Lossless Solvent-based Extension Implant Strip

Vos, Rita; Mannaert, G.; Halder, Sandip; Wada, M.; Sonnemans, Roger; Tsvetanova, Diana; Valckx, Nick; Vanstreels, Kris; Conard, Thierry; Mertens, Paul

doi:10.1149/1.3202651

Cited by 11 publications

(11 citation statements)

References 7 publications

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“…Hence, new cleaning solutions are continuously being developed for post I/I resist strips. 4) For instance, solvents which show good compatibility with respect to germanium substrates are being considered for future devices. 6) In this work, we concentrate on the development of a fast metrology for the screening of different solutions for post I/I resist strip by using the background signal of a light scattering tool.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Post Ion-Implantation Resist Strip with the Background Signal of a Light Scattering Tool

Halder

Vos

Wada

et al. 2010

Jpn. J. Appl. Phys.

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A new method for the fast evaluation of photoresist residue removal efficiency is discussed in this paper. In this method “haze” which is the low frequency component of the background signal of a light scattering instrument is mapped over the entire wafer. Since, the background signal is sensitive to any kind of surface anomaly it can be used as a metric for any kind of surface roughness or residues. The goal of this work was to devise a fast and cheap screening method for photoresist residue removal efficiency. Using this method we show that cleaning solutions can be easily screened for their residue removal efficiencies based on the haze signal of the light scattering instrument. Different ion implantation conditions are checked and also different aerosol spray assisted cleaning conditions are evaluated.

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Section: Introductionmentioning

confidence: 99%

Evaluation of Post Ion-Implantation Resist Strip with the Background Signal of a Light Scattering Tool

Halder

Vos

Wada

et al. 2010

Jpn. J. Appl. Phys.

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“…33 A less traditional way of working are the ozone based wet strips. [15][16][17] Over the past years, ozone dissolved in water was shown to be an efficient process in removal of organic contamination and PR layers, such as positive resist and ESCAP-type DUV resist. [18][19][20] This process was regarded as a more environmentally friendly process, with lower costs, compared to traditional processes.…”

mentioning

confidence: 99%

Towards Fully Aqueous Ozone Wet Strip of 193 nm Photoresist Stack Using UV Pre-Treatments in Low-kPatterning Applications

Kesters

Lux

et al. 2012

J. Electrochem. Soc.

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All-wet processes are gaining a renewed interest for the removal of post-etch photoresist (PR) and Bottom Anti Reflective Coating (BARC) in the Back-End-Of-Line (BEOL) semiconductor manufacturing, as an alternative to plasma strip, which may cause damage to advanced porous low-k materials. However, degradation of DUV PR by etch plasmas results in a modified top layer that is cross-linked (so-called crust) and therefore not soluble anymore using pure organic solvents. This study investigates the combination of UV with ozonated processes to remove PR and BARC in BEOL applications. Treatment of PR and BARC by UV irradiation was proved to be an interesting process to increase the concentration of reactive C=C bonds in the post-etch PR and BARC layer. Another effect of UV irradiation is that it can cause scissioning of C-C bonds in the PR main chain, thereby improving the dissolution of the PR in solvents. This UV pre-treatment was used as a preliminary step to enhance PR and BARC removal by ozonated wet strips. Different pathways were studied in detail, leading to the development of a fully aqueous ozonated wet strip process.

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“…[5][6][7][8][9][10] A wet resist strip using organic solvent is being considered again because of its excellent selectivity to sensitive ultrashallow junction implanted substrates and novel materials. [11][12][13] However, the crust on the top and sidewalls of the II-PR consists of a highly cross-linked resist that has very limited solubility in common organic solvents unlike the underlying bulk PR. 14,15 Physical enhancement is needed to crack the crusted top and sidewalls of the resist and enable dissolution of the bulk PR.…”

mentioning

confidence: 99%

“…It has already been demonstrated that the introduction of a UV/O 3 pre-and/or post-treatment step enables complete removal of II-PR by a soft physical solvent strip. 12,13 However, the oxidizing ambient can induce an oxidation of the implanted substrate, metal gate, and high-k materials present on the wafer. Significant enhancement of the implanted resist stripping efficiency is also achieved by UV treatment in the absence of an oxidizer but with slightly lower rates.…”

mentioning

confidence: 99%

Removal of High-Dose Ion-Implanted 248 nm Deep UV Photoresist Using UV Irradiation and Organic Solvent

Tsvetanova

Vos

Vanstreels

et al. 2011

J. Electrochem. Soc.

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Wet processes using organic solvents are gaining a renewed interest for stripping high dose ͑ м 1 ϫ 10 15 atoms . cm −2 ͒ ionimplanted photoresist ͑II-PR͒ in front-end-of-line semiconductor manufacturing because of their excellent selectivity to ultrashallow implanted substrates and novel materials. However, the highly cross-linked resist layer ͑so-called crust͒, formed on the top and sidewalls of the resist has very limited solubility in organic solvents unlike the underlying nonimplanted resist ͑bulk͒. This study investigates the effect of UV pre-and post-treatment on II-PR for enabling its removal by organic solvent. Moreover, the impact of the UV wavelength, dose, and power density on the crust and bulk is presented. Optimal conditions of the UV pre-and post-treatment can be determined. Short ͑ Ͻ 200 nm͒ and long wavelengths ͑300-400 nm͒ at low doses induce more scission of the crust with less cross-linking of the bulk, resulting in higher solubility of the II-PR in organic solvents. Moreover, the short wavelength pretreatment is advised because of its bigger effect on the crust, resulting in significant enhancement of the residue removal. In addition, a post-treatment using short wavelengths has high removal efficiency in contrast to the long wavelengths treatment. Finally, no significant impact of the power density is revealed.

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Lossless Solvent-based Extension Implant Strip

Cited by 11 publications

References 7 publications

Evaluation of Post Ion-Implantation Resist Strip with the Background Signal of a Light Scattering Tool

Evaluation of Post Ion-Implantation Resist Strip with the Background Signal of a Light Scattering Tool

Towards Fully Aqueous Ozone Wet Strip of 193 nm Photoresist Stack Using UV Pre-Treatments in Low-kPatterning Applications

Removal of High-Dose Ion-Implanted 248 nm Deep UV Photoresist Using UV Irradiation and Organic Solvent

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