<title>Characterization and modeling of InGaAs/GaAs multiple quantum well lasers by capacitance-voltage measurements</title>

Abstract

We have measured and analyzed the room-temperature capacitance-voltage (C-V) characteristics of In0 35Ga 65As/GaAs MQW laser structures with different doping levels in the active region. Average doping densities in the well-barrier regions were directly extracted from the as-measured carrier profiles.A model for the C-V measurements, including the self-consistent solution of Poisson and Schrodinger equations, was developed. The carrier profiles obtained from the simulated C-V characteristics do not correspond to the free carrier profiles since the local charge neutrality hypothesis does not hold for QW structures. Thus, the true carrier distribution can only be determined from a full quantum-mechanical simulation of the laser structure. We have determined, from the comparison between experimental and simulated profiles, a conduction band offset /iEc/AEgof 0.8 1 . We have also applied C-V measurements to samples with interdiffused QWs, and obtained the characteristic interdiffusion length.

Temperature dependent surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs double quantum well structures grown by metal organic vapor phase epitaxy

“…The value of Q c reported by other groups was varied in the range 0.6-0.81. [21][22][23] Table II lists the experimental results and theoretical calculation for the four samples. In this study, we have obtained the best agreement between experiments and theoretical calculations for Q c = ͑67Ϯ 2͒%.…”