We study electronic multiple-slit diffraction with a quantum mechanical approach. Our theoretical results are in good agreement with classical theoretical calculations and we obtain the following resluts: (1) There are N − 2 secondary maxima and N − 1 minima between the two principle maxima in diffraction pattern. (2) As the slit number N increasing, the diffraction intensity increases and the pattern width becomes narrow. (3) The slit thickness c dose not have any influence on diffraction pattern when slit width a is far greater than the electronic wavelength λ, for example, the ratio of a λ = 10 5 , and at the ratio, the missingorder phenomenon can be observed when d+a a = n (n = 1, 2, 3 . . .), where d is the distance of slit-to-slit. (4) When a is not far greater than λ (the ratio of a λ = 500), the slit thickness c has an effect on diffraction pattern. The missing-order phenomenon can be shown only if the slit thickness c is small enough, and it disappears when the slit thickness c becomes large. In addition, the slit thickness c affects the relative diffraction intensity of the diffraction pattern.