Evaluation of Post Ion-Implantation Resist Strip with the Background Signal of a Light Scattering Tool

Abstract

A new method for the fast evaluation of photoresist residue removal efficiency is discussed in this paper. In this method “haze” which is the low frequency component of the background signal of a light scattering instrument is mapped over the entire wafer. Since, the background signal is sensitive to any kind of surface anomaly it can be used as a metric for any kind of surface roughness or residues. The goal of this work was to devise a fast and cheap screening method for photoresist residue removal efficiency. Using this method we show that cleaning solutions can be easily screened for their residue removal efficiencies based on the haze signal of the light scattering instrument. Different ion implantation conditions are checked and also different aerosol spray assisted cleaning conditions are evaluated.

Characterization and Control of Nanostructure Size Variation

“…On the other hand, in order to put the developed technology to practical use, waferlevel integration of nanodevices, as well as wafer-level evaluation of variability will be necessary. 3,4) Wafer-level evaluation of nanostructure size is possible by ellipsometric porosimetry 2,[5][6][7][8][9][10] as well as by X-ray techniques. 2,[11][12][13][14] In this study, we took advantage of a wafer-level evaluation technique of nanostructures and applied it to a series of samples with nanostructures to demonstrate its effectiveness in revealing the dependences of their size and size variation on sample preparation conditions.…”