K43In an earlier paper (1) we presented the results of our measurements of the shift of the plasma minimum with uniaxial stress in InSb. We also analysed the results using the energy band structure of deformed InSb as derived by Bir and Pikus (2) and obtained the value of the deformation potential and of the band structure parameters a, R, and S. Unfortunately, due to a numerical error the values of a, R, and S were not reported accurately. In fact, they should have read -87, -0.22, and +8.7 eV, respectively. Since the time of publication of (l), we have made additional measurements of the shift of the plasma minimum with stress in n-type InSb (carrier concentration 1 . 4~1 0~~ ~m -~) .We also added the case of stress along the [llOI axis and reflection at the (100) plane. The results are in general agreement with those obtained previously. Combining all of the measurements we find a value of -41 eV for the deformation potential and a = -87 eV, R = -0.20 eV and S = +4.2 eV. The numerical data quoted above were obtained assuming the effective mass energy gap E to be 0.20 eV at room temperature. One can however follow the argument of Ehrenreich (3) and Brooks (4) and relate the rate of change of the effective mass energy gap with temperature with the deformation potential C and establish the relation g Eg(T) = Eg(O OK) t. 3 d CT , -6 o -1where d is the coefficient of linear expansion (4.7xlO K (5)). Assuming E (0 OK) =O. 23 evandusingthe' expressions obtained in (l), one can determine a self-consistent value for the deformation potential. Following this procedure we obtain C = -25 eV. This value corresponds to ( a E /aP), = 5.4~10 1) Present address: