Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate

Sharma, Yogesh; Agarwal, Radhe; Phatak, Charudatta; Kim, Bumsoo; Jeon, Seokwoo; Katiyar, Ram S.; Hong, Seungbum

doi:10.1038/s41598-017-05055-z

Cited by 23 publications

(19 citation statements)

References 32 publications

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“…In VPFM they likely arise due to cross‐talk (cantilever buckling) from small 〈110〉 monoclinic distortions . Similar features have been observed by lateral PFM to form flux closure states in a comparable mixed phase BFO system and could be fully resolved by vector/angle resolved PFM . These are distinct from the crystallographic terraces of the T‐phase that can be seen as the pale striations in the height images (Figure a,b) which are roughly aligned along the horizontal axes of the images that run along the degenerate in‐plane 〈100〉 c directions.…”

Section: Resultssupporting

confidence: 56%

Revealing the Interplay of Structural Phase Transitions and Ferroelectric Switching in Mixed Phase BiFeO₃

Naden

Edwards

Neumayer

et al. 2018

Adv Materials Inter

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the R3c space group [6] with polarization along the 〈111〉 c pseudocubic directions. [7] When grown on substrates with large inplane compressive strain (≈<-4.5%), [8] very thin BFO films can adopt a monoclinic unit cell that is approximately tetragonal (T) [8] with polarization along the 〈001〉 c pseudocubic axes. For thicknesses above ≈60 nm, the T-like phase becomes less favorable and there is a relaxation of the unit cell toward a more rhombohedral configuration. [8] This results in a mixed crystallographic phase microstructure, with alternating T-and R-like regions, as revealed by X-ray diffraction [9,10] and scanning transmission electron microscopy (STEM). [10] The strain-driven phase competition gives rise to an effective morphotropic phase boundary (MPB), similar to those commonly observed in solid solutions such as PbZr x Ti 1−x O 3 . In MPB materials, the different structural phases are separated by small energetic barriers, making them susceptible to phase transitions when subjected to external stimuli such as temperature, [11] electric field, [2] and mechanical stress. [12,13] Intriguingly, it is possible to deterministically and reversibly alter the phase population in BFO by application of electric field and nanoscale stress, [2,9,[14][15][16][17][18] thereby opening up a new route to further tune the hysteretic response during switching. However, challenges still remain in understanding the precise nature of the interplay of structural transitions and stress-mediated ferroelectric switching and the overall effect of this meshing of phenomena on the functional properties of the film. Such understanding could be pivotal to the development of future technological applications, such as pressure-sensors, photoresistive, [19] or magnetoelectronic devices, [1] exploiting the enhanced properties that can accompany the mixed phase microstructure and its tuning through different stimuli.Detailed studies of the effects of electric field on mixed phase BFO have previously been performed using scanning probe microscopy, revealing both R → T and T → R phase transitions. [2,3,9] The advent of band excitation piezoresponse force spectroscopy (BEPS) [20] has enabled the collection of nanoscale piezoelectric hysteresis loops [20] and detailed study of the accompanying phase transitions. [21,22] While electric field is relatively simple to exert on the nanoscale via an atomic force microscope (AFM) tip, it has been challenging to achieve controlled stress-induced phase transitions in a typical AFM setup.Epitaxially strained BiFeO 3 thin films with coexisting tetragonal-and rhombohedral-like phases exhibit a range of intriguing functional properties, often strongly related to the unique microstructure of the film. Here enhancements in electromechanical response are reported during simultaneous nanoscale application of electric field and localized stress. These enhancements manifest in the form of peaks, or humps, in the piezoresponse hysteresis loops obtained under a select polarity of applied electric field, correspond...

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Section: Resultssupporting

confidence: 56%

Revealing the Interplay of Structural Phase Transitions and Ferroelectric Switching in Mixed Phase BiFeO₃

Naden

Edwards

Neumayer

et al. 2018

Adv Materials Inter

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“…However, if a very small gate could be moved step‐by‐step across the FE layer, it would be possible to generate very exact switched geometries across very large areas one step at a time, as in scanning probe experiments. This local approach to global switching works well but is not practical for device applications . Still, the concept of localizing biasing as a means of inducing FE switching is important, but the problem of how to bridge this to easy macroscopic application remains.…”

Section: Introductionmentioning

confidence: 99%

Ionic Gating of Ultrathin and Leaky Ferroelectrics

Sharma

Wong

Herklotz

et al. 2019

Adv Materials Inter

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18 O environment. a) The variation of Ti + and Sr + ion concentrations with sputter time show PZT layer boundary (yellow) with LSMO back gate layer (grey). b) Depth profile of the 16 O and 18 O ion concentrations. c) The ratio (%) of 18 O concentration across the PZT layer shows that the 18 O ratio increases above the natural abundance up to around 4 nm deep in the PZT layer signaling the presence of oxygen cycling during switching cycles.www.advancedsciencenews.com

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“…The in-plane PFM phase response [ Fig. 3(b)] of the same area shows the presence of micron-long striped domains 47 oriented along the 110 direction, with a period deduced from the FFT of this image [inset of Fig. 3(b)] of ∼80 nm.…”

confidence: 99%

Structural, magnetic, and ferroelectric properties of T-like cobalt-doped BiFeO3 thin films

et al. 2018

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We present a comprehensive study of the physical properties of epitaxial cobalt-doped BiFeO3 films ∼50 nm thick grown on (001) LaAlO3 substrates. X-ray diffraction and magnetic characterization demonstrate high quality purely tetragonal-like (T′) phase films with no parasitic impurities. Remarkably, the step-and-terrace film surface morphology can be fully recovered following a local electric-field-induced rhombohedral-like to T′ phase transformation. Local switching spectroscopy experiments confirm the ferroelectric switching to follow previously reported transition pathways. Critically, we show unequivocal evidence for conduction at domain walls between polarization variants in T′-like BFO, making this material system an attractive candidate for domain wall-based nanoelectronics.

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Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate

Cited by 23 publications

References 32 publications

Revealing the Interplay of Structural Phase Transitions and Ferroelectric Switching in Mixed Phase BiFeO₃

Revealing the Interplay of Structural Phase Transitions and Ferroelectric Switching in Mixed Phase BiFeO₃

Ionic Gating of Ultrathin and Leaky Ferroelectrics

Structural, magnetic, and ferroelectric properties of T-like cobalt-doped BiFeO3 thin films

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Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate

Cited by 23 publications

References 32 publications

Revealing the Interplay of Structural Phase Transitions and Ferroelectric Switching in Mixed Phase BiFeO3

Revealing the Interplay of Structural Phase Transitions and Ferroelectric Switching in Mixed Phase BiFeO3

Ionic Gating of Ultrathin and Leaky Ferroelectrics

Structural, magnetic, and ferroelectric properties of T-like cobalt-doped BiFeO3 thin films

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Product

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Revealing the Interplay of Structural Phase Transitions and Ferroelectric Switching in Mixed Phase BiFeO₃

Revealing the Interplay of Structural Phase Transitions and Ferroelectric Switching in Mixed Phase BiFeO₃