Long-Term Stability of Aluminum Oxide Based Surface Passivation Schemes Under Illumination at Elevated Temperatures

Degradation of Surface Passivation on Crystalline Silicon and Its Impact on Light-Induced Degradation Experiments

“…Since only three samples with different base material have been investigated here, more experiments are necessary to verify if the observed degradation in surface quality is linked to the substrate doping. A similar but much slower surface-related degradation was observed in samples passivated with AlO x :H/SiN x :H. Niewelt et al have reported on samples which show only a slight degradation of this passivation layer stack under similar treatment conditions [31]. This shows that AlO x :H/SiN x :H passivated samples can be, in principle, rather stable.…”

Superacid-Treated Silicon Surfaces: Extending the Limit of Carrier Lifetime for Photovoltaic Applications

“…4(a) plots τ bulk which is considerably higher than the modeled intrinsic limit for the same doping concentration [5]. In contrast, the effective lifetime of the Al 2 O 3 passivated sample also exceeds the intrinsic limit, which has also been observed by other groups [39], [40], thereby implying the true bulk lifetime is indeed higher than that given by the current parameterization. In light of this discovery, a re-evaluation of the intrinsic recombination (radiative and Auger) should be performed.…”

Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon

“…A discussion of the achieved s eff on the sample set in terms of surface passivation quality can be found in Ref. 10. In some of the samples, degradation of the measured effective lifetime upon light soaking at elevated temperature was observed.…”

“…For a more detailed study on the achieved passivation qualities on all investigated samples and their long-term stability to light-soaking at elevated temperatures, we refer to upcoming publications of the authors. 10,11 …”