Long-term and instantaneous burnout in GaAs power FET's: Mechanisms and solutions

Wemple, S. H.; Niehous, W.C.; Fukui, H.; Irvin, J.C.; Cox, H. M.; Hwang, J.C.M.; DiLorenzo, J.V.; Schlosser, W.O.

doi:10.1109/t-ed.1981.20439

Cited by 67 publications

(22 citation statements)

References 6 publications

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“…In the general case, nonuniform structure does not need an "excitation" event 69 agreement with both the experimental (Fig. 3.7) and the analytical (3.13) results.…”

Section: Local Defect and Inhomogeneity Impactsupporting

confidence: 84%

“…However, under certain conditions (particularly at high R T ) thermal breakdown can occur too [69][70][71][72] due to high overheating in on-state operation. In power transistors with good thermal resistance, the thermal generation of electron-hole pairs is low.…”

Section: Thermal Breakdown In Gaas Mesfetsmentioning

confidence: 99%

“…Therefore, as usual mostly failures of electrical nature are experimentally observed. Simple estimation demonstrates [69] that the semi-insulating substrate plays a major role at thermal breakdown in MESFETs. Measurements of safe operation area demonstrate that the critical power of MESFETs in the DC regime is preserved in some current and voltage range.…”

Section: Thermal Breakdown In Gaas Mesfetsmentioning

confidence: 99%

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Physical Limitations of Semiconductor Devices

Ващенко¹,

Sinkevitch²

2008

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“…In the general case, nonuniform structure does not need an "excitation" event 69 agreement with both the experimental (Fig. 3.7) and the analytical (3.13) results.…”

Section: Local Defect and Inhomogeneity Impactsupporting

confidence: 84%

Section: Thermal Breakdown In Gaas Mesfetsmentioning

confidence: 99%

Section: Thermal Breakdown In Gaas Mesfetsmentioning

confidence: 99%

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Physical Limitations of Semiconductor Devices

Ващенко¹,

Sinkevitch²

2008

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“…The device has met with limited success as a power device, largely due to irreproducible high gate-drain breakdown voltages [1] and "power slump" phenomena [2]. Both of these effects have been attributed to the presence of surface states [2,3] which change the potential between gate-drain and gate-source electrodes. Although a variety of wet and gas-phase passivation treatments have been proposed and demonstrated, the results of such treatments have generally been short-lived and difficult to reproduce [4,5].…”

Section: Introductionmentioning

confidence: 99%

“…antisite defects, with characteristic energies situated mid-bandgap. The antisite defects are likely to be responsible for the degradation of pHEMT devices [3]. Since the hydrogen should desorb from the material with the excess As, effective passivation should not require that the hydrogen remains 401 Mat.…”

Section: Introductionmentioning

confidence: 99%

Surface Passivation of Gaas-Based Phemt by Hydrogen Ion Irradiation

Shi

Chang

et al. 1996

MRS Proc.

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Surface passivation is a key issue in compound semiconductor device technology. The high density of surface states on unpassivated surfaces can lead to excessive non-radiative recombination at the surface, affecting optical devices, or provide leakage and low-field breakdown in electronic devices. Our previous studies on low energy, low-dose hydrogen ion treatment carried out at room temperature showed long-term improvement in the optical properties of near surface quantum wells. We have accordingly applied this process to GaAs-based pseudomorphic HEMTs (PHEMT) in order to improve their power performance. Although our process is designed so that the hydrogen reactions are confined to the surface of the substrate, a critical factor in the success of this treatment is the extent of in-diffusion of the hydrogen, and the possibility of dopant passivation. PHEMT structures were hydrogenated at various conditions and both Hall mobility and carrier density were monitored. For a low hydrogen ion dose (3 xl016 cm2 ) at 80 eV energy, some degradation of Hall mobility and carrier density was noted after the treatment, but full recovery of both parameters was achieved after a 400'C thermal anneal. Much higher hydrogen doses resulted in severe degradation of mobility and carrier density, which were only partially recovered after thermal anneal. Measurements on actual PHEMT devices showed an approximately 15% decrease in the transconductance, and in addition, a 60% decrease in the gate- 16-2to-drain leakage current after irradiation with 80 eV hydrogen ions at a dose of 3 xlO cm . The decrease of the leakage current indicates that passivation is taking place. The decrease of the transconductance suggests that hydrogen may be diffusing into the regions of the dopants. Optimization of the hydrogenation parameters should allow leakage reduction without sacrifice of transconductance.

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Insulating Materials

Barron¹

1996

CVD of Nonmetals

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Long-term and instantaneous burnout in GaAs power FET's: Mechanisms and solutions

Cited by 67 publications

References 6 publications

Physical Limitations of Semiconductor Devices

Physical Limitations of Semiconductor Devices

Surface Passivation of Gaas-Based Phemt by Hydrogen Ion Irradiation

Insulating Materials

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