2015
DOI: 10.1103/physrevlett.115.218701
|View full text |Cite
|
Sign up to set email alerts
|

Long Lifetime Hole Traps at Grain Boundaries in CdTe Thin-Film Photovoltaics

Abstract: The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
18
0

Year Published

2016
2016
2021
2021

Publication Types

Select...
5
1

Relationship

1
5

Authors

Journals

citations
Cited by 19 publications
(19 citation statements)
references
References 27 publications
(42 reference statements)
0
18
0
Order By: Relevance
“…6b, have higher intensity than the neighbouring grain interiors. A higher grain boundary intensity is unexpected, since these are typically regions of stronger non-radiative recombination [29]. However, Fig.…”
Section: Bg Mendis Et Al Solar Energy Materials and Solar Cells 17mentioning
confidence: 91%
“…6b, have higher intensity than the neighbouring grain interiors. A higher grain boundary intensity is unexpected, since these are typically regions of stronger non-radiative recombination [29]. However, Fig.…”
Section: Bg Mendis Et Al Solar Energy Materials and Solar Cells 17mentioning
confidence: 91%
“…Substitutional acceptor impurities have a negative charge and can localize positrons at low temperatures, but there is no associated open volume so their annihilation characteristics are similar to perfect lattice positron states. Other experimental methods commonly observe a shallow acceptor in CdTe which has been attributed to oxygen, 17,18 including the substitutional center O Te . 19 The vacancy defect lifetime and the calculated bulk lifetime, s B , values obtained here are in agreement with earlier studies of CdTe and Cd 1Àx Zn x Te.…”
mentioning
confidence: 99%
“…This is however not to be confused with the well-known behaviour of CdTe at low temperature (i.e. liquid nitrogen/helium cooled), where enhanced donor acceptor pair recombination is observed at the grain boundaries [10,[33][34]. P o is the power lost to backscattered electrons and nonradiative recombination at a free surface and/or grain boundary.…”
Section: Sem-cl Resultsmentioning
confidence: 85%
“…5b. The room temperature SEM-CL [10] and photoluminescence [32] spectrum for CdTe consists of a peak at ~820 nm wavelength as well as a high energy tail extending to ~760 nm wavelength. This is evident in Fig.…”
Section: Tem-cl Resultsmentioning
confidence: 99%
See 1 more Smart Citation