2011
DOI: 10.1016/j.egypro.2011.06.134
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Loss analysis and improvements of industrially fabricated Cz-Si solar cells by means of process and device simulations

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Cited by 11 publications
(3 citation statements)
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“…If LID is not taken into account, then the optimal efficiency can be achieved with a base resistivity as low as 0.7 Ωcm and a comparably wide spacing of two rear contacts per front grid finger. Implementation of the lifetime and injection behavior change due to LID into the simulation is accomplished in a similar way to Steingrube et al [22], but with a focus on the industrial PERC design. In the LID case, the post-degradation lifetime is not fixed, but obtained by applying Bothe's empirical formula [23]:…”
Section: Discussionmentioning
confidence: 99%
“…If LID is not taken into account, then the optimal efficiency can be achieved with a base resistivity as low as 0.7 Ωcm and a comparably wide spacing of two rear contacts per front grid finger. Implementation of the lifetime and injection behavior change due to LID into the simulation is accomplished in a similar way to Steingrube et al [22], but with a focus on the industrial PERC design. In the LID case, the post-degradation lifetime is not fixed, but obtained by applying Bothe's empirical formula [23]:…”
Section: Discussionmentioning
confidence: 99%
“…1 (right side). Thereby, we separate the remaining recombination losses into front, rear and base contributions at the different operating conditions: short-circuit, maximum power point (MPP) and open-circuit [7].…”
Section: Loss Analysismentioning
confidence: 99%
“…On the other hand, several works have proved the usefulness of TCAD numerical simulations in order to study the physical and electrical mechanisms limiting the performance of solar cells [3][4][5][6][7][8]. For this reason, in this paper we will investigate the impact of VIA resistance, separation region and busbar width by means of numerical simulations.…”
Section: Introductionmentioning
confidence: 99%