Longitudinal Magnetoresistance of n‐Type InAs

Tsidilkovski, I. M.; Akselrod, M. M.; Sokolov, V. I.; Harus, G. I.

doi:10.1002/pssb.19650090239

Cited by 5 publications

(3 citation statements)

References 4 publications

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“…The method of determining separately the parameters of electrons and heavy charge carriers, employed by Giriat et al (1976) made it possible to ascertain that when T = 5K, Hg09Cd01Te samples with NA --~ 10J7cm 3 display, in actual fact, a very slight electron concentration minimum. To our knowledge, that paper and the paper by Tsidilkovski et al (1974) are the only ones in which the minimum of n~(T) has been registered experimentally. Figure 8 presents the ratio of hole and electron concentrations as a function of temperature for HgTe, calculated using the neutrality equation (8.1) for the following values of the parameters: eA = 2meV, N A = 5 × 1016cm -3, N D = 0 (curve 1), 5 × 10 j4 (curve 2) and 5 x 1015 cm 3 (curve 3).…”

Section: Electroneutrality Equation For Gapless Semiconductors Contaimentioning

confidence: 94%

“…To determine the electron and hole parameters n e, p,, nh, and #p separately, Tsidilkovski et al (1974) and Giriat et al (1975) combined with the expressions for a0 and R0. However, this method is applicable only provided that nh >> ne wher~ the field of inversion Hi in equation (11.1.4) is sufficiently weak so that quantum effects do not manifest themselves.…”

Section: Dependence Of the Hall Coefficient On Magnetic Field And Temmentioning

confidence: 99%

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Impurity states and electron transport in gapless semiconductors

Tsidilkovski

Harus

Shelushinina

1985

Advances in Physics

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Specific features of transport phenomena in gapless semiconductors which are due to both peculiarities of the electron spectrum of an ideal crystal and those of the impurity states in these semiconductors, are discussed. A detailed critical analysis is made of a large number of experimental papers dealing with studies of the conductivity, Hall effect, and magnetores]stance in HgCdTe crystals as a function of temperature, pressure, and magnetic field. On the strength of this analysis it is concluded that the perturbing action of the potential of acceptor-type impurities leads to effective overlap of the valence band with the conduction band. As a result, when the impurity concentration is sufficiently high, and exceeds that at which the Mott-Anderson transition occurs, the density of states of a p-type zero-gap semiconductor differs substantially from that of an ideal crystal, and is similar to that of a semimetal.

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Section: Electroneutrality Equation For Gapless Semiconductors Contaimentioning

confidence: 94%

Section: Dependence Of the Hall Coefficient On Magnetic Field And Temmentioning

confidence: 99%

Impurity states and electron transport in gapless semiconductors

Tsidilkovski

Harus

Shelushinina

1985

Advances in Physics

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“…The conduction band for HgTe is in fact non-parabolic, (Harman 1957, Tsidilkovski andGuseva 1962) and the analysis developed by Wagini (1964) and Wagini and Reiss (1966) should be employed. The deduction from magnetoresistance and magneto-Seebeck results is then that q= -1, where q is the scattering parameter for a non-parabolic band ( p q = pokq(dE/dk)2).…”

Section: Veri6 and Decamps 1965mentioning

confidence: 99%

Electrical properties of Hg₃Te₃-In₂Te₃alloys

Wright

Dahake

1968

J. Phys. D: Appl. Phys.

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Further studies have been made of single-crystal specimens of alloys of Hg3Te3 with In2Te3. Samples were annealed in Hg until extrinsic n-type properties were obtained between 77 and 250°K, and until the electron mobility was almost independent of temperature in that range. From 0-15% In2Te3 the electron mobility at 100°K was between 5000 and 20 000 cm2 v−1 s−1. However, from 37·5 to 75% it was less than 500 cm2 v−1 s−1. Evidence was obtained at several compositions that in this state the scattering parameter s was near zero, and the density of states effective mass was calculated on this assumption from the Hall and Seebeck coefficients. For the 0-15% alloys m e/m 0 was 0·03 at a carrier density of 3 × 1018 electrons/cm3; for 37·5-75% alloys m e/m 0 was 0·06 at 1017 electrons/cm3.

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Spin‐Magnetophonon Resonance in Semiconductors

Tsidilkovskii

Akselrod

Uritsky

1965

Physica Status Solidi (b)

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A theory is presented for spin‐magnetophonon resonance. The spin interaction of electrons with optical phonons is described by the introduction of vector and scalar potentials of the optical vibrational field. It is shown that the spin‐magnetophonon resonance should cause a minimum in the longitudinal magnetoresistance. The experimental data for n‐InSb and n‐InAs are discussed on the basis of this theory. Certain new magnetoresistance measurements are presented for the case of n‐InSb: 1) A maximum of the transverse magnetoresistance is observed at 82 kG corresponding to the spin‐magnetophonon resonance. The g‐factor for the conduction electrons, calculated from this maximum, is in good agreement with the theoretical value. 2) A minimum in the longitudinal magnetoresistance is observed at 24 kG, dur to the combined magnetophonon and spin‐magnetophonon resonance scattering.

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Longitudinal Magnetoresistance of n‐Type InAs

Cited by 5 publications

References 4 publications

Impurity states and electron transport in gapless semiconductors

Impurity states and electron transport in gapless semiconductors

Electrical properties of Hg₃Te₃-In₂Te₃alloys

Spin‐Magnetophonon Resonance in Semiconductors

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Longitudinal Magnetoresistance of n‐Type InAs

Cited by 5 publications

References 4 publications

Impurity states and electron transport in gapless semiconductors

Impurity states and electron transport in gapless semiconductors

Electrical properties of Hg3Te3-In2Te3alloys

Spin‐Magnetophonon Resonance in Semiconductors

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Product

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Electrical properties of Hg₃Te₃-In₂Te₃alloys