2005
DOI: 10.1007/s11664-005-0091-8
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Low-base-resistance InP/InGaAs heterojunction bipolar transistors with a compositionally graded-base structure

Abstract: To reduce base resistance of an InP/InGaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy, the doping characteristics of carbon-doped InGaAs and the dependence of doping concentration on current gain were investigated. Using a thicker graded base was found to increase current gain significantly, resulting in increased doping level in the InGaAs: C-base layer. In particular, an 80-nm-thick graded base produces a base sheet resistance of 285 Ω/sq and maintains a practically useful c… Show more

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