Long-term reliability of Ti–Pt–Au metallization system for Schottky contact and first-level metallization on SiC MESFET

Fabrication, packaging, and characterization of p-SOI Wheatstone bridges for harsh environments

“…The subsequent increase of resistance is due to interdiffusion and formation of intermetallic compounds. A diffusion-controlled model was proposed relating the change of resistance to such interdiffusion phenomena (Sozza et al 2004). For the failure time versus temperature, Arrhenius dependence can be expected, which was confirmed in our experiments (see Fig.…”

“…An increase of the determined resistance upon annealing can thus be assigned to interdiffusion between gold and the other metals or the formation of intermetallic phases leading to a much higher specific resistance. The failure criterion of the metal contact is fulfilled, when the specific resistance is 10% higher than the initial value (Sozza et al 2004). The following relationship between the specific resistance and the annealing time was found in Hagel (2004).…”

Kinetic study of interfacial solid state reactions in the Ni/4H–SiC contact

“…Many transition metals and metal combinations, such as Al, Fe, Cr, Ti, Co, Pt, Ni, Ti/Al, Ta/Pt, Ti/Pt/Au, Ta/Ni/Ta and Ti/Ni/Ti/Au, have been studied to form excellent contacts to n-or p-type SiC [2,3,[5][6][7][8][9][10][11][12][13]. Most of work is mainly focused on the interface reactions between different metals and SiC from a view point of material science [3][4][5][6][7][8][9][10][11][12]. It is well known that there are two kinds of the chemical reaction pathways between SiC and metals, of which silicides and free carbon, silicides and carbides or ternary phases are produced respectively [6].…”

Thermodynamic assessment of the Pt–Ti system

“…Ti-Pt metallizations are commonly used as ohmic contacts to InGaAs [1][2][3][4] and Schottky contacts to SiC [5]. Interfacial reactions between Ti/Pt metallizations and semiconductor compounds are of interest, because of the technological importance for successful semiconductor device applications under extreme conditions [5].…”

“…Interfacial reactions between Ti/Pt metallizations and semiconductor compounds are of interest, because of the technological importance for successful semiconductor device applications under extreme conditions [5]. For better understanding the physical properties, the chemical behavior and the technological applications of its alloys and compounds, it is necessary to have a better knowledge of the thermodynamic properties of this relevant alloy system.…”