Etching technique for ruthenium with a high etch rate and high selectivity using ozone gas In order to improve the temperature stability of DC-contact RF MEMS switch, a thermal buckle-beam structure is implemented. The stability of the switch pull-in voltage versus temperature is not only improved, but also the impact of stress and stress gradient on the drive voltage is suppressed. Test results show that the switch pull-in voltage is less sensitive to temperature between -20 • C and 100 • C. The variable rate of pull-in voltage to temperature is about -120 mV/ • C. The RF performance of the switch is stable, and the isolation is almost independent of temperature. After being annealed at 280 • C for 12 hours, our switch samples, which are suitable for packaging, have less than 1.5% change in the rate of pull-in voltage. C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. [http://dx Design of DC-contact RF MEMS switch with temperature stability

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