Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate

Chriqui, Y.; Saint-Girons, Guillaume; Isella, Giovanni; Kaenel, H. von; Bouchoule, S.; Sagnes, I.

doi:10.1016/j.optmat.2004.08.022

Cited by 11 publications

(10 citation statements)

References 7 publications

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“…Nevertheless, as we have shown, this GaAs on (001)Si growth technique necessarily leads to the creation of twin pairs. This is due to the polar nature of GaAs materials and to the related asymetry between the directions 1 2 3 4 5 6 7 8 9 10 and [110] which perturbates the ELTOn growth on (001)Si substrate. One way to overcome this problem is to achieve growth on a surface free of this kind of asymetry, such as the (111) surface.…”

Section: Resultsmentioning

confidence: 99%

“…Alternative GaAs-on-Si substrates have a considerable market potential for replacing the costly GaAs substrate in producing traditional GaAs-based devices such as solar cells, photodetectors, LEDS, lasers, and microwave devices, and as a new technology for monolithic integration of GaAs elements and Si integrated circuits 1 2 3 4 5 6 7 . The first step toward this goal is to obtain high quality GaAs layer on a Si substrate, creating so-called virtual substrates.…”

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confidence: 99%

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High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed

Renard

Molière

Cherkashin

et al. 2016

Sci Rep

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Interest in the heteroepitaxy of GaAs on Si has never failed in the last years due to the potential for monolithic integration of GaAs-based devices with Si integrated circuits. But in spite of this effort, devices fabricated from them still use homo-epitaxy only. Here we present an epitaxial technique based on the epitaxial lateral overgrowth of micrometer scale GaAs crystals on a thin SiO2 layer from nanoscale Si seeds. This method permits the integration of high quality and defect-free crystalline GaAs on Si substrate and provides active GaAs/Si heterojunctions with efficient carrier transport through the thin SiO2 layer. The nucleation from small width openings avoids the emission of misfit dislocations and the formation of antiphase domains. With this method, we have experimentally demonstrated for the first time a monolithically integrated GaAs/Si diode with high current densities of 10 kA.cm−2 for a forward bias of 3.7 V. This epitaxial technique paves the way to hybrid III–V/Si devices that are free from lattice-matching restrictions, and where silicon not only behaves as a substrate but also as an active medium.

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed

Renard

Molière

Cherkashin

et al. 2016

Sci Rep

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“…Such high structural parameters of GaAs/Ge/GeSi/Si platform enabled to fabricate a number of devices working on the minority carriers: solar cells, LEDs and injection lasers. By the present, all the basic device types earlier implemented in GaAs/GaAs and GaAs/Ge heterostructures have also been fabricated with GaAs/GeSi/Si: solar cells [49][50][51][52][53], LEDs and lasers [54][55][56][57][58] (including also laser-PIN diode-like optical connections [59]), transistors [60]. The major contribution to this trend belongs to a group of Massachusetts Technological Institute headed by Fitzgerald [49-52, 54, 55, 57-60].…”

Section: Gaas-on-si Growth Through Buffer Layersmentioning

confidence: 99%

“…Chriqui et al [56] 2003; Groenert et al [54] 2003; Kwon et al, [57] 2005; Chriqui et al [58] 2005; Chilukuri et al [117] 2007; Bhattacharya et al [118,119] trons and copper wires. Investigations in this direction are scope of activity of Si photonics.…”

Section: Lasers and Ledsmentioning

confidence: 99%

III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects

Bolkhovityanov¹,

Pchelyakov²

2009

TONANOJ

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While silicon and gallium arsenide are dominant materials in modern micro-and nanoelectronics, devices fabricated from them still use Si and GaAs substrates only separately. Integrating these materials on the large and cheep Si substrate has been the subject of enormous research efforts for the past three decades. This review attempts to systematize and generalize the current understanding of the fundamental physical mechanisms governing the epitaxial growth of GaAs and related III-V compounds on Si substrates. Different kinds of bonding as a very promising non-epitaxial method for III-V thin film integration on Si substrate are reviewed. Basic techniques available for improving the quality of such heterostructures are described, and recent advances in fabricating of device-quality III-V-on-Si heterostructures and corresponding devices are also presented.

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“…Many applications are expected such as photodetectors, optical interconnections, and lasers in innovative optoelectronic integrated circuits (OEICs), in high mobility channel transistors, and in multijunction solar cells. [1][2][3][4][5][6][7] However, three major intrinsic problems have to be overcome: the lattice parameter mismatch (about 4%) generating a high density of threading dislocations, the polar or non polar nature of, respectively, GaAs or Si, and the difference of thermal expansion coefficient, which is at the origin of cracks for thick GaAs layers. 8 Several approaches to these problems have been investigated to date, but until now, no one succeeded in achieving the defect-free and cost-effective integration of 2D continuous GaAs layers.…”

Section: Introductionmentioning

confidence: 99%

GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium

Molière

Jaffré

Alvarez

et al. 2017

Journal of Applied Physics

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International audienceThe monolithic integration of III-V semiconductors on silicon and particularly of GaAs has aroused great interest since the 1980s. Potential applications are legion, ranging from photovoltaics to high mobility channel transistors. By using a novel integration method, we have shown that it is possible to achieve heteroepitaxial integration of GaAs crystals (typical size 1 lm) on silicon without any structural defect such as antiphase domains, dislocations, or stress, usually reported for direct GaAs heteroepitaxy on silicon. However, concerning their electronic properties, conventional free carrier characterization methods are impractical due to the micrometric size of GaAs crystals. In order to evaluate the GaAs material quality for optoelectronic applications, a series of indirect analyses such as atom probe tomography, Raman spectroscopy, and micro-photoluminescence as a function of temperature were performed. These revealed a high content of partially electrically active carbon originating from the trimethylgallium used as the Ga precursor. Nevertheless, the very good homogeneity observed by this doping mechanism and the attractive properties of carbon as a dopant once controlled to a sufficient degree are a promising route to device doping

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Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate

Cited by 11 publications

References 7 publications

High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed

High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed

III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects

GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium

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