Low bias reactive ion etching of GaAs with a SiCl4∕N2∕O2 time-multiplexed process

Golka, S.; Schartner, S.; Schrenk, W.; Strasser, G.

doi:10.1116/1.2737439

Cited by 23 publications

(10 citation statements)

References 24 publications

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“…However there has been limited success as we were unable to find any relevant research in the literature. In 2007, Golka et al [11] published nice results on the directional pulsed-mode DRIE though it was limited to GaAs etching at relatively low speed. The deposition of SiO x -based film was promoted by the mixing of O 2 with SiCl 4 gas during the deposition step, as found earlier by Varoutsis et al [12].…”

Section: Introductionmentioning

confidence: 99%

Black silicon method XI: oxygen pulses in SF₆plasma

Jansen

Boer

et al. 2010

J. Micromech. Microeng.

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A detailed study is performed to understand and show the potential of high-speed, deep reactive ion etching (DRIE) of silicon using oxygen inhibitor pulses as a replacement for hydro-fluorocarbons (HFCs). This process might be considered the 'holy grail' in DRIE as the environmental restrictions for the use of HFCs are becoming increasingly stronger. When compared to the usual cryogenic mixed oxygen DRIE and with respect to profile control, the proposed cryogenic pulsed oxygen DRIE is virtually independent of silicon loading, mask material and trench width, and it is less prone to the formation of black silicon (BS). Some indication is found that one of the major causes for the formation of BS is the existence of dust inside the plasma. Dust is created when oxygen and silicon tetra fluoride (SiF 4 being the reaction product of silicon etching) coincide inside the plasma glow. This occurs in mixed oxygen plasma; the silica dust falls onto the wafer where it starts to form BS when directional etching is requested. Dust particles can also form when strong polymerizing gases are fed into the plasma. This is the case for the Bosch process using HFC pulses forming carbonic dust. The particles, and consequently the BS, are observed to be limited when the SiF 4 and O 2 gases are time separated, which forms the basis of the proposed pulsed oxygen DRIE. Another advantage of pulsed oxygen DRIE with respect to Bosch processing is that the protective skin of the sidewall during etching-a kind of native oxide-is believed to be self-terminating. This makes the process insensitive to profile variations caused by parameter fluctuations. It is found that inhibiting oxygen pulses give excellent results with respect to profile control at cryogenic temperatures (between −120 and −80 • C) and can still compete with HFC pulses up to intermediate low temperatures (between −80 and −40 • C). When selecting the proper DRIE conditions, the oxygen pulsed mode performs with excellent profile verticality and selectivity while keeping the silicon clean. It also shows a high etch rate up to 25 μm min −1 (<1% Si load of a 100 mm wafer). When the temperature is raised further (between −40 and 0 • C), the strength of the oxygen sidewall protection progressively fails and more oxygen with more bias is needed to keep sufficient profile directionality. The use of stronger oxide-forming agents is suggested in order to enable good performance at the more convenient, higher temperature, low bias conditions.

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Section: Introductionmentioning

confidence: 99%

Black silicon method XI: oxygen pulses in SF₆plasma

Jansen

Boer

et al. 2010

J. Micromech. Microeng.

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“…The anisotropic etching of III-V materials in SiCl 4 chemistries has been already reported in the literature. [7][8][9] In this work we show that etched features with a vertical and smooth profile can be obtained using SiCl 4 /H 2 gas mixture without the assistance of the C-Si electrode coverplate, and we discuss the importance of the simultaneous presence of Si and H species in the plasma. We then investigate the possibility of adding SiH 4 , containing both Si and H species, in order to obtain anisotropic InP etching independently of the electrode coverplate material.…”

Section: Introductionmentioning

confidence: 78%

Addition of Si-Containing Gases for Anisotropic Etching of III–V Materials in Chlorine-Based Inductively Coupled Plasma

Gatilova

Bouchoule

Patriarche

et al. 2011

Jpn. J. Appl. Phys.

