Long Spin Diffusion Length in Few-Layer Graphene Flakes

Wu, Yan; Phillips, L. C.; Barbone, Matteo; Hämäläinen, Sampo J.; Lombardo, Antonio; Ghidini, M.; Moya, Xavier; Maccherozzi, Francesco; Dijken, Sebastiaan van; Dhesi, S. S.; Ferrari, Andrea C.; Mathur, N. D.

doi:10.1103/physrevlett.117.147201

Cited by 45 publications

(37 citation statements)

References 47 publications

(85 reference statements)

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“…These millimetre-scale spin diffusion lengths are 1-2 orders of magnitude longer than predictions for intrinsic SLG 3,4 and 1-3 orders of magnitude above existing experimental values. [7][8][9][10][11][12][13]51 Moreover, l sf would be even larger if we took into account the unequal electrode areas, and the possibility of imperfect switching. 30 Therefore, unrealistically large improvements in l sf would be required to explain the magnitude of our MR peaks in terms of spin transport.…”

Section: à2mentioning

confidence: 99%

Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces

Phillips

Lombardo

Ghidini

et al. 2016

Applied Physics Letters

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Using ferromagnetic La0.67Sr0.33MnO3 electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ∼32–35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La0.67Sr0.33MnO3-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications.

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Section: à2mentioning

confidence: 99%

Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces

Phillips

Lombardo

Ghidini

et al. 2016

Applied Physics Letters

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“…In particular, graphene has been proved to be ideal for long-distance spin transport (in excess of several micrometres)101112131415. However, owing to its weak SOC, spin manipulation in this material has been mainly achieved by an external magnetic field through Hanle precession101314.…”

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confidence: 99%

A two-dimensional spin field-effect switch

et al. 2016

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Future development in spintronic devices will require an advanced control of spin currents, for example by an electric field. Here we demonstrate an approach that differs from previous proposals such as the Datta and Das modulator, and that is based on a van de Waals heterostructure of atomically thin graphene and semiconducting MoS2. Our device combines the superior spin transport properties of graphene with the strong spin–orbit coupling of MoS2 and allows switching of the spin current in the graphene channel between ON and OFF states by tuning the spin absorption into the MoS2 with a gate electrode. Our proposal holds potential for technologically relevant applications such as search engines or pattern recognition circuits, and opens possibilities towards electrical injection of spins into transition metal dichalcogenides and alike materials.

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“…Presumably, the discrepancy originated from the CVD graphene and the exfoliated graphene. On the other hand, utilizing highly polarized LSMO electrons, Yan et al reported a spin valve with a few-layer graphene flake bridging electrodes that had a long spin diffusion length at low temperature [ 149 ].…”

Section: Spin Transport In 2d Materialsmentioning

confidence: 99%

Spintronics in Two-Dimensional Materials

et al. 2020

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HIGHLIGHTS • The recent progress of spin injection, spin transport, spin manipulation, and application in 2D materials was summarized. • The current challenges and outlook of future studies in spintronics based on 2D materials and related heterostructures were discussed. ABSTRACT Spintronics, exploiting the spin degree of electrons as the information vector, is an attractive field for implementing the beyond Complemetary metal-oxide-semiconductor (CMOS) devices. Recently, two-dimensional (2D) materials have been drawing tremendous attention in spintronics owing to their distinctive spin-dependent properties, such as the ultra-long spin relaxation time of graphene and the spin-valley locking of transition metal dichalcogenides. Moreover, the related heterostructures provide an unprecedented probability of combining the different characteristics via proximity effect, which could remedy the limitation of individual 2D materials. Hence, the proximity engineering has been growing extremely fast and has made significant achievements in the spin injection and manipulation. Nevertheless, there are still challenges toward practical application; for example, the mechanism of spin relaxation in 2D materials is unclear, and the high-efficiency spin gating is not yet achieved. In this review, we focus on 2D materials and related heterostructures to systematically summarize the progress of the spin injection, transport, manipulation, and application for information storage and processing. We also highlight the current challenges and future perspectives on the studies of spintronic devices based on 2D materials.

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Long Spin Diffusion Length in Few-Layer Graphene Flakes

Cited by 45 publications

References 47 publications

Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces

Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces

A two-dimensional spin field-effect switch

Spintronics in Two-Dimensional Materials

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