Long-wave infrared generation from femtosecond and picosecond optical parametric oscillators based on orientation-patterned gallium phosphide

Maidment, Luke; Kara, Oguzhan; Schunemann, Peter G.; Piper, Jonathan; McEwan, Ken; Reid, Derryck T.

doi:10.1007/s00340-018-7001-2

Cited by 24 publications

(14 citation statements)

References 39 publications

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“…An alternative to the two-color air plasma scheme considered here would be to utilize advanced schemes of photonic down-conversion in crystals [12][13][14] . An advantage of the air plasma is that it is simple and low cost, provided the titanium:sapphire drive pulse is already available.…”

Section: Introductionmentioning

confidence: 99%

Seed source for plasma compression in the long wavelength infrared

et al. 2021

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Two color laser pulses are used to form an air plasma and generate broadband infrared radiation suitable as a seed for backward Raman amplification of CO 2 laser pulses. Broadband radiation in the atmospheric window from 8-14 microns is observed. The infrared radiation is characterized using a long wavelength grating spectrometer specially designed to accept an ionizing laser filament at its input plane. The LWIR yield is greatly enhanced by chirping the drive pulse. Unidirectional pulse propagation simulations suggest that this is due in part to the dependence of the nonlinear refractive index on the pulse duration.

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Section: Introductionmentioning

confidence: 99%

Seed source for plasma compression in the long wavelength infrared

et al. 2021

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“…As a result, generation of coherent MIR radiation [ 16 ] and frequency conversion in orientation‐patterned GaP (OP‐GaP) has been recently successfully proven. [ 17–19 ] The reproducible growth of high‐quality OP‐GaP devices, however, is severely hindered by the poor quality and limited availability of commercial GaP 3” substrates, (which have a typical etch pit density (EPD) of (8–10) × 10 4 cm −2 (vs EPD < 5×10 3 cm −2 for GaAs), as well as by the difficulty of growing smooth nonpolar Si layers on GaP by molecular‐beam epitaxy (MBE). Thus, along with the attempts to further optimize the OP‐GaP template preparation techniques and improving the quality of the growth on them, the idea to combine these two materials, GaP and GaAs, by heteroepitaxial growth of OP‐GaP on the readily available high‐quality OP‐GaAs templates arose spontaneously and led to OP‐GaP growths with excellent domain fidelity [ 20–22 ] .…”

Section: Introductionmentioning

confidence: 99%

Thick Heteroepitaxy of Binary and Ternary Semiconductor Materials for Nonlinear Frequency Conversion in the Mid and Longwave Infrared Region

Tassev

Vangala

Brinegar

et al. 2020

Physica Status Solidi (a)

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Thick hydride vapor phase heteroepitaxy of some III–V, II–VI, and III–VI binary and ternary semiconductor materials such as GaAs, GaP, GaP, GaAsxP1‐x, ZnSe, and GaSe is performed on GaAs substrates and orientation‐patterned GaAs templates. Up to 500 μm thick GaAs, GaP, GaP, GaAsxP1‐x, and ZnSe layers are deposited in single growths or after a regrowth. The GaSe layers deposited through van der Waals heteroepitaxy are up to 4–5 μm thick. When possible, growths are also performed homoepitaxially as the comparison of growth rate and layer quality indicates similar or better results in some of the heteroepitaxial cases. Material analysis using optical microscopy, scanning electron microscopy, atomic force microscopy, high‐resolution X‐ray diffraction, and energy dispersive X‐ray spectroscopy indicate smooth surface morphology, uniform layer thicknesses, high crystalline quality, and gradual substrate‐to‐layer material transition in the cases of heteroepitaxy. Respectively, the growths on the templates prepared by an optimized polarity inversion technique (assisted by molecular‐beam epitaxy) reveal excellent domain fidelity and good infrared transparency. The samples grown on templates are intended for frequency conversion devices operating in mid and longwave infrared. The layers grown on plain substrates are meant to support applications in optoelectronics, renewable energy, sensing, and solar cells.

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“…GaP has recently been proposed as a strong candidate for QPM applications, because of its high nonlinear coefficient, wide transparency range, and low two‐photon absorption at 1 μm, as well as good thermal, optical, and mechanical properties . MIR generation utilizing QPM GaP structures has recently been demonstrated, including optical parametric oscillators (OPOs) pumped with femto‐ and picosecond pulses achieving outputs of 105 and 137 mW, respectively, as well as the generation of a 4.2 μm centered frequency comb . OPOs based on orientation‐patterned (OP) GaP (OP‐GaP) QPM structures have also been reported in earlier publications .…”

Section: Introductionmentioning

confidence: 99%

Direct Heteroepitaxy of Orientation‐Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi‐Phase‐Matching Applications

Strömberg

Omanakuttan

et al. 2019

Physica Status Solidi (a)

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Heteroepitaxial growth of orientation-patterned (OP) GaP (OP-GaP) on wafer-bonded OP-GaAs templates is investigated by low-pressure hydride vapor phase epitaxy for exploiting the beneficial low two-photon absorption properties of GaP with the matured processing technologies and higher-quality substrates afforded by GaAs. -First, GaP homoepitaxial selective area growth (SAG) is conducted to investigate the dependence of GaP SAG on precursor flows and temperatures toward achieving a high vertical growth rate and equal lateral growth rate in the [110] and [110]-oriented openings. Deteriorated domain fidelity is observed in the heteroepitaxial growth of OP-GaP on OP-GaAs due to the enhanced growth rate on domain boundaries by threading dislocations generated by 3.6% lattice matching in GaP/GaAs. The dependence of dislocation dynamics on heteroepitaxial growth conditions of OP-GaP on OP-GaAs is studied. High OP-GaP domain fidelity associated with low threading dislocation density and a growth rate of 57 μm h À1 are obtained by increasing GaCl flow. The properties of heteroepitaxial GaP on semi-insulating GaAs is studied by terahertz time-domain spectroscopy in the terahertz range. The outcomes of this work will pave the way to exploit heteroepitaxial OP-GaP growth on OP-GaAs for frequency conversion by quasi-phase-matching in the mid-infrared and terahertz regions.

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Long-wave infrared generation from femtosecond and picosecond optical parametric oscillators based on orientation-patterned gallium phosphide

Cited by 24 publications

References 39 publications

Seed source for plasma compression in the long wavelength infrared

Seed source for plasma compression in the long wavelength infrared

Thick Heteroepitaxy of Binary and Ternary Semiconductor Materials for Nonlinear Frequency Conversion in the Mid and Longwave Infrared Region

Direct Heteroepitaxy of Orientation‐Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi‐Phase‐Matching Applications

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