Long-wavelength injection lasers based on Pb1–x Sn x Se alloys and their use in solid-state spectroscopy

Maremyanin, K. V.; Иконников, А. В.; Антонов, А. В.; Rumyantsev, V. V.; Morozov, S. V.; Bovkun, L. S.; Umbetalieva, K. R.; Chizhevskiy, E. G.; Zasavitskiy, I. I.; Гавриленко, В. И.

doi:10.1134/s1063782615120118

Cited by 17 publications

(5 citation statements)

References 4 publications

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“…Being recalculated to the equivalent threshold current for illustrative purposes, the threshold lies in the range of 10-100 A cm −2 . Such threshold current is comparable with those of the lead salt lasers operating at the same temperature and emission wavelength [23] and the threshold current of InAs-based interband QCL emitting near 10.4 µm at 80 K [24]. It should also be mentioned that the threshold values from [11] correspond to a single-pass amplification, and therefore can be lowered by forming the optical cavity.…”

supporting

confidence: 74%

Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications

Aleshkin

Dubinov

Rumyantsev

et al. 2018

J. Phys.: Condens. Matter

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Recent progress in the molecular beam epitaxy (MBE) of CdHgTe/HgTe quantum well (QW) heterostructures paves the way to a new generation of photodetectors, light-emitting diodes and lasers [1,2]. A remarkable feature of such structures is the ability to suppress the Auger recombination in narrow (<10 nm) QWs in contrast to bulk-like wells [3]. In conjunction with a variable bandgap (from 0 to 1.5 eV), this feature allows developing long-wavelength lasers on interband transitions. Such lasers could be of use in 3.5-4.5 µm and 8-13.5 µm wavelength bands, corresponding to the atmospheric transparency windows, as well as in 25-50 µm range, where no quantum cascade lasers (QCLs) are available as yet. Coherent radiation from a HgCdTe (MCT) bulk alloy was first obtained in 1966 [4], 4 years after the very first semiconductor laser had appeared [5]. Interest in stimulated emission (SE) from MCT was revived in the 1990s [6,7], when the MCT growth technology was developing rapidly for the mid-infrared (IR) detectors [8]. However, this interest faded quickly, most likely due to the fast progress of mid-IR QCLs, happening about the same time. By 2015, the longest wavelength of coherent radiation obtained from MCT was 5.3 µm [6]. In recent years, some progress has been made as far as coherent radiation from MCT material is concerned [9][10][11]: in particular, SE up to ~20 µm has been demonstrated in [9]. The possibility of optical gain in HgCdTe QWs in 20-60 µm range has been already theoretically predicted [12]. However, for the development of lasers and photodetectors, scrutiny of carrier recombination is of paramount importance. CdHgTe/HgTe QW structures were poorly studied in this respect, especially as far as narrow-gap QWs are

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supporting

confidence: 74%

Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications

Aleshkin

Dubinov

Rumyantsev

et al. 2018

J. Phys.: Condens. Matter

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“…Triangles and squares: threshold currents of existing quantum cascade lasers and interband cascade lasers at 300 K (red) or 77 K (blue) (refs – , ordered by increasing wavelength). Circles: threshold currents of Pb 1– x Sn x Se diffusion diode lasers and Pb 1– x Sn x Se 1– y Te y double heterostructure diode lasers . Reststrahlen bands of HgCdTe and GaAs are colored red and green.…”

Section: Resultsmentioning

confidence: 99%

Fundamental Limits to Far-Infrared Lasing in Auger-Suppressed HgCdTe Quantum Wells

et al. 2019

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A challenge of bridging the terahertz gap with semiconductor lasers faces an inevitable problem of enhanced non-radiative Auger recombination with reduction of photon energy. We show that this problem can be mitigated in mercury-cadmium-telluride quantum wells (HgCdTe QWs) wherein the Auger process is suppressed due to formation of quasi-relativistic electron-hole dispersion imposing strong energy-momentum restrictions on recombining carriers. Such dispersion is formed upon interaction of topological states at the two QW interfaces. We characterize the lasing properties of HgCdTe QWs quantitatively by constructing a microscopic theory for recombination, absorption, and gain, and show the feasibility of lasing down to ∼ 50 µm at liquid nitrogen temperature with threshold currents two orders of magnitude lower than in existing lasers. Our findings comply with recent experimental data on stimulated far-infrared emission from HgCdTe QWs and show the directions toward achievement of maximum possible lasing wavelength.

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“…Also, in the frequency region of 5-12 THz, the operation of QCLs is greatly hindered by the optical phonon absorption (restrallen band) in GaAs and InP [5]. The lead salt diode lasers can be considered as alternative to QCLs as they cover the very broad frequency region (6.5 -26 THz) [9,10], but their figures of merit, in particular, output power, are limited due to growth technology problems.…”

Section: Introductionmentioning

confidence: 99%

Ultra-compact injection terahertz laser using the resonant inter-layer radiative transitions in multi-graphene-layer structure

Dubinov¹,

Bylinkin²,

Aleshkin³

et al. 2016

Opt. Express

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The optimization of laser resonators represents a crucial issue for the design of tera-hertz semiconductor lasers with high gain and low absorption loss. In this paper, we put forward and optimize the surface plasmonic metal waveguide geometry for the recently proposed tera-hertz injection laser based on resonant radiative transitions between tunnel-coupled graphene layers. We find an optimal number of active graphene layer pairs corresponding to the maximum net modal gain. The maximum gain increases with frequency and can be as large as ∼ 500 cm^-1 at 8 THz, while the threshold length of laser resonator can be as small as ∼ 50 μm. Our findings substantiate the possibility of ultra-compact voltage-tunable graphene-based lasers operating at room temperature.

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Long-wavelength injection lasers based on Pb1–x Sn x Se alloys and their use in solid-state spectroscopy

Cited by 17 publications

References 4 publications

Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications

Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications

Fundamental Limits to Far-Infrared Lasing in Auger-Suppressed HgCdTe Quantum Wells

Ultra-compact injection terahertz laser using the resonant inter-layer radiative transitions in multi-graphene-layer structure

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