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We discuss the possibility of obtaining high-aspect-ratio etching of InP materials in Cl2- and HBr-based inductively coupled plasmas (ICP) with the addition of Si-containing gases (SiH4 or SiCl4). A vertical and smooth etching profile is demonstrated in SiCl4/H2 plasma. The effect of adding of a small amount of SiH4 to a previously optimised Cl2/H2 chemistry is presented, and new SiH4/Cl2 and SiH4/HBr chemistries are proposed. Ex-situ energy-dispersive X-ray spectroscopy coupled to transmission electron microscopy (EDX–TEM) is used to analyze the composition of the thin passivation layer deposited on the etched sidewalls. We show that it consists of a Si-rich silicon oxide (Si/O∼1) in Cl2/H2/SiH4 chemistry, and is changed to nano-crystalline (nc-) Si in SiH4/Cl2 chemistry depending on the SiH4 percentage. Moreover, we show that deep anisotropic etching of InP independent of the electrode coverplate material can be obtained via a SiO x passivation mechanism with the addition of Si-containing gases.

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“…7,9 We have also shown that, under our plasma conditions, smooth and anisotropic ICP etching could not be obtained if the Si wafer was re-placed by another material ͑e.g., Al 2 O 3 , AlN, or SiO 2 wafers͒. 11 SiCl 4 has also been successfully used for the ICP etching of InP. or more and used to etch III-V samples of smaller size ͑2 in.…”

Section: Introductionmentioning

confidence: 99%

High-aspect-ratio inductively coupled plasma etching of InP using SiH4/Cl2: Avoiding the effect of electrode coverplate material

Gatilova

Bouchoule

Guilet

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inInductively coupled plasma etching of through-cell vias in III-V multijunction solar cells using SiCl4/Ar J. Vac. Sci. Technol. B 31, 06FF05 (2013); 10.1116/1.4822015 Inductively coupled plasma deep etching of InP/InGaAsP in Cl2/CH4/H2 based chemistries with the electrode at 20°C J. Vac. Sci. Technol. B 30, 051208 (2012); 10.1116/1.4748807HBr-based inductively coupled plasma etching of high aspect ratio nanoscale trenches in Ga In As P ∕ In P Smooth sidewall in InP-based photonic crystal membrane etched by N 2 -based inductively coupled plasmaA new SiH 4 / Cl 2 chemistry is proposed for the high-aspect-ratio etching of InP-based heterostructures. Anisotropic etching is obtained through the deposition of a SiO x passivation layer on the etched sidewalls. SiH 4 has been chosen as a single precursor for both Si and H species that are necessary to promote the passivation process. Previously developed Cl 2 / H 2 -or HBr-based chemistries for anisotropic etching of laser waveguides or vertical microcavities require a silicon wafer below the InP samples in order to assist the passivation mechanism. In contrast, the authors show that a SiO x passivation can be achieved and maintained almost independent of the nature of the wafer surface when SiH 4 is added. This is of practical importance for the processing of III-V wafers having the same size as the electrode or for III-V heterogeneous integration when III-V dies bonded onto a 200/300 mm diameter wafer have to be etched. Smooth, notch-free, anisotropic etching of InGa͑Al͒As/InP heterostructures is demonstrated. Ex situ energy-dispersive x-ray spectroscopy coupled to a transmission electron microscope is used to analyze the composition of the thin passivation layer deposited on the sidewalls of etched features. The authors show that the passivation layer consists of a Si-rich silicon oxide ͑Si/ O ϳ 1͒ in Cl 2 / H 2 / SiH 4 chemistry and is changed to nanocrystalline Si in SiH 4 / Cl 2 chemistry depending on the SiH 4 concentration in the feed gas. An aspect ratio as high as 28 is obtained in the latter case.

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Low bias reactive ion etching of GaAs with a SiCl4∕N2∕O2 time-multiplexed process

Cited by 23 publications

References 24 publications

Black silicon method XI: oxygen pulses in SF₆plasma

Black silicon method XI: oxygen pulses in SF₆plasma

Addition of Si-Containing Gases for Anisotropic Etching of III–V Materials in Chlorine-Based Inductively Coupled Plasma

High-aspect-ratio inductively coupled plasma etching of InP using SiH4/Cl2: Avoiding the effect of electrode coverplate material

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Low bias reactive ion etching of GaAs with a SiCl4∕N2∕O2 time-multiplexed process

Cited by 23 publications

References 24 publications

Black silicon method XI: oxygen pulses in SF6plasma

Black silicon method XI: oxygen pulses in SF6plasma

Addition of Si-Containing Gases for Anisotropic Etching of III–V Materials in Chlorine-Based Inductively Coupled Plasma

High-aspect-ratio inductively coupled plasma etching of InP using SiH4/Cl2: Avoiding the effect of electrode coverplate material

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Black silicon method XI: oxygen pulses in SF₆plasma

Black silicon method XI: oxygen pulses in SF₆plasma