Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQW ridge-waveguide lasers

Ralston, J.D.; Weisser, S.; Eisele, K.; Sah, R. E.; Larkins, E.C.; Rosenzweig, J.; Fleißner, J.; Bender, K.

doi:10.1109/68.324673

Cited by 42 publications

(13 citation statements)

References 13 publications

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“…For optical high-data-rate transmiss'ion, not only in telecom systems but also for short-haul optical interconnects, laser diodes that can be directly modulated at very high bandwidths are being developed. Properly designed laser diodes with pdoped multiple quantum wells in the active zone yielded a record value of 33 GHz modulation bandwidth at a bias of only 65 mnA (8]. This enables data rates beyond 40 Gbitls.…”

Section: Light Emittersmentioning

confidence: 95%

State-of-the-art III-V semiconductor devices for microwave/mm-wave and optoelectronic applications

Diehl

Schlechtweg

1995

25th European Microwave Conference, 1995

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High-speed limiting amplifiers are widely used in data transmission systems. First, limiting amplifiers can be used in die clock recovery circuit including a passive filter (1) to suppress the amplitude variation of the clock signal detected from the input data Second, a limiting amplifier can be used as the main amplifier of an optical data receiver(2). In comparison with gain controlled amplifiers (3), in which the amplitude of the data stream is regulated manually or by means of a voltage detected from the data stream, die amplitude regulating function of a limiting amplifier directly acts on each single bit. A limiting amplifier can therefore suppress both of the fast and slow amplitude variations. There exists no time constant problem in a limiting amplifier as in a gain controlled one. In addition the design of a limiting amplifier is simpler. Third, limiting amplifiers can be used as input and output butlers in a lot of data- and clock-processing circuits. Therefore, the design of a limiting amplifier with a high speed, a high gain and a wide dynamic range is a basic task for the realization of high-speed data transmission systems. A limiting amplifier fabricated using Si-bipolar technology. can be operated at 15 Gb/s with a power consumption of 720 mW (4). An AIGaAs/GaAs HBT limiting amplifier can be operated up to 15 GHz with a power consumption of 1.5 W (5). The limiting amplifier presented in this paper shows a higher bandwidth but needs a much lower dc power

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Section: Light Emittersmentioning

confidence: 95%

State-of-the-art III-V semiconductor devices for microwave/mm-wave and optoelectronic applications

Diehl

Schlechtweg

1995

25th European Microwave Conference, 1995

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“…The nominal thickness, alloy composition and doping concentration were used for each layer with the exception of the doping level in the active region. For each QW-barrier system (of thickness LB + LQW) the doping density is taken as the average acceptor concentration (Na) measured from the C-V concentration profile, based on the fact that charge conservation is fulfilled for C-V profiles:'3 (Na)= X JNcv(xcv)dxcv (9) LB+LQW LB+LQW The simulated C-V concentration profiles were deduced from the simulated C-V characteristics by using the same approach as for the experimental characteristics, i. e. Eq. 1.…”

Section: '\M (X) Ax)mentioning

confidence: 99%

<title>Characterization and modeling of InGaAs/GaAs multiple quantum well lasers by capacitance-voltage measurements</title>

Arias

Esquivias

Buerkner

et al. 1997

Physics and Simulation of Optoelectronic Devices V

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We have measured and analyzed the room-temperature capacitance-voltage (C-V) characteristics of In0 35Ga 65As/GaAs MQW laser structures with different doping levels in the active region. Average doping densities in the well-barrier regions were directly extracted from the as-measured carrier profiles.A model for the C-V measurements, including the self-consistent solution of Poisson and Schrodinger equations, was developed. The carrier profiles obtained from the simulated C-V characteristics do not correspond to the free carrier profiles since the local charge neutrality hypothesis does not hold for QW structures. Thus, the true carrier distribution can only be determined from a full quantum-mechanical simulation of the laser structure. We have determined, from the comparison between experimental and simulated profiles, a conduction band offset /iEc/AEgof 0.8 1 . We have also applied C-V measurements to samples with interdiffused QWs, and obtained the characteristic interdiffusion length.

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“…59 Concerning the confinement structure of the optical waveguide most of the studies are based on ungraded heterostructures ( referred to as SCH separate confinement heterostructure or sometimes called step heterostructure). In SCH structures the potentials are nearly horizontal and vary slowly with distance in bulk layers which causes rather weak electrical fields.…”

Section: Introductionmentioning

confidence: 99%

Carrier and photon dynamics in transversally asymmetric high-speed AlGaAs/InP MQW lasers

Hillmer¹,

Greiner

Steinhagen

et al. 1996

SPIE Proceedings

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Carrier transport and carrier capture were reported to markedly influence the carrier and photon dynamics in quantum-well semiconductor lasers and to limit the modulation bandwidth. Recently, model calculations of various degrees of complexity have isolated special aspects of the problem. We give an extended overview and report on our theoretical and experimental results on l.S5m AlGaInAs/InP lasers with strongly asymmetric transversal waveguide structures. The selfconsistent solution of the Poisson and continuity equations is based on measured carrier mobilities and not only limited to the confinement region. The confinement factor is pointed out to be important when comparing different asymmetric structures. The use of optimized asymmetric structures is demonstrated theoretically and experimentally to enable a distinct improvement in modulation bandwidth and to counteract the limiting physical processes such as carrier transport and carrier capture-escape. Finally, the influence of the shape of the longitudinal carrier and photon density profiles on the modulation behavior is studied. We found that a better homogenization of these profiles for transversally optimized structures may slightly increase the bandwidth. This is further confirmed experimentally by comparing lasers of different profiles applying chirped DFB gratings implemented by bent waveguides.

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Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQW ridge-waveguide lasers

Cited by 42 publications

References 13 publications

State-of-the-art III-V semiconductor devices for microwave/mm-wave and optoelectronic applications

State-of-the-art III-V semiconductor devices for microwave/mm-wave and optoelectronic applications

<title>Characterization and modeling of InGaAs/GaAs multiple quantum well lasers by capacitance-voltage measurements</title>

Carrier and photon dynamics in transversally asymmetric high-speed AlGaAs/InP MQW lasers

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