Long-Range Phase Coherence in Double-Barrier Magnetic Tunnel Junctions with a Large Thick Metallic Quantum Well

Abstract

Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2 nm) under which electron phase coherence is conserved. In the present study we show evidence of QW resonance states in Fe QW up to12 nmthick and at room temperature in fully epitaxial doubleMgAlO x barrier magnetic tunnel junctions. The electron phase coherence displayed in this QWis of unprecedented quality because ofa homogenous interface phase shift due to the small lattice mismatch at the Fe/MgAlO x interface. The physical understanding of the critical role of interface strain on QW phase coherence will greatly promote the development of the spin-dependent quantum resonant tunneling applications.

Tunable tunneling magnetoresistance in in-plane double barrier magnetic tunnel junctions based on B vacancy h-NB nanoribbons

“…33 Multifunctional lateral transition-metal disulfides heterojunctions have also been reported. 34 In addition, despite the double barrier MTJs having a great potential application in spintronic devices and attracting a lot of research interest, 35–37 there are no reports about in-plane double barrier MTJs (IDB–MTJs) as far as we know. In this work, we want to explore the transport properties of IDB–MT based on 2D magnetic materials.…”

Coherent Resonant Tunneling through Double Metallic Quantum Well States

“…In our previous work, 25 by using MgAlOx as barrier [26][27][28][29] to form the QW, we demonstrated the long-range phase coherence in thick Fe QW up to 12 nm, which was attributed to the minimizing of interfacial strain at the Fe/MgAlOx interface due to the small lattice mismatch between Fe and MgAlOx. 30,31 In this work, by taking advantage of the long-range phase coherence in Fe/MgAlOx QW structure, we have successfully fabricated fully epitaxial double-QW MTJs with three MgAlOx tunnel barriers.…”

Temperature dependence of shot noise in double barrier magnetic tunnel junctions

“…MTJs based on symmetrypreserved tunneling have been used for read heads of hard disk drives and data storage such as STT-MRAM 10 . Double barrier magnetic tunnel junctions(DBMTJs) have potential advantages over single barrier magnetic tunnel junctions(SBMTJs) due to their better signal to noise ratio [11][12][13][14][15] . DBMTJ can generate a larger output voltage at the relevant operating voltage, which can improve the signal to noise ratio 16,17 .…